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| 580 Pleasant St. Watertown, MA 02472 PH: (617) 926-0404 FAX: (617) 924-1235 2N2218A Features * * * * * Meets MIL 19500 /251 Collector - Base Voltage 75V Collector - Current 800 mA Medium Current, Bipolar Transistor Available in TO-5 SWITCHING TRANSISTOR JAN, JANTX, JANTXV SMALL SIGNAL BIPOLAR NPN SILICON TO-39 Maximum Ratings RATING Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25 C Derate above 25 C Total Device Dissipation @ TC = 25 C Derate above 25 C Operating Junction&Storage Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD T J, Tstg VALUE 50 75 6 800 0.8 4.6 3.0 17.0 - 55 to +200 UNIT Vdc Vdc Vdc mAdc WATTS mW/C WATTS mW/C C Thermal Characteristics CHARACTERISTIC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case SYMBOL R JA R JC MAX 217 59 UNIT C/W C/W MSCO933A 10-14-98 DSW2N2218A <-> (34724) 2N2218A Electrical Characteristics (TA = 25C unless otherwise noted) OFF CHARACTERISTIC Collector - Emitter Breakdown Voltage (1) ( IC = 10 mA dc, IB = 0 ) Collector - Base Breakdown Voltage ( IC = 10 Adc, IE = 0 ) Emitter - Base Breakdown Voltage ( IE = 10 Adc, IC = 0 ) Collector - Emitter Cutoff Current ( VCE = 50 Vdc ) Collector - Base Cutoff Current ( VCB = 60 Vdc, IE = 0 ) ( VCB = 60 Vdc, IE = 0, T A = 150 C ) Emitter - Base Cutoff Current ( VEB = 4 Vdc ) ( VEB = 6 Vdc ) ON CHARACTERISTIC DC Current Gain ( IC = 0.1 mA dc, VCE = 10 Vdc ) (1) ( IC = 1 mA dc, VCE = 10 Vdc ) (1) ( IC = 10 mA dc, VCE = 10 Vdc ) (1) ( IC = 150 mA dc, VCE = 10 Vdc ) (1) ( IC = 500 mA dc, VCE = 10 Vdc ) (1) ( IC = 10 mA dc, VCE = 10 Vdc, TJ = - 55C ) (1) Collector - Emitter Saturation Voltage ( IC = 150 mAdc, IB = 15 mAdc ) (1) ( IC = 500 mAdc, IB = 50 mAdc ) (1) Base - Emitter Saturation Voltage ( IC = 150 mAdc, IB = 15 mAdc ) (1) ( IC = 500 mAdc, IB = 50 mAdc ) (1) SYMBOL V(BR)CEO V(BR)CBO 75 V(BR)EBO 6 ICES 10 ICBO 10 10 IEBO 10 10 SYMBOL hFE MIN 30 35 40 40 20 35 VCE(sat) 0.3 1.0 VBE(sat) 0.6 1.2 2.0 Vdc Vdc Vdc Vdc MAX nAdc Adc UNIT nAdc Adc nAdc Vdc Vdc MIN 50 MAX UNIT Vdc 150 120 1. Pulse Test: Pulse Width 300 s, Duty Cycle .2% MSCO933A 10-14-98 DSW2N2218A <-> (34724) 2N2218A Electrical Characteristics (TA = 25C unless otherwise noted) SMALL - SIGNAL CHARACTERISTICS Output Capacitance ( VCB = 10 Vdc, IE = 0, 100kHz f 1 MHz ) Input Capacitance ( VEB = 0.5 Vdc, IC = 0, 100kHz f 1 MHz ) SWITCHING CHARACTERISTICS Turn - On Time ( VCC = 30 Vdc, IC = 150 mAdc, IB1 =15 mAdc) ( See FIGURE 1 ) Turn - Off Time ( VCC = 30 Vdc, IC = 150 mAdc, IB1 = - IB2 = 15 mAdc) ( See FIGURE 2 ) SYMBOL Cobo Cibo 25 SYMBOL ton MIN MAX pF UNIT MIN MAX 8.0 UNIT pF 35 toff 300 ns ns Small - Signal AC Characteristics (TA = 25C) LOW FREQUENCY Common - Emitter Forward Current Transfer Ratio ( IC = 1 mA, VCE = 10 V, f = 1kHz ) HIGH FREQUENCY Common - Emitter Forward Current Transfer Ratio ( IC = 20 mA, VCE = 20 V, f = 100 MHz ) SYMBOL hfe MIN 35 |hfe| 2.5 *1 MAX UNIT 12 Spice Model (based upon typical device characteristics) XTI = 3.0 IKF = 1.255 IKR = 0.8992 CJE = 29.6p XTF = 0.0 EG = 1.11 NK = 0.9394 RC = 0.0 MJE = 0.3333 VTF = 10.0 ) Q2N2218A NPN ( IS = 21.2f + NE = 2.05 + NC = 1.605 + FC = 0.5 + ITF = 1.0 VAF = 103.8 XTB = 1.5 CJC = 19.4p VJE = 0.75 BF = 90.7 BR = 1.031 MJC = 0.3333 TR = 275.0 n ISE = 3.34p ISC = 3.299p VJC = 0.75 TF= 564.5p *1. Microsemi Corp. claims no responsibility for misapplication of Spice Model information. Spice modeling should be used as a precursor guide to in-circuit performance. Actual performance is the responsibility of the user/designer. MSCO933A 10-14-98 DSW2N2218A <-> (34724) 2N2218A TO-39 CASE OUTLINE DIE CHARACTERISTICS Back is Collector Chip Thickness is: 10 MILS TYP Metalization is: Top = Al, Back = Au DIE OUTLINE MSCO933A 10-14-98 DSW2N2218A <-> (34724) 2N2218A FIGURE 1 Saturated Turn-on Time Test Circuit t FIGURE 2 Saturated Turn-off Time Test Circuit MSCO933A 10-14-98 DSW2N2218A <-> (34724) 2N2218A DC CURRENT GAIN VCE = 10 V 125 125 typ @ 25C 100 100 hFE CURRENT GAIN 75 75 50 typ @ -55C 50 25 25 0 .0001 .001 .01 IC COLLECTOR CURRENT (A) .1 1 0 FIGURE 3 VCE, COLLECTOR-EMITTER (V) COLLECTOR SATURATION vs BASE CURRENT TJ = 25 C 1.0 1.0 0.8 IC = 500 mA 0.6 IC = 150 mA 0.4 0.8 0.6 0.4 0.2 0.2 0.0 .0001 .001 .01 IB, BASE CURRENT (A) .1 1 0.0 FIGURE 4 MSCO933A 10-14-98 DSW2N2218A <-> (34724) 2N2218A VBE, BASE-EMITTER VOLTAGE (V) BASE SATURATION vs BASE CURRENT TJ = 25 C 1.25 1.25 IC = 500 ma 1.00 IC = 150 ma 1.00 0.75 0.75 0.50 .001 0.50 .01 .1 1 IB, BASE CURRENT (A) FIGURE 5 JUNCTION CAPACITANCE TJ = 25 C 100 kHz < f < 1 MHz JUNCTION CAPACITANCE (pF) 30 30 25 CIBO 20 COBO 15 25 20 15 10 10 5 5 0 .01 .1 1 10 REVERSE JUNCTION VOLTAGE (V) 0 100 FIGURE 6 MSCO933A 10-14-98 DSW2N2218A <-> (34724) 2N2218A SWITCHING TURN - 0N TIME TJ = 25 C IC/IB = 10 100 100 ton TIME (ns) max. min. 10 10 100 COLLECTOR CURRENT (mA) 10 1000 FIGURE 7 SWITCHING TURN - OFF TIME TJ = 25 C IC/IB = 10 1000 1000 (ns) max. toff TIME min. 100 10 100 COLLECTOR CURRENT (mA) 100 500 FIGURE 8 MSCO933A 10-14-98 DSW2N2218A <-> (34724) 2N2218A NORMALIZED GAIN VS FREQUENCY TJ = 25C IC = 20 mA VCE = 20 V 1 1 NORMALIZED GAIN .1 .1 .01 1 10 100 FREQUENCY MHz .01 1000 FIGURE 9 MSCO933A 10-14-98 DSW2N2218A <-> (34724) |
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