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2N5010 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) SILICON EPITAXIAL NPN TRANSISTOR 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. FEATURES General purpose power transistor for switching and linear applications in a hermetic TO-39 package. 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45 TO-39 (TO-205AD) PACKAGE PIN 1 - Emitter PIN 2 - Base PIN 3 - Collector ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO VCER VEBO IC PTOT TJ,TSTG RJC Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Reverse Voltage Continuous Collector Current Total Device Dissipation Thermal Impedance Junction To Case TC = 25C Maximum Storage and Junction Temperature Range R = 10 500V 500V 5V 0.5A 2W 200C 50C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Parameter ICBO hFE ft Collector Base Leakage Current D.C Current Gain Transition Frequency Test Conditions VCB = 500V VCE = 10V IC =0.025A 30 20 Min. Typ. Max. 0.006 180 Unit mA -- MHz Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3696 Issue 1 |
Price & Availability of 2N5010
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