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| Infrared Emitting Diodes(GaAlAs) K DNH OESI AL-402 DIMENSIONS The AL-402 is a high-power GaAlAs IRED, with precision optical designed attachment lens. It emits parallel infrared lights. (Unit : mm) FEATURES UParallel rays ULow profile Usidelooking plastic package APPLICATIONS U ncoders E UEmitters for automatic focusing MAXIMUM RATINGS Item Reverse voltage Forward current Pulse forward current Power dissipation Operating temp. Storage temp. *1 Soldering temp. (Ta=2...) 5 Symbol VR F I F IP PD Topr. Tstg. Tsol. Rating 5 100 0.3 150 -25~+70 -30~+80 240 Unit V mA A mW ... ... ... *1. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle Effective emitting diameter (Ta=2...) 5 Symbol VF R I Ct PO *Ip **I *E D Conditions F= I 50mA VR=5V f=1MHz F= I 50mA F= I 50mA F= I 50mA Min. Typ. 1.4 20 2.2 910 50 (R)TM 9 3. Max. 2.0 10 Unit. V *I A pF mW/sr nm nm deg. mm 12 - 1- Infrared Emitting Diodes(GaAlAs) AL-402 Power dissipation Vs. Ambient temperature Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Relative intensity Vs. Wavelength Forward current Vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2- |
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