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| MSC80917 NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: The ASI MSC80917 is low level Class-C, Common Base Device Designed for IFF, DME driver Applications. PACKAGE STYLE .280 2L FL (B) 2 3 1 FEATURES INCLUDE: * OmnigoldTM Metalization System * POUT 4.0 W Min. * GP = 10 dB MAXIMUM RATINGS IC VCE PDISS TJ TSTG JC 1.0 A 37 V 7.5 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 35 C/W 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICES hFE GP POUT TC = 25 C TEST CONDITIONS IC = 1.0 mA IC = 5.0 mA IE = 1.0 mA VCE = 35 V VCE = 5.0 V VCE = 35 V IC = 100 mA f = 1025 to 1150 MHz DUTY CYCLE = 1.0% MINIMUM TYPICAL MAXIMUM 45 20 3.5 1.0 20 10 4.0 35 120 UNITS V V V mA PIN = 400 mW PULSE WIDTH = 10 S dB W % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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