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PD 2.506
PRELIMINARY
HFA50HF20
Ultrafast, Soft Recovery Diode
CATHODE
HEXFRED
Features
* * * * *
TM
VR = 200V V F = 0.96V Qrr * = 640nC di(rec)M/dt * = 980A/s * 125C
Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount
ANODE ANODE
Description
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
TM
SMD -1
Absolute Maximum Ratings (per Leg)
Parameter
VR I F @ TC = 100C I FSM @ TC = 25C PD @ TC = 25C TJ TSTG D.C. Reverse Voltage Continuous Forward Current Single Pulse Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
Max.
200 50 600 125 -55 to +150
Units
V A W C
Thermal - Mechanical Characteristics
Parameter
RJC Wt Junction-to-Case, Single Leg Conducting Weight
Typ.
-- 2.6
Max.
1.0 --
Units
C/W g
Note: D.C. = 50% rect. wave 1/2 sine wave, 60 Hz , P.W. = 8.33 ms
4/7/97
HFA50HF20
Electrical Characteristics (per Leg) @ TJ = 25C (unless otherwise specified)
Parameter
VBR VFM Cathode Anode Breakdown Voltage Max Forward Voltage
Min. Typ. Max. Units
200 -- -- -- 0.88 0.96 0.98 1.11 0.75 0.84 -- 10 -- 1.0 170 310 2.8 -- V V A mA pF nH
Test Conditions
I R = 100A I F = 50A See Fig. 1 I F = 100A I F = 50A, TJ = 125C VR = VR Rated See Fig. 2 TJ = 125C, VR = 160V VR = 200V See Fig. 3 Measured from center of bond pad to end of anode bonding wire
I RM CT LS
Max Reverse Leakage Current Junction Capacitance Series Inductance
-- -- -- --
Dynamic Recovery Characteristics (per Leg) @ TJ = 25C (unless otherwise specified)
Parameter
trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Reverse Recovery Time
Min. Typ. Max. Units
-- -- -- -- -- -- -- -- -- 35 -- 62 93 ns 98 150 10 18 A 14 26 260 390 nC 640 960 600 900 A/s 980 1500
Test Conditions
IF = 1.0A, dif /dt = 200A/s, VR = 30V TJ = 25C See Fig. TJ = 125C 5 IF = 50A TJ = 25C See Fig. TJ = 125C 6 VR = 200V TJ = 25C See Fig. TJ = 125C 7 dif/dt = 200A/s TJ = 25C See Fig. TJ = 125C 8
Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb
Lead Assignments : 1 - Cathode 2, 3 - Anode
IR Case Style SMD-1 Dimensions in millimeters and (inches)
HFA50HF20
1000 1000
Reverse Current - IR (A)
100 10 1 0.1 0.01 0.001 0
TJ = 150C TJ = 125C TJ = 100C TJ = 75C TJ = 50C T J = 25C
A 40 80 120 160 200
F
(A)
100
TJ = 150C TJ = 125C TJ = 25C
Instantaneous Forward Current - I
Reverse Voltage - VR ( V )
10
10000
Fig. 2 - Typical Reverse Current vs. Reverse Voltage A
Junction Capacitance - CT (pF)
TJ = 25C
1000
1 0.0 0.4 0.8 1.2 1.6 2.0
Forward Voltage Drop - V
(V) FM
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
100 1 10 100
A 1000
Reverse Voltage - VR ( V )
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
(K/W) thJC ( K/W ) thJC
1
D D D D
0.1
= = = =
0.50 0.33 0.25 0.17
PDM
Thermal Impedance - Z
D = 0.08
t
1
0.01
Single Pulse (Thermal Resistance)
t 2 N o tes : 1 . D u ty fa cto r D = t / t 12 2. P eak T = P xZ +T J DM th JC C
0.001 0.01 0.1 1
0.001 0.00001
0.0001
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
t 1, Rectangular Pulse Duration (Seconds)
HFA50HF20
110 100
V R = 200V T J = 125C T J = 25C
100
IF = 100A I F = 50A
90
I F = 25A I F = 100A IF = 50A
I IRRM- (A)
t rr - (ns)
80
10
IF = 25A
70
60
50 100
A
V R = 200V T J = 125C T J = 25C
1 100 1000
A
di f /dt - (A/s)
1000
di f/dt - (A/s)
Fig. 5 - Typical Reverse Recovery vs. dif/dt,
Fig. 6 - Typical Recovery Current vs. dif/dt,
3000
10000
V R = 200V T J = 125C T J = 25C
V R = 200V T J = 125C T J = 25C
I F = 25A I F = 50A
IF = 100A
2000
Q rr - (nC)
I F = 50A
di(rec)M/dt - (A/s)
I F = 100A
1000
I F = 25A
1000
0 100
di f/dt - (A/s)
1000
100 100
A 1000
di f /dt - (A/s)
Fig. 7 - Typical Stored Charge vs. dif/dt
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
HFA50HF20
3
IF
trr ta tb
4
R E VER SE R EC O VER Y C IR C U IT
V R = 20 0 V
0 Q rr I RRM
2
0 .5 I R R M di(r ec) M/dt 0.75 I R R M
5
0 .0 1 L = 70H D .U.T. D G IR F P 2 5 0 S
1
d i f /dt
4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr
d if /d t A DJU S T
1. dif /dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 4/97

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