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September 29, 2005
17 - 43GHz MPA/Multiplier
Key Features
* * * * * *
TGA4040
Frequency: 17 - 43 GHz 25 dB Nominal Gain @ Mid-band 22 dBm Nominal Output P1dB 2x and 3x Multiplier Function 0.15 um 3MI pHEMT Technology Chip Dimensions 1.72 x 0.76 x 0.10 mm (0.068 x 0.030 x 0.004 in)
Primary Applications
* * * * Point-to-point radio EW Instrumentation Frequency Multiplier
Product Description
The TriQuint TG4040 is a Medium Power Amplifier and Multiplier for a wide band of 17 - 43GHz applications. The part is designed using TriQuint's 0.15um power pHEMT production process. The TGA4040 provides a nominal 25 dB small signal gain with 22 dBm output power @ 1 dB gain compression. For 2x and 3x Multiplier Function, TGA4040 provides 15 dBm typical of Output Power @ 9 dBm Pin. The part is ideally suited for applications such as Point-to-Point Radio, EW, Instrumentation and frequency multipliers. The TGA4040 is 100% DC and RF tested onwafer to ensure performance compliance.
P1dB (dBm)
Amplifier Performance
30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30
Bias Conditions: Vd = 5 V, Idq = 139 mA
Gain
S-Parameters (dB)
IRL
ORL
17 19 21 23 25 27 29 31 33 35 37 39 41 43 Frequency (GHz)
26 24 22 20 18 16 14 12 10 17 19 21 23 25 27 29 31 33 35 37 39 41 43 Frequency (GHz)
5v_225ma 5v_172mA 5v_139mA
The TGA4040 has a protective surface passivation layer providing environmental robustness. Lead-Free & RoHS compliant.
Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 29, 2005
TGA4040
TABLE I MAXIMUM RATINGS 1/ SYMBOL
Vd Vg Id Ig PIN PD TCH TM TSTG 1/ 2/ 3/ 4/
PARAMETER
Drain Voltage Gate Voltage Range Drain Current Gate Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
VALUE
6V -2 TO 0 V TBD 7 mA 20 dBm See note 4/ 150 C 320 C -65 to 150 0C
0 0
NOTES
2/
2/ 3/ 3/
2/ 5/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD . Total current for the entire MMIC. For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 0C - TBASE 0C) / 66.7 (0C/W) Where TBASE is the base plate temperature.
5/
Junction operating temperature will directly affect the device median time to failure (MTTF). Fo maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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September 29, 2005
TGA4040
TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal)
2x 3x UNITS Multiplier Multiplier
9 - 22 5 120 -1.1 -0.65 15 6 - 12 1 5 160 -0.6 15 GHz V V mA V V dB dB dB dBm dBm dBm dB/ C
0
PARAMETER
Frequency Range Drain Voltage, Vd1* Drain Voltage, Vd* Total Drain Current* Gate Voltage, Vg1* Gate Voltage, Vg* Small Signal Gain, S21 Input Return Loss, S11 Output Return Loss, S22 Output Power @ 1dB Gain compression, P1dB 5V @ 139mA 5V @ 225mA Output TOI Output Power @ Pin = 9dBm Gain Temperature Coefficient
Amplifier
17 - 43 5 139 -0.65 25 12 8 20 22 28 -0.04
* See bias plan on page 8 for amplifier and 2x multiplier, page 9 for 3x multiplier
TABLE III THERMAL INFORMATION
PARAMETER TEST CONDITIONS Vd = 5 V Id = 139 mA Pdiss = 0.69 W TCH O ( C) 116 TJC (qC/W) 66.7 TM (HRS) 2.4E+7
JC Thermal Resistance (channel to Case)
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70oC baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated.
3
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September 29, 2005
Measured Amplifier Data
28 26 24 22 20 18 Gain (dB) 16 14 12 10 8 6 4 2 0 15 17 19 21 23 25 27 29 31 33 35 37 39 41
Bias Conditions: Vd = 5 V, Idq = 139 mA
TGA4040
43
45
Frequency (GHz) 0 -2 -4 -6 -8 Return Loss (dB) -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45
4
ORL IRL
Frequency (GHz)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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September 29, 2005
Measured Amplifier Data
26 Output Power @ 1dB Gain Compression (dBm) 24 22 20 18 16 14 12 10 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43
Bias Conditions: Vd = 5 V, Idq Vary
TGA4040
5v_225ma 5v_172mA 5v_139mA
45
47
Frequency (GHz)
5
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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September 29, 2005
Measured 2X Multiplier Data
25 20 15 10 Output Power (dBm) 5 0 -5 -10 -15 -20 -25
Pout @ 2X
TGA4040
Bias Conditions: Vd = 5 V, Idq = 120mA, Vg1 = -1.1V, Pin = 9dBm
-30 -35 6 8 10 12 14 16 18 Input Frequency(GHz) 20
Fundamental Pout
22
24
26
Measured 3X Multiplier Data
25 20 15 10 Output Power (dBm) 5 0 -5 -10 -15 -20 -25
Pout @ 3X
Bias Conditions: Vd = 5 V, Vd1 = 1V, Idq = 160mA, Pin = 8dBm
-30 -35 4 5 6 7 8 9 10 11 12
Fundamental Pout
13
14
15
16
Frequency (GHz)
6
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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September 29, 2005
TGA4040
Mechanical Drawing
0.095 (0.004) 0.331 (0.013) 0.522 (0.021) 1.176 (0.046) 1.625 (0.064)
0.760 (0.030)
3
0.530 (0.021) 0.380 (0.015) 0.230 (0.009) 0.086 (0.003) 0
4
5
6 7 8 9
0.673 (0.026) 0.530 (0.021) 0.380 (0.015) 0.230 (0.009) 0.086 (0.003)
2 1 14 13 12 11
RC B RC B
10
0 0.086 (0.003)
0.437 (0.017)
1.123 (0.044)
1.635 1.720 (0.064) (0.068)
Units: millimeters (inches) Thickness: 0.100 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) GND is back side of MMIC Bond pad #1: Bond pad #2, #3, #6, #7, #9, #10, #12, #14: Bond pad #4: Bond pad #5: Bond pad #8: Bond pad #11: Bond pad #13: (RF In) (GND) (Vd1) (Vd) (RF Out) (Vg) (Vg1) 0.100 x 0.150 (0.004 x 0.006) 0.081 x 0.081 (0.003 x 0.003) 0.081 x 0.081 (0.003 x 0.003) 0.081 x 0.081 (0.003 x 0.003) 0.100 x 0.150 (0.004 x 0.006) 0.081 x 0.081 (0.003 x 0.003) 0.081 x 0.081 (0.003 x 0.003)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
7
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 29, 2005
TGA4040
Recommended Chip Assembly Diagram Amplifier & 2x Multiplier
Vd
.01uF RF IN RF OUT
.01uF
.01uF
Vg1
Vg
Amplifier Set Vd = 5.0V Vary (Vg + Vg1) to achieve Id = 139mA
2x Multiplier Set Vd = 5.0V Set Vg1 = -1.1V Vary Vg to achieve Id = 120mA
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
8
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 29, 2005
TGA4040
Recommended Chip Assembly Diagram 3x Multiplier
Vd1
Vd
.01uF
.01uF
RF IN
RF OUT
.01uF
.01uF
Vg1
Vg
3x Multiplier Set Vd = 5.0V Set Vd1 = 1.0V Vary (Vg + Vg1) to achieve(Id + Id1) = 160mA
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
9
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 29, 2005
TGA4040 Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
0
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
10
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

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