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| 2N7086 MECHANICAL DATA Dimensions in mm(inches) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 10.41 (0.410) 10.67 (0.420) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 123 12.07 (0.500) 19.05 (0.750) V(BR)DSS ID(A) RDS(on) 0.64 (0.025) Dia. 0.89 (0.035) 200V 14A 0.16 2.54 (0.100) BSC 3.05 (0.120) BSC FEATURES * TO257AB HERMETIC PACKAGE FOR HIGH RELIABILITY APPLICATIONS * SCREENING OPTIONS AVAILBLE TO-257AB Metal Package Pin 1 - Gate Pin 2 - Drain Pin 3 - Source * SIMPLE DRIVE REQUIREMENTS ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDS VGS ID IDM PD TJ , Tstg TL Drain - Source Voltage Gate - Source Voltage Continuous Drain Current Pulsed Drain Current 1 Power Dissipation TC = 25C TC = 100C Operating and Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) TC = 25C TC = 100C 200V 20V 14A 8.5A 56A 60W 23W -55 to 150C 300C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk Website http://www.semelab.co.uk Prelim. 1/99 2N7086 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter Test Conditions ID = 250A ID = 250A VGS = 20V TJ = 125C VGS = 10V TJ = 125C IDS = 8.5A 5.0 1550 500 220 30 4.6 13 44 10 26 10 60 30 40 77 15 35 30 100 80 95 114 56 IF = IS IF = IS dIF/dt = 100A/s VGS = 0 150 0.5 2.0 650 ns nC pF 14 0.14 0.25 0.16 0.30 Min. 200 2 Typ. Max. Unit V STATIC ELECTRICAL RATINGS BV(BR)DSS Drain-Source Breakdown Voltage VGS = 0 VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr 1Pulse Gate Threshold Voltage Gate - Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Static Drain - Source On-State Resistance 1 VDS = VGS VDS = 0 VDS = 160V VGS = 0 VDS = 10V VGS = 10V ID = 8.5A VDS = 15V VGS = 0 VDS = 25V f = 1MHz 4 100 25 250 V nA A A S Forward Transconductance1 DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Gate Drain Rise Time2 Time2 Charge2 Charge2 Time2 Charge2 Gate Source VDS = 0.5 x V(BR)DSS VGS = 10V VDD = 100V VGEN =10V RL = 7.1 RG = 4.7 ID = 14A ID = 14A Turn-On Delay Turn-Off Delay Fall Time2 SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Current Pulse Current 3 A V ns C Forward Voltage Reverse Recovery Time Reverse Recovery Charge test : Pulse Width < 300s ,Duty Cycle < 2% of Operating Temperature 3Pulse width Limited by maximum Junction Temperature 2Independent THERMAL RESISTANCECHARACTERISTICS Parameter RthJC RthJA RthCS Thermal resistance Junction-Case Thermal resistance Junction-ambient Thermal resistance Junction-ambient 1.0 Min. Typ. Max. 2.1 80 Unit K/W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk Website http://www.semelab.co.uk Prelim. 1/99 |
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