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| 5.0mm INFRARED EMITTING DIODE REV:A / 0 520E940C PACKAGE DIMENSIONS Note: 1.All Dimensions are in millimeters. 2.Tolerance is 0.25mm(0.010 ") Unless otherwise specified. 3.Protruded resin under flange is 1.5mm(0.059 ") max. 4.Lead spacing is measured where the leads emerge from the package. 5.Specification are subject to change without notice DRAWING NO. : DS-23-02-0005 DATE : 2002-02-28 Page : 1 QR0202-10B 5.0mm INFRARED 520E940C EMITTING DIODE REV:A / 0 FEATURES * EXTRA HIGH RADIANT POWER AND RADIANT INBTENSITY * LOW FORWARD VOLTAGE * SUITABLE FOR HIGH PULSE CURRENT OPERATIONTENSITY *HIGH RELIABILITY CHIP MATERIALS * Dice Material : GaA1As/GaAs * Lens Color : WATER CLEAR ABSOLUTE MAXIMUM RATING : ( Ta = 25C ) SYMBOL PD VR IF Topr Tstg Power Dissipation Reverse Voltage Average Forward Current Operating Temperature Range Storage Temperature Range PARAMETER INFRARED 100 5 100 UNIT mW V mA -35C to 85C -35C to 85C Lead Soldering Temperature1.6mm(0.063 inch) From Body250C 5C for 3 Seconds ELECTRO-OPTICAL CHARACTERISTICS : ( Ta = 25C ) TEST CONDITION IF = 10mA IF = 50mA VR = 5V IF = 10mA IF = 10mA IF = 10mA 940 22 30 SYMBOL VF IR P 21/2 IE PARAMETER Forward Voltage Reverse Current Peak Emission Wavelength Half Intensity Angle Radiant Intensity MIN. TYP. MAX. UNIT 1.2 1.4 1.6 10 V A nm deg mw/sr DRAWING NO. : DS-23-02-0005 DATE : 2002-02-28 Page : 2 QR0202-10C 5.0mm INFRARED 520E940C EMITTING DIODE REV:A / 0 DRAWING NO. : DS-23-02-0005 DATE : 2002-02-28 Page : 3 |
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