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| DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB31 Schottky barrier diode Product specification 2002 Jan 11 Philips Semiconductors Product specification Schottky barrier diode FEATURES * Very low forward voltage * Guard ring protected * Ultra small SMD package. APPLICATIONS * Ultra high-speed switching * Voltage clamping * Protection circuits * Low current rectification * Low power consumption applications (e.g. hand-held devices). DESCRIPTION Planar Schottky barrier diode in a SOD523 (SC-79) ultra small SMD plastic package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF IFRM IFSM Tstg Tj Tamb PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp 1 s; 0.5 t = 8.3 ms half sine wave; JEDEC method CONDITIONS - - - - -65 - -65 MIN. 1PS79SB31 handbook, halfpage k Marking code: G3. The marking bar indicates the cathode. Top view a MAM403 Fig.1 Simplified outline SOD523 (SC-79) and symbol. MAX. 30 200 300 1000 +150 125 +125 V UNIT mA mA mA C C C 2002 Jan 11 2 Philips Semiconductors Product specification Schottky barrier diode ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS see Fig.2; IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 100 mA IF = 200 mA IR Cd Note 1. Pulse test: tp = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-79 (SOD523) standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 450 continuous reverse current diode capacitance VR = 10 V; note 1; see Fig.3 VR = 1 V; f = 1 MHz; see Fig.4 130 190 255 355 420 2.5 20 MIN. 1PS79SB31 MAX. 190 250 300 410 500 30 25 UNIT mV mV mV mV mV A pF UNIT K/W 2002 Jan 11 3 Philips Semiconductors Product specification Schottky barrier diode GRAPHICAL DATA MGU517 1PS79SB31 103 handbook, halfpage IF (mA) 104 handbook, halfpage IR (A) (1) MGU518 103 (2) 102 102 (1) (2) (3) 10 (3) 10 1 1 0 0.2 0.4 0.6 0.8 VF (V) 1 10-1 0 10 20 VR (V) 30 (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C. (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C. Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 Reverse current as a function of reverse voltage; typical values. handbook, halfpage 40 MGU519 Cd (pF) 30 20 10 0 0 10 20 VR (V) 30 (1) f = 1 MHz; Tamb = 25 C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2002 Jan 11 4 Philips Semiconductors Product specification Schottky barrier diode PACKAGE OUTLINE Plastic surface mounted package; 2 leads 1PS79SB31 SOD523 A c HE vMA D A 0 0.5 scale 1 mm 1 E bp 2 DIMENSIONS (mm are the original dimensions) UNIT mm A 0.7 0.5 bp 0.35 0.25 c 0.2 0.1 D 1.3 1.1 E 0.9 0.7 HE 1.7 1.5 v 0.15 (1) Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523 REFERENCES IEC JEDEC EIAJ SC-79 EUROPEAN PROJECTION ISSUE DATE 98-11-25 2002 Jan 11 5 Philips Semiconductors Product specification Schottky barrier diode DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS 1PS79SB31 This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2002 Jan 11 6 Philips Semiconductors Product specification Schottky barrier diode NOTES 1PS79SB31 2002 Jan 11 7 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2002 SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp8 Date of release: 2002 Jan 11 Document order number: 9397 750 08964 |
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