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| 2SK3771-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR dVDS/dt dV/dt PD Tch Tstg VISO Ratings 100 70 29 116 30 29 376.4 3.7 20 5 37 2.16 +150 -55 to +150 2 Unit V V A A V A mJ mJ Remarks VGS=-30V Equivalent circuit schematic Drain(D) Gate(G) Note *1 Note *2 Note *3 Source(S) Note *1:Tch < 150C,Repetitive and Non-repetitive = Note *2:StartingTch=25C,IAS=12A,L=3.14mH, VCC=48V,RG=50 EAS limited by maximum channel temperature kV/s VDS<100V = and Avalanche current. kV/s Note *4 See to the `Avalanche Energy' graph Tc=25C W Note *3:Repetitive rating:Pulse width limited by Ta=25C maximum channel temperature. C See to the `Transient Thermal impedance' C graph. kVrms t=60sec. f=60Hz < < < Note *4:IF = -ID, -di/dt = 50A/s,VCC= BVDSS,Tch=150C Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Symbol Rth(ch-c) Rth(ch-a) Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=100V VGS=0V Tch=25C Tch=125C VDS=80V VGS=0V VGS=30V VDS=0V ID=14.5A VGS=10V ID=14.5A VDS=75V VGS=0V f=1MH VCC=48V ID=14.5A VGS=10V RGS=10 VCC=50V ID=29A VGS=10V IF=29A VGS=0V Tch=25C IF=29A VGS=0V -di/dt=100A/s Tch=25C Test Conditions channel to case channel to ambient VDS=25V Min. 100 3.0 Typ. Max. 5.0 25 250 100 59 1100 300 22 19 9 30 12 35 15 11 1.50 Units V V A A nA m S pF 6 45 12 740 200 15 13 6 20 8 23 10 7 1.00 110 0.5 ns nC V ns C Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Min. Typ. Max. 3.378 58 Units C/W C/W 1 2SK3771-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 50 90 80 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 20V 40 70 60 10V 30 ID [A] 50 40 PD [W] 20 30 20 10 0 0 25 50 75 100 125 150 0 0 1 2 3 4 5 6 8.0V 7.5V 7.0V 6.5V 6.0V VGS=5.5V 7 10 Tc [C] VDS [V] 100 Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 100 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C 10 10 ID[A] 1 1 0.1 0.1 0.1 gfs [S] 0 1 2 3 4 5 6 7 8 9 10 1 10 100 VGS[V] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C VGS=5.5V 6.0V 6.5V 0.16 7.0V 7.5V 8.0V 0.16 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=14.5A,VGS=10V 0.14 0.12 RDS(on) [ ] RDS(on) [ ] 0.12 0.10 0.08 max. 0.06 0.08 10V 0.04 20V 0.04 0.02 typ. 0.00 0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [C] 2 2SK3771-01MR Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A FUJI POWER MOSFET 7.0 6.5 6.0 5.5 5.0 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=29A,Tch=25 C 12 Vcc=50V 10 max. VGS(th) [V] 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 0 0 5 10 15 20 25 30 35 2 4 min. VGS [V] 8 6 Tch [C] Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25 C 10 3 Ciss 10 C [pF] Coss 10 2 IF [A] 1 0.1 0.00 10 1 Crss 10 0 10 1 10 2 0.25 0.50 0.75 1.00 1.25 1.50 VDS [V] VSD [V] 10 2 Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10 400 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=29A IAS=12A 350 td(off) 300 tf 1 250 IAS=18A t [ns] 10 td(on) EAV [mJ] 200 150 tr 100 IAS=29A 50 10 0 0 10 0 10 1 10 2 0 25 50 75 100 125 150 ID [A] starting Tch [C] 3 2SK3771-01MR FUJI POWER MOSFET 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V Single Pulse Avalanche Current I AV [A] 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ 4 |
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