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PD - 95498A
SMPS MOSFET
Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Enhanced Body Diode dv/dt Capability Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 second Mounting torqe, 6-32 or M3 screw
IRFR3412PbF IRFU3412PBF
HEXFET(R) Power MOSFET
VDSS
100V
RDS(on) max
0.025
ID
48A
D-Pak IRFR3412
I-Pak IRFU3412
Max.
48 34 190 140 0.95 20 6.4 -55 to + 175 300(1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V V/ns C
Diode Characteristics
Symbol IS
ISM
VSD trr Qrr IRRM ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Reverse RecoveryCurrent Forward Turn-On Time
Min. Typ. Max. Units --- --- --- --- 48 A 190
--- --- 1.3 V --- 68 100 ns --- 160 240 nC --- 4.5 6.8 A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 29A, VGS = 0V TJ = 125C, IF = 29A di/dt = 100A/s
D
S
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1
12/03/04
IRFR/U3412PbF
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 --- --- 3.5 --- --- --- --- Typ. --- 0.10 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.025 VGS = 10V, ID = 29A 5.5 V VDS = VGS, ID = 250A 1.0 VDS = 95V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 25 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 59 21 17 19 68 44 37 3430 270 150 1040 170 270 Max. Units Conditions --- S VDS = 50V, ID = 29A 89 ID = 29A 32 nC VDS = 50V 26 VGS = 10V, --- VDD = 50V --- ID = 29A ns --- RG = 6.8 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 80V, = 1.0MHz --- VGS = 0V, VDS = 0V to 80V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
160 29 14
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RJA RJA Notes: Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient
Typ.
--- --- ---
Max.
1.05 50 110
Units
C/W
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 0.38mH, RG = 25,
IAS = 29A, (See Figure 12a)
ISD 29A, di/dt 420A/s, VDD V(BR)DSS,
T J 150C
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
* When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994
2
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IRFR/U3412PbF
1000
TOP
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
TOP
100
I D, Drain-to-Source Current (A)
I D, Drain-to-Source Current (A)
BOTTOM
BOTTOM
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
100
10
1
10
0.1
4.5V
4.5V
0.01 0.1 1
20s PULSE WIDTH T J= 25 C
10 100
20s PULSE WIDTH T J= 175 C
1 0.1 1 10 100
V DS Drain-to-Source Voltage (V) ,
V DS Drain-to-Source Voltage (V) ,
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
I D = 48A
2.5
RDS(on) , Drain-to-Source On Resistance
I D, Drain-to-Source Current (A)
100 T J = 175 C
2.0
10
(Normalized)
1.5
T = 25 C J
1
1.0
0.5
V DS= 25V 20s PULSE WIDTH 0.1 4.0 5.0 6.0 7.0 8.0 9.0
V GS = 10V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
V GS Gate-to-Source Voltage (V) ,
TJ , Junction Temperature
( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFR/U3412PbF
100000 VGS = 0V, f = 1 MHZ C iss = C gs + Cgd , SHORTED Crss = C gd Coss = Cds + Cgd
20
VGS , Gate-to-Source Voltage (V)
C ds
ID= 29A VDS = 80V VDS= 50V VDS= 20V
16
C, Capacitance (pF)
10000
12
Ciss
8
1000
Coss Crss
100 1 10 100
4
0 0 20 40 60 80 100 Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000.0
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100.0
T J = 175C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100sec 10
10.0
1msec 1 Tc = 25C Tj = 175C Single Pulse 1 10 10msec
1.0
T J = 25C VGS = 0V
0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VSD, Source-toDrain Voltage (V)
0.1
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFR/U3412PbF
50
V DS
LIMITED BY PACKAGE
RD
VGS
40
RG VGS
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-VDD
ID , Drain Current (A)
30
20
Fig 10a. Switching Time Test Circuit
10
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
(Z thJC )
1 D = 0.50
Thermal Response
0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 t1/ t 2 +T C 0.1 P DM t1 t2
J = P DM x Z thJC
0.01
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFR/U3412PbF
300
15V
ID TOP
250
12A 21A 29A
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
DRIVER
200
BOTTOM
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
150
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
100
50
0 25 50 75 100 125 150 175
Starting T , Junction Temperature J
( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VGS
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFR/U3412PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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IRFR/U3412PbF
D-Pak (TO-252AA) Package Outline
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRF R120 WIT H AS S EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN THE ASS EMBLY LINE "A" Note: "P" in as s embly line position indicates "Lead-F ree" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO
IRFU120 12 916A 34
ASS EMBLY LOT CODE
DATE CODE YEAR 9 = 1999 WEEK 16 LINE A
OR
PART NUMBER INT ERNATIONAL RECTIF IER LOGO
IRFU120 12 34
DAT E CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = AS SEMBLY SIT E CODE
AS SEMBLY LOT CODE
8
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IRFR/U3412PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: THIS IS AN IRF U120 WITH ASSEMBLY LOT CODE 5678 ASSEMBLED ON WW 19, 1999 IN THE ASSEMBLY LINE "A" Note: "P" in as s embly line pos ition indicates "Lead-Free" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO
IRFU120 919A 56 78
ASSEMBLY LOT CODE
DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A
OR
PART NUMBE R INT ERNAT IONAL RECTIF IER LOGO
IRFU120 56 78
AS SEMBLY LOT CODE
DATE CODE P = DES IGNAT ES LEAD-F REE PRODUCT (OPTIONAL) YEAR 9 = 1999 WE EK 19 A = ASS EMBLY SIT E CODE
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IRFR/U3412PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04
10
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