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| PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA835TF FEATURES * LOW NOISE: Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA * HIGH GAIN: Q1: |S21E|2 = 8.5 dB TYP at f = 1 GHz, VCE = 3 V, lc = 10 mA Q2: = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA * * 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE 2 DIFFERENT BUILT-IN TRANSISTORS (Q1: NE685, Q2: NE856) |S21E|2 OUTLINE DIMENSIONS (Units in mm) Package Outline TS06 (Top View) 2.1 0.1 1.25 0.1 0.65 2.0 0.2 1.3 1 6 0.22 - 0.05 (All Leads) +0.10 2 5 3 4 0.6 0.1 0.45 0 ~ 0.1 0.13 0.05 DESCRIPTION The UPA835TF has two different built-in transistors for low cost amplifier and oscillator applications in the VHF/UHF band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for two-stage amplifiers. This device is also ideally suited for use in a VCO/buffer amplifier application. The thinner package style allows for higher density designs. PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right. ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE Q1 fT Cre |S21E|2 NF ICBO IEBO hFE Q2 fT Cre |S21E|2 NF PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 3 V, IC = 10 mA Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC =10 mA, f = 2 GHz Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 3 V, IC = 7 mA Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz GHz pF dB dB 7 GHz pF dB dB A A 100 3.0 4.5 0.7 9 1.2 2.5 1.5 7 UNITS A A 75 12 0.4 8.5 1.5 2.5 1.0 1.0 145 0.7 MIN UPA835TF TS06 TYP MAX 0.1 0.1 150 Notes: 1. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. California Eastern Laboratories UPA835TF ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS Q1 9 6 2 30 Q2 20 12 3 100 150 150 2002 150 150 -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. When operating both devices, the power dissipation for either device should not exceed 110 mW. TYPICAL PERFORMANCE CURVES (TA = 25C) Q1 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation, PT (mW) Free Air Q2 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation, PT (mW) Free Air 2 elements in total 200 2 elements in total 200 Q1 when using 1 element Q2 when using 1 element Q1 when using 2 elements 100 Q2 when using 2 elements 100 0 50 100 150 0 8 100 150 Ambient Temperature, TA (C) Ambient Temperature, TA (C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 50 VCE = 3 V 40 20 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 3 V Collector Current, lc (mA) 30 Collector Current, lc (mA) 10 20 10 0 0.5 1.0 0 0.5 1.0 Base to Emitter Voltage, VBE (V) Base to Emitter Voltage, VBE (V) UPA835TF TYPICAL PERFORMANCE CURVES (TA = 25C) Q1 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 60 500 A 25 Q2 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE lB=160 A 140 A 400 A Collector Current, lc (mA) Collector Current, lc (mA) 50 20 120 A 15 100 A 80 A 10 60 A 40 A 5 20 A 40 300 A 30 200 A 20 lB=100 A 10 0 1 2 3 4 5 6 0 5 10 Collector to Emitter Voltage, VCE (V) Collector to Emitter Voltage, VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 200 DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 3 V DC Current Gain, hFE 5V VCE = 3 V 100 DC Current Gain, hFE 50 100 100 50 20 0 0.1 0.2 0.5 1 2 5 10 20 10 0.5 1 5 10 50 Collector Current, lc (mA) Collector Current, lc (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 14 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 f = 2 GHz 5V Gain Bandwidth Product fT (GHz) 12 Gain Bandwidth Product fT (GHz) VCE = 3 V f = 1.0 GHz 10 10 3V 8 5 VCE = 1 V 6 2 4 2 0.5 1 2 5 10 20 50 1 0.5 1 5 10 50 Collector Current, lc (mA) Collector Current, lc (mA) UPA835TF TYPICAL PERFORMANCE CURVES (TA = 25C) Q1 INSERTION POWER GAIN vs. COLLECTOR CURRENT 10 15 Q2 INSERTION POWER GAIN vs. COLLECTOR CURRENT Insertion Power Gain, |S21E|2 (dB) VCE = 3 V f = 1.0 GHz Insertion Power Gain, |S21E|2 (dB) f = 2 GHz 5V 8 3V 10 6 VCE = 1 V 5 4 2 0.5 2 5 10 20 50 0 0.5 1 5 10 50 100 Collector Current, lc (mA) Collector Current, lc (mA) NOISE FIGURE vs. COLLECTOR CURRENT 4 VCE = 3 V f = 2 GHz 6 NOISE FIGURE vs. COLLECTOR CURRENT VCE = 3 V f = 1 GHz Noise Figure, NF (dB) 3 Noise Figure, NF (dB) 4 2 2 1 0 0.5 1 2 5 10 20 50 0 0.5 1.0 5.0 10 50 100 Collector Current, lc (mA) Collector Current, lc (mA) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.6 f = 1 MHz 5.0 FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1 MHz Feedback Capacitance, Cre (pF) 0.5 Feedback Capacitance, Cre (pF) 2.0 1.0 0.4 0.5 0.3 0.2 0.2 0.5 1 2 5 10 20 0.1 1 2 5 10 20 50 Collector to Base Voltage, VCB (V) Collector to Base Voltage, VCB (V) UPA835TF TYPICAL PERFORMANCE CURVES (TA = 25C) Q2 INSERTION POWER GAIN vs. FREQUENCY 24 Insertion Power Gain, |S21E|2 (dB) VCE = 3 V lc = 7 mA 20 16 12 8 4 0 0.1 0.2 0.5 1.0 2.0 5.0 Frequency, f (GHz) TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 1 mA, Z0 = 50 FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.98 0.97 0.95 0.93 0.90 0.87 0.84 0.80 0.76 0.73 0.64 0.51 0.43 0.35 0.31 0.35 S11 ANG -5.93 -11.90 -18.17 -24.00 -30.10 -36.17 -42.49 -48.69 -55.28 -61.26 -74.79 -96.77 -112.09 -138.38 175.03 140.64 MAG 2.38 2.36 2.39 2.35 2.35 2.33 2.30 2.29 2.29 2.24 2.19 2.10 2.00 1.84 1.62 1.41 S21 ANG 172.32 165.08 158.35 151.83 145.70 140.22 134.45 129.32 123.53 118.31 108.30 93.80 84.74 72.75 54.64 40.02 MAG 0.02 0.04 0.06 0.07 0.09 0.10 0.12 0.13 0.14 0.15 0.16 0.18 0.19 0.19 0.20 0.21 S12 ANG 85.76 81.15 76.27 72.22 68.30 64.18 60.68 56.90 53.94 51.07 45.85 39.24 36.24 32.40 29.55 28.96 MAG 1.00 0.99 0.97 0.96 0.94 0.92 0.89 0.87 0.84 0.81 0.76 0.69 0.65 0.60 0.53 0.47 S22 ANG -3.86 -7.44 -11.14 -14.73 -18.02 -21.42 -24.18 -27.47 -29.94 -32.50 -36.89 -42.90 -46.39 -51.51 -59.91 -69.74 Q2 VCE = 3 V, IC = 1 mA, Z0 = 50 FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.97 0.93 0.89 0.84 0.80 0.76 0.74 0.71 0.69 0.68 0.67 0.67 0.68 0.69 0.72 0.75 S11 ANG -20.79 -40.50 -59.73 -76.87 -93.28 -107.72 -120.25 -131.32 -141.35 -150.05 -165.04 176.90 166.97 154.69 137.73 124.46 MAG 2.52 2.43 2.35 2.20 2.11 1.99 1.85 1.74 1.64 1.53 1.36 1.17 1.06 0.94 0.79 0.68 S21 ANG 162.21 147.42 134.45 123.37 113.14 104.15 96.02 88.78 82.34 76.48 66.07 52.95 45.23 35.40 21.71 11.96 MAG 0.04 0.08 0.11 0.13 0.14 0.15 0.16 0.15 0.15 0.15 0.14 0.13 0.13 0.14 0.21 0.30 S12 ANG 76.22 63.75 53.38 44.64 38.01 32.06 27.52 24.29 21.95 20.46 19.44 24.64 32.01 44.56 55.71 51.65 MAG 0.98 0.93 0.87 0.81 0.76 0.71 0.68 0.65 0.62 0.60 0.57 0.53 0.51 0.48 0.45 0.46 S22 ANG -8.81 -16.39 -22.34 -27.24 -30.90 -34.29 -36.96 -39.46 -41.97 -44.52 -50.06 -59.83 -68.26 -82.95 -114.70 -152.23 UPA835TF TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 3 mA, Z0 = 50 FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.94 0.90 0.85 0.80 0.74 0.67 0.60 0.54 0.47 0.42 0.32 0.21 0.17 0.16 0.22 0.29 S11 ANG -9.29 -18.39 -27.47 -36.15 -44.62 -52.69 -60.71 -68.45 -75.60 -82.57 -96.78 -122.39 -143.90 179.12 136.13 115.80 MAG 6.55 6.32 6.21 5.98 5.77 5.51 5.28 5.03 4.76 4.50 4.02 3.42 3.10 2.70 2.24 1.89 S21 ANG 168.08 157.85 148.76 140.53 133.00 126.23 119.27 113.12 107.23 101.99 92.52 80.83 74.15 64.83 51.62 39.81 MAG 0.02 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.11 0.13 0.15 0.16 0.18 0.21 0.23 S12 ANG 84.10 76.93 71.79 66.81 63.60 60.13 58.07 55.93 54.62 53.45 51.59 49.61 48.63 46.70 43.76 40.27 MAG 0.98 0.95 0.91 0.86 0.81 0.76 0.72 0.68 0.64 0.61 0.56 0.50 0.46 0.42 0.36 0.31 S22 ANG -6.91 -13.21 -18.80 -23.80 -27.41 -31.19 -33.67 -36.31 -38.10 -39.74 -42.63 -46.74 -49.50 -54.02 -63.34 -75.36 Q2 VCE = 3 V, IC = 3 mA, Z0 = 50 FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.90 0.82 0.73 0.67 0.62 0.59 0.57 0.56 0.55 0.54 0.55 0.56 0.57 0.60 0.64 0.68 S11 ANG -29.30 -56.11 -80.85 -101.56 -118.49 -131.80 -142.87 -152.14 -159.99 -168.88 -178.59 167.41 159.71 149.93 136.23 125.06 MAG 6.71 6.09 5.56 4.95 4.38 3.86 3.44 3.11 2.82 2.59 2.21 1.84 1.66 1.45 1.20 1.02 S21 ANG 155.29 137.78 123.40 111.97 102.51 94.93 88.40 82.68 77.69 73.06 64.68 53.63 46.97 37.59 23.63 11.49 MAG 0.04 0.07 0.09 0.10 0.11 0.11 0.11 0.12 0.12 0.13 0.13 0.15 0.17 0.19 0.25 0.31 S12 ANG 71.05 56.98 48.29 42.87 39.94 38.27 37.56 37.77 38.47 39.41 41.56 45.41 47.04 48.39 47.57 42.77 MAG 0.93 0.81 0.68 0.59 0.52 0.47 0.43 0.40 0.38 0.36 0.32 0.28 0.25 0.22 0.19 0.23 S22 ANG -16.80 -28.76 -35.65 -40.13 -42.64 -44.51 -45.87 -47.30 -48.65 -50.22 -54.00 -62.05 -70.04 -85.71 -125.28 -169.77 UPA835TF TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 5 mA, Z0 = 50 FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.90 0.84 0.77 0.69 0.60 0.52 0.44 0.38 0.32 0.28 0.20 0.13 0.11 0.13 0.21 0.28 S11 ANG -12.12 -23.51 -34.84 -45.03 -54.58 -62.89 -70.48 -77.63 -84.12 -90.92 -105.44 -137.90 -167.88 152.80 121.76 107.74 MAG 10.05 9.49 9.08 8.52 7.94 7.32 6.74 6.21 5.71 5.28 4.56 3.78 3.39 2.93 2.41 2.03 S21 ANG 165.07 152.86 142.06 132.57 123.96 116.79 109.99 104.22 99.08 94.41 86.53 76.56 70.79 62.58 50.64 39.80 MAG 0.02 0.03 0.05 0.06 0.07 0.08 0.08 0.09 0.10 0.11 0.12 0.14 0.15 0.18 0.21 0.24 S12 ANG 82.08 74.99 69.42 65.57 63.02 60.80 59.78 58.73 57.98 57.45 56.41 54.85 53.69 51.42 47.56 42.91 MAG 0.97 0.92 0.85 0.78 0.72 0.66 0.62 0.58 0.55 0.53 0.48 0.43 0.40 0.37 0.31 0.26 S22 ANG -9.12 -17.06 -23.23 -28.22 -31.57 -34.45 -36.34 -38.08 -39.38 -40.58 -42.73 -46.37 -49.23 -54.00 -64.32 -78.22 Q2 VCE = 3 V, IC = 5 mA, Z0 = 50 FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.83 0.72 0.62 0.56 0.53 0.51 0.50 0.49 0.49 0.49 0.50 0.52 0.53 0.56 0.61 0.66 S11 ANG -36.95 -69.61 -97.36 -117.96 -133.20 -145.02 -154.27 -162.17 -168.79 -174.60 175.37 163.26 156.57 147.71 135.31 124.98 MAG 10.41 9.00 7.70 6.47 5.47 4.72 4.13 3.68 3.31 3.02 2.56 2.11 1.90 1.65 1.36 1.16 S21 ANG 149.93 130.38 115.33 104.59 96.45 89.97 84.56 79.59 75.30 71.24 63.72 53.63 47.43 38.70 25.02 13.38 MAG 0.04 0.06 0.07 0.08 0.09 0.10 0.10 0.11 0.12 0.13 0.14 0.17 0.19 0.22 0.27 0.32 S12 ANG 67.41 54.36 48.48 46.08 45.55 45.75 46.29 47.21 48.13 48.87 49.97 50.87 50.65 49.28 45.44 39.42 MAG 0.87 0.70 0.56 0.46 0.40 0.35 0.32 0.29 0.27 0.25 0.22 0.18 0.15 0.11 0.11 0.18 S22 ANG -23.15 -36.92 -43.33 -46.73 -48.28 -49.37 -50.23 -50.94 -51.90 -53.05 -56.22 -64.21 -73.44 -94.06 -153.25 -163.89 UPA835TF TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 10 mA, Z0 = 50 FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.82 0.72 0.60 0.49 0.40 0.33 0.27 0.22 0.18 0.15 0.10 0.07 0.08 0.13 0.21 0.29 S11 ANG -17.52 -33.22 -46.83 -57.62 -65.90 -72.93 -79.33 -85.38 -91.73 -98.81 -118.22 -176.19 149.79 125.94 109.57 100.79 MAG 16.52 14.93 13.32 11.65 10.15 8.90 7.89 7.07 6.39 5.83 4.95 4.05 3.61 3.12 2.54 2.14 S21 ANG 159.99 144.21 131.03 120.45 112.22 105.92 100.37 95.73 91.61 87.88 81.32 72.83 67.81 60.46 49.58 39.46 MAG 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.08 0.09 0.10 0.11 0.14 0.15 0.18 0.22 0.25 S12 ANG 80.28 72.82 68.07 65.62 65.03 63.86 63.74 63.50 63.16 62.77 61.85 59.79 58.31 55.55 50.37 45.03 MAG 0.94 0.85 0.75 0.67 0.60 0.56 0.52 0.49 0.46 0.45 0.41 0.38 0.35 0.32 0.27 0.21 S22 ANG -12.68 -22.43 -28.43 -32.14 -34.25 -35.78 -36.80 -37.69 -38.46 -39.30 -41.01 -44.69 -47.69 -53.15 -65.07 -81.46 Q2 VCE = 3 V, IC = 7 mA, Z0 = 50 FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 MAG 0.78 0.64 0.55 0.50 0.48 0.47 0.46 0.46 0.46 0.46 0.47 0.50 0.51 0.54 0.59 0.64 S11 ANG -43.98 -81.06 -109.37 -128.61 -142.36 -152.78 -161.04 -168.03 -173.82 -179.09 171.98 160.99 154.69 146.49 134.74 124.73 MAG 13.56 11.15 9.00 7.29 6.05 5.16 4.49 3.98 3.57 3.24 2.75 2.25 2.02 1.75 1.44 1.23 S21 ANG 145.65 124.63 109.90 100.27 93.07 87.38 82.41 77.92 74.02 70.24 63.22 53.72 47.63 39.20 26.11 14.52 MAG 0.04 0.05 0.07 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.15 0.18 0.20 0.23 0.28 0.33 S12 ANG 65.30 53.73 50.12 49.49 50.25 50.94 51.76 52.62 53.24 53.84 53.97 53.24 52.05 49.60 44.37 38.05 MAG 0.83 0.62 0.47 0.39 0.33 0.29 0.26 0.23 0.21 0.19 0.15 0.18 0.20 0.23 0.28 0.33 S22 ANG -28.08 -42.31 -48.09 -50.66 -51.72 -52.25 -52.80 -53.35 -54.00 -55.03 -58.07 -66.67 -78.75 -110.79 174.41 146.24 BUILT-IN TRANSISTORS Q1 3-pin small mini mold part No. NE68530 Q2 NE85630 ORDERING INFORMATION PART NUMBER UPA835TF-T1 QUANTITY 3000 PACKAGING Tape & Reel The UPA832TF features the Q1 and Q2 in inverted positions. UPA835TF BJT NONLINEAR MODEL PARAMETERS(1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC (1) Gummel-Poon Model Q1 7e-16 109 1 15 0.19 7.9e-13 2.19 1 1.08 12.4 Infinity 0 2 1.3 10 8.34 0.009 10 0.4e-12 0.81 0.5 0.18e-12 0.75 Q2 6e-16 120 0.98 10 0.08 32e-16 1.93 12 0.991 3.9 0.17 0 2 0.38 4.16 3.6 1.96e-4 2 2.8e-12 1.3 0.5 1.1e-12 0.7 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.34 0 0 0.75 0 0.5 2.5e-12 5.2 4.58 0.01 0 1e-9 1.11 0 3 0 1 Q2 0.55 0.3 0 0.75 0 0.5 12e-12 6 10 0.2 0 1e-9 1.11 0 3 0 1 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE =0.5 V to 5 V, IC = 1 mA to 10 mA Date: 11/98 Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. UPA835TF SCHEMATIC 0.07 pF C_C1B2 0.1 pF CCBPKG1 LC Pin_1 0.05 nH 0.09 pF CCB1 LB1 C_C1E1 0.05 pF LE Pin_2 0.05 nH CCE1 0.14 pF LE1 0.7 nH C_E1B2 0.3 pF LE2 CCE2 0.16 pF LC Pin_3 0.05 nH CCB2 0.11 pF 0.85 nH C_B2E2 0.05 pF C_B1B2 0.05 pF LE 0.05 nH Pin_5 LB 0.05 nH Pin_6 Q1 0.45 nH C_E1C2 0.05 pF Q2 LB2 0.1 nH LB 0.05 nH Pin_4 0.1 pF CCEPKG2 0.07 pF CCBPKG2 MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE = 0.5 V to 5 V, IC = 1 mA to 10 mA Date: 11/98 BUILT-IN TRANSISTORS Q1 3-pin small mini mold part No. NE68530 Q2 NE85630 ORDERING INFORMATION PART NUMBER UPA835TF-T1 QUANTITY 3000 PACKAGING Tape & Reel The UPA832TF features the Q1 and Q2 in inverted positions. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -2/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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