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| Lead-free Green 2N7002K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT * * * * * * * * * Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability J E G TOP VIEW S D G H K L B C D A SOT-23 Dim A B C D E M Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0 Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8 G H J K Mechanical Data * * * * * * * * Case: SOT-23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminals: Finish 3/4 Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: See Last Page Ordering & Date Code Information: See Last Page Weight: 0.008 grams (approximate) Gate Protection Diode Gate Drain L M a All Dimensions in mm ESD protected up to 2kV Source EQUIVALENT CIRCUIT Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) @ TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS Continuous Pulsed (Note 3) ID Pd RqJA Tj, TSTG Value 60 20 300 800 350 357 -65 to +150 Units V V mA mW C/W C Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. 2. 3. 4. Device mounted on FR-4 PCB. No purposefully added lead. Pulse width 10mS, Duty Cycle 1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30896 Rev. 2 - 2 1 of 4 www.diodes.com 2N7002K a Diodes Incorporated Electrical Characteristics @ TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| Ciss Coss Crss Min 60 3/4 3/4 1.0 3/4 80 3/4 3/4 3/4 Typ 3/4 3/4 3/4 1.6 3/4 3/4 3/4 3/4 3/4 3/4 Max 3/4 1.0 10 2.5 2.0 3.0 3/4 50 25 5.0 Unit V mA mA V W ms pF pF pF VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10mA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VDS = 10V, ID = 1mA VGS = 10V, ID = 0.5A VGS = 5V, ID = 0.05A VDS =10V, ID = 0.2A NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 5. Short duration test pulse used to minimize self-heating effect. 1.4 VGS = 10V 8V 6V 5V 4V 3V 1.00 10V 8V 6V 5V VDS = 10V Pulsed 1.2 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.0 TA = 125 C 0.8 4V 0.10 TA = 75 C 0.6 0.4 TA = 25 C 0.2 3V TA = -25 C 0 0 1 2 3 4 5 0.01 1 1.5 2 2.5 3 3.5 4 4.5 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 10 VGS = 10V Pulsed 2 VGS(th), GATE THRESHOLD VOLTAGE (V) VDS = 10V ID = 1mA Pulsed 1.5 TA = 125 C TA = 150 C TA = 85 C 1 1 TA = -55 C 0.5 TA = 25 C TA = 0 C TA = -25 C 0 -50 -25 0 25 50 75 100 125 150 Tch, CHANNEL TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 0.1 0.001 DS30896 Rev. 2 - 2 2 of 4 www.diodes.com 0.1 0.01 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current 1 2N7002K 10 VGS = 5V Pulsed 7 6 ID = 300mA TA = 25 C Pulsed NEW PRODUCT TA = 125 C TA = 150 C TA = 85 C 5 4 1 TA = -55 C TA = 0 C 3 2 ID = 150mA TA = 25 C TA = -25 C 1 0.1 0.001 0.01 0.1 1 0 0 2 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage 1 2.5 VGS = 10V Pulsed ID = 300mA VGS = 0V Pulsed 2 ID = 150mA IDR, REVERSE DRAIN CURRENT (A) TA = 150 C TA = 125 C 0.1 1.5 TA = 85 C TA = 25 C 1 0.01 TA = 0 C 0.5 TA = -25 C TA = -55 C 0 -75 -50 -25 0 25 50 75 100 125 150 0.001 0 0.5 1 1.5 Tch, CHANNEL TEMPERATURE ( C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage |Yfs|, FORWARD TRANSFER ADMITTANCE (S) 1 1 VGS = 10V Pulsed TA = 25 C IDR, REVERSE DRAIN CURRENT (A) VGS = 10V TA= 25C Pulsed 0.1 0.1 TA = -55 C TA = 150 C 0.01 VGS = 0V TA = 85 C 0.01 0.001 0 0.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Reverse Drain Current vs. Source-Drain Voltage 1 0.001 0.001 0.01 0.1 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current DS30896 Rev. 2 - 2 3 of 4 www.diodes.com 2N7002K Ordering Information (Note 6) Packaging SOT-23 Shipping 3000/Tape & Reel NEW PRODUCT Device 2N7002K-7 Notes: 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K7K K7K = Product Type Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 2005 S Apr 4 May 5 2006 T Jun 6 Jul 7 2007 U Aug 8 Sep 9 2008 V Oct O Nov N 2009 W Dec D Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes incorporated. DS30896 Rev. 2 - 2 YM IMPORTANT NOTICE 4 of 4 www.diodes.com 2N7002K |
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