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MMBT2222
MMBT2222
NPN General Purpose Amplifier
* Sourced from process 19.
C
E B
SOT-23 Mark: 1B
Absolute Maximum Ratings* Ta=25C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Ratings 30 60 5.0 0.6 -55 ~ 150 Units V V V A C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta=25C unless otherwise noted
Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE Parameter Test Condition IC = 10mA, IB = 0 IC = 10A, IE = 0 IE = 10A, IC = 0 VCB = 50V, IE = 0 VCB = 50V, IE = 0, Ta = 125C VEB = 3.0V, IC = 0 IC = 0.1mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V * IC = 150mA, VCE = 1.0V * IC = 500mA, VCE = 10V * IC = 150mA, IB = 15V IC = 500mA, IB = 50V IC = 150mA, IB = 15V IC = 500mA, IB = 50V 35 50 75 100 50 30 Min. 30 60 5.0 10 10 10 Max. Units V V V A A nA Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain
On Characteristics
300
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage
0.4 1.6 1.3 2.6
V V
(c)2004 Fairchild Semiconductor Corporation
Rev. B, May 2004
MMBT2222
Electrical Characteristics (Continued)
Symbol Parameter Small Signal Characteristics fT Cobo Cibo td tr ts tf Curent Gain Bandwidth Product Output Capacitance Input Capacitance Delay Time Rise Time Storage Time Fall Time
Ta=25C unless otherwise noted Test Condition IC = 20mA, VCE = 20V, f = 100MHz VCB = 10V, IE = 0, f = 1MHz VEB = 0.5V, IC = 0, f = 1MHz VCC = 30V, VBE(OFF) = 0.5V, IC = 150mA, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Min. 250 8.0 30 10 25 225 60 pF pF ns ns ns ns Max. Units
Switching Characteristics
* Pulse Test: Pulse Width 300s, Duty Cycle 2.0%
Thermal Characteristics Ta=25C unless otherwise noted
Symbol PD RJA Parameter Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max. 350 2.8 357 Units mW mW/C C/W
* Device mounted on FR-4PCB 1.6" x 1.6" x 0.06".
(c)2004 Fairchild Semiconductor Corporation
Rev. B, May 2004
MMBT2222
Package Dimensions
SOT-23
0.20 MIN 2.40
0.10
0.40 0.03
1.30
0.10
0.45~0.60
0.03~0.10 0.38 REF
0.40 0.03 0.96~1.14 2.90 0.10
0.12 -0.023
+0.05
0.95 0.03 0.95 0.03 1.90 0.03 0.508REF
0.97REF
Dimensions in Millimeters
(c)2004 Fairchild Semiconductor Corporation Rev. B, May 2004
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM
ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM
Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM
Power247TM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM
SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2004 Fairchild Semiconductor Corporation
Rev. I11

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