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| UNISONIC TECHNOLOGIES CO., LTD 2SB772S MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 PNP EPITAXIAL SILICON TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SD882S SOT-89 *Pb-free plating product number: 2SB772SL PIN CONFIGURATION PIN NO. PIN NAME 1 Emitter 2 Collector 3 Base ORDERING INFORMATION Order Number Normal Lead free 2SB772S-AB3-R 2SB772SL-AB3-R Package SOT-89 Packing Tape Reel www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., LTD 1 QW-R208-002.B 2SB772S PARAMETER Collector -Base Voltage Collector -Emitter Voltage Emitter -Base Voltage Peak Collector Current DC Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature PNP EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25 ) SYMBOL VCBO VCEO VEBO ICM IC IB PD TJ TSTG RATINGS -40 -30 -5 -7 -3 -0.6 1.0 +150 -40 ~ +150 UNIT V V V A A A W ELECTRICAL CHARACTERISTICS (Ta= 25 , unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current SYMBOL ICBO IEBO hFE1 DC Current Gain(Note 1) hFE2 Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) Current Gain Bandwidth Product fT Output Capacitance Cob Note 1: Pulse test: PW <300s, Duty Cycle<2% TEST CONDITIONS VCB=-30V,IE=0 VEB=-3V,Ic=0 VCE=-2V,Ic=-20mA VCE=-2V,Ic=-1A Ic=-2A,IB=-0.2A Ic=-2A,IB=-0.2A VCE=-5V,Ic=-0.1A VCB=-10V,IE=0,f=1MHz MIN TYP MAX -1000 -1000 400 -0.5 -2.0 UNIT nA nA 30 100 200 150 -0.3 -1.0 80 45 V V MHz pF CLASSIFICATION OF hFE2 RANK RANGE Q 100 ~ 200 P 160 ~ 320 E 200 ~ 400 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 QW-R208-002.B 2SB772S TYPICAL CHARACTERICS Fig.1 Static characteristics PNP EPITAXIAL SILICON TRANSISTOR Fig.2 Derating curve of safe operating areas 150 -Collector current, Ic (A) 1.6 - Ic Derating (%) -IB=9mA -IB=8mA -IB=7mA -IB=6mA -IB=5mA 1.2 100 S/ b 0.8 lim it e d ipa ss Di -IB=4mA -IB=3mA 0.4 50 n tio l im -IB=2mA -IB=1mA 0 0 4 8 12 16 20 -50 0 50 d it e 0 100 150 200 -Collector-Emitter voltage (V) Case Temperature, Tc ( ) Fig.3 Power Derating 3 10 12 Fig.4 Collector Output capacitance Output Capacitance(pF) Power Dissipation(W) 8 2 10 IE=0 f=1MHz 4 1 10 0 -50 0 50 100 150 200 0 10 10 0 -1 10 -2 10 -3 10 Case Temperature, Tc ( ) -Collector-Base Voltage(v) Fig.5 Current gain bandwidth product 3 10 10 1 Fig.6 Safe Operating Area Ic(max),Pulse 10 mS 0. 1 Current gainbandwidth product, fT (MHz) Ic(max),DC mS 1m S 2 10 -Collector current, Ic (A) 0 1 10 VCE=5V 10 0 IB=8mA 1 10 -1 10 0 10 10 -2 -1 10 10 -2 10 0 10 1 2 10 10 Collector current, Ic (A) Collector-Emitter Voltage UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 QW-R208-002.B 2SB772S TYPICAL CHARACTERICS(cont.) Fig.7 DC current gain 3 10 PNP EPITAXIAL SILICON TRANSISTOR Fig.8 Saturation Voltage 4 10 VCE=-2V DC current Gain, HFE 2 10 -Saturation Voltage (mV) 3 10 VBE(sat) 2 10 1 10 VCE(sat) 1 10 0 10 0 10 1 10 2 10 3 10 4 10 0 10 10 0 1 10 2 10 3 10 4 10 -Collector current, Ic (mA) -Collector current, Ic (mA) UTC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 QW-R208-002.B |
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