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 2SC5239
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5239 900 550 7 3(Pulse6) 1.5 50(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Switching Regulator and General Purpose
(Ta=25C) 2SC5239 100max 100max 550min 10 to 30 0.5max 1.2max 6typ 35typ V MHz pF
2.5 BCE 12.0min 4.0max
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=-0.25A VCB=10V, f=1MHz
External Dimensions MT-25(TO220)
3.00.2 10.20.2 4.80.2 2.00.1
Unit
A A
V
16.00.7 8.80.2
a b
o3.750.2
V
1.35
0.65 +0.2 -0.1 2.5 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 250 RL () 250 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.15 IB2 (A) -0.45 ton (s) 0.7max tstg (s) 4.0max tf (s) 0.5max
Weight : Approx 2.6g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
3
40 0m A
VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at)( V ) Base-Emitter Saturation Voltage V B E (s at)( V) 1.5 I C/ IB=5 Const.
IC - V BE Temperature Characteristics (Typical)
(V CE= 4V) 5
300mA
200 mA
4 Collector Current I C( A) 0.5 1 5
Collector Current I C (A)
150 mA
2
100m A
1.0 VBE(sat)
3
2
1
IB=40m A
0.5
1 V C E( sat) 0 0.03 0.05 0.1 0 0 0.5 Base-Emittor Voltage V B E( V) 1.0
0
0
1
2
3
4
Collector-Emitter Voltage V C E( V)
Collector Current I C (A)
(VCE=4V) 40 D C Cur r ent Gai n h F E
j - a( C /W)
hFE - IC Characteristics (Typical)
ton*t st g*t f ( s)
125C 25C 7 5
t on *t stg * t f - I C Characteristics (Typical)
j-a - t Characteristics
4
t s tg V C C 250V IC:I B1: I B 2= 1:0.15:-0.45 1 0.5 ton 0.1 0.2 tf
-55C
Transient Thermal Resistance
Switching T im e
1
10
0.5 0.3
5 4 0.02
0.05
0.1
0.5
1
56
0.5
1
3
1
10 Time t(ms)
100
1000
Collector Current I C( A)
Collector Current I C( A)
Safe Operating Area (Single Pulse)
7 5
50
Reverse Bias Safe Operating Area
7 5 M aximum Po wer Dissipat io n P C( W) 50
P c - T a Derating
10
s
0
s
40
W ith
Collecto r Cur rent I C( A)
Co lle ctor Cu rren t I C( A)
1 0.5
1 0.5
In fin
30
ite he at si nk
0.1 0.05 Without Heatsink Natural Cooling
0.1 0.05
Without Heatsink Natural Cooling L=3mH IB2=-1.0A Duty:less than 1%
20
10 Without Heatsink 0 25 50 75 100 125 150
0.01
10
50
100
500
0.01 10
50
100
500
1000
2 0
Collector-Emitter Voltage V C E( V)
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
130


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