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| Advance Product Information April 25, 2005 Q-band Power Amplifier Key Features * * * * * * TGA4043 Frequency Range: 40-45 GHz 29 dBm Nominal Pout @ P1dB 10 dB Nominal Gain 0.25 um pHEMT Technology Bias 7V @ 500 mA Chip Dimensions 3.08 mm x 3.14 x 0.10 mm (0.121 x 0.124 x 0.004 in) Primary Applications * * * Point to Point Radio Point to Multipoint Radio Military Communications Product Description The TriQuint TGA4043 is a compact High Power Amplifier MMIC for Q-band applications. The part is designed using TriQuint's proven standard 0.25 um gate power pHEMT production process. The TGA4043 provides a nominal 28 dBm of output power at 1 dB gain compression from 40-45 GHz with a small signal gain of 10 dB. The part is ideally suited for low cost emerging markets such as Point-to-Point Radio and Point-to-Multi Point Communications. The TGA4043 is 100% DC and RF tested on-wafer to ensure performance compliance. 15 12 9 6 3 0 -3 -6 -9 -12 -15 30 32 31 Measured Fixtured Data Bias Conditions: Vd = 7V, Id = 500mA 25 Gain 20 10 5 0 Input -5 -10 -15 -20 -25 40 42 44 46 48 50 Output 32 34 36 38 Frequency (GHz) P1dB (dBm) 30 29 28 27 26 25 40 40.5 41 41.5 42 42.5 43 43.5 44 44.5 45 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Return Loss (dB) 15 Gain (dB) Advance Product Information April 25, 2005 TABLE I MAXIMUM RATINGS 1/ SYMBOL V + TGA4043 PARAMETER Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature VALUE 8V -5V TO 0V 960 mA 56 mA 27 dBm 4.6 W 150 C 320 C -65 to 150 C NOTES 2/ VI+ | IG | PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 2/ 2/ 2/, 3/ 4/, 5/ These ratings represent the maximum operable values for this device. Current is defined under no RF drive conditions. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this power dissipation with a base plate temperature of 70 C, the median life is 1 E+6 hours. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET. 5/ TABLE II DC PROBE TEST (TA = 25 C, Nominal) SYMBOL Idss, Q1 G m, Q1 Vp, Q1,2, 3-6, 7, 8, 9-12 VBVGD, Q1,2 VBVGS, Q1 PARAMETER Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage GateDrain Breakdown Voltage GateSource MINIMUM 40 88 -1.5 -30 -30 MAXIMUM 188 212 -0.5 -8 -8 UNIT mA mS V V V 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information April 25, 2005 TGA4043 TABLE III RF CHARACTERIZATION TABLE (TA = 25 C, Nominal) Vd = 7V, Id = 500 mA SYMBOL Gain IRL ORL PARAMETER Small Signal Gain Input Return Loss Output Return Loss Output Power @ 1dB Gain Compression TEST CONDITION F = 40-45 GHz F = 40-45 GHz F = 40-45 GHz F = 40-45 GHz TYPICAL LIMITS 10 14.5 12.5 29 dBm UNITS dB dB dB P1dB TABLE IV THERMAL INFORMATION* Parameter RJC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 7 V ID = 500 mA Pdiss = 3.5 W TCH (oC) 130 RTJC (qC/W) 17.3 TM (HRS) 5.9 E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information April 25, 2005 TGA4043 Measured Fixtured Data Bias Conditions: Vd = 7V, Id = 500mA 15 12 9 6 3 0 -3 -6 -9 -12 -15 30 32 34 36 38 40 42 44 46 48 50 Output Input Gain 25 20 10 5 0 -5 -10 -15 -20 -25 15 Frequency (GHz) 32 31 29 Output power (dBm) 31 P1dB (dBm) 30 29 28 27 26 25 40 40.5 41 41.5 42 42.5 43 43.5 44 44.5 45 27 25 23 21 19 17 15 6 8 10 12 14 16 18 20 22 24 40 GHz 41 GHz 42 GHz 43 GHz 44 GHz 45 GHz Frequency (GHz) Input power (dBm) 16 14 12 PAE (%) 10 8 6 4 2 0 6 8 10 12 14 16 18 20 22 24 Input power (dBm) 40 GHz 41 GHz 42 GHz 43 GHz 44 GHz 45 GHz Return Loss (dB) Gain (dB) 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information April 25, 2005 TGA4043 Mechanical Characteristics # ! A & " #A !# ' % A " ! # ( " A $ ( ! " % & A ( " ! $ ! A ( ( !%&!A $ '&%A&# ($$A"' !%A$ ! ' A $ # ! & A & ' % A " ! # ( " A $ ( ! " & A ( " ! $ ! A ( ( ! ( # % A % " & % A ! Vv)AvyyvrrAvpur Uuvpxr)A A#ArsrrprAy 8uvArqtrAAiqAhqAqvrvAhrAuAAprrAsAiqAhq 8uvAvrAyrhpr)AA$ A! BI9ADTA768FTD9@APAAHHD8 7qAQhqAAE ASAADAAAAAA 7qAQhqAAE!AWtA AAAAAAAAAAAA 7qAQhqAAE"AWqA AAAAAAAAAAAA 7qAQhqAAE#AWtA AAAAAAAAAAAA 7qAQhqAAE$AWqA AAAAAAAAAAAA 7qAQhqAAE%A7hAAAAAAA 7qAQhqAAE&ASAAPAA 7qAQhqAAE'A7hAAAAAAA 7qAQhqAAE(AWqA!AAAAAAAAAAA 7qAQhqAAE AWtA!AAAAAAAAA 7qAQhqAAE AWqAAE!AAAAAAA 7qAQhqAAE !AWtAAE!AAAAAAA $AA "A#AA$ $AA $A#AA# $AA $A#AA# $AA $A#AA# $AA $A#AA# $AA $A#AA# $AA "A#AA$ $AA "A#AA$ $AA $A#AA# $AA $A#AA# $AA $A#AA# $AA $A#AA# GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information April 25, 2005 TGA4043 Recommended Assembly Diagram Vg 10: 1PF 1PF 10: Vd = 7V 0.01PF 100pF 100pF 100pF 100pF 0.01PF Vg Vd = 7V Note: We recommend 1F caps on the bias lines to suppress possible low frequency oscillations. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information April 25, 2005 TGA4043 Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com |
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