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FDW2508PB Dual P-Channel -1.8V Specified PowerTrench(R) MOSFET October 2006 FDW2508PB Dual P-Channel -1.8V Specified PowerTrench(R) MOSFET -12V, -6A, 18m Features General Description This P-Channel -1.8V specified MOSFET uses Fairchild Semiconductor's advanced low voltage PowerTrench(R). It has been optimized for battery power management applications. Max rDS(on) = 18m at VGS = -4.5V, ID = -6A Max rDS(on) = 22m at VGS = -2.5V, ID = -5A Max rDS(on) = 30m at VGS = -1.8V, ID = -4A Low gate charge High performance trench technology for extremely low rDS(on) Low profile TSSOP-8 package RoHS compliant Application Power management Load switch Battery protection TSSOP8 Pin 1 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation-Dual Operation Power Dissipation-Single Operation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Parameter Ratings -12 8 -6 -30 2 1.6 1 -55 to +150 C W Units V V A Thermal Characteristics RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 80 125 C/W Package Marking and Ordering Information Device Marking 2508PB Device FDW2508PB Package TSSOP-8 Reel Size 13'' Tape Width 12mm Quantity 2500 units (c)2006 Fairchild Semiconductor Corporation FDW2508PB Rev.B 1 www.fairchildsemi.com FDW2508PB Dual P-Channel -1.8V Specified PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -10V VGS = 0V TJ = 125C VGS = 8V, VDS = 0V -12 -12 -1 -100 100 V mV/C A nA On Characteristics (Note 2) VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -4.5V, ID = -6A Static Drain to Source On-Resistance VGS = -2.5V, ID = -5A VGS = -1.8V, ID = -4A VGS = -4.5V, ID = -6A,TJ = 125C Forward Transconductance VDS = -5V, ID = -6A -0.4 -0.6 3 15 18 22 23 35 18 22 30 30 S m -1.5 V mV/C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -6V, VGS = 0V, f = 1MHz 2835 440 370 3775 590 555 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = -4.5V ,VDD = -6V ID = -6A VDD = -6V, ID = -6A VGS = -4.5V, RGEN = 6 8 16 254 106 32 4.3 7.1 16 29 407 170 45 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -1.1A (Note 2) -0.6 106 110 -1.2 159 165 V ns nC IF = -6A, di/dt = 100A/s Notes: 1: RJA is the sum of junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as solder mounting surface of the drian pins. RJC is guaranteed by design while RCA is determined by the user's board design. a. RJA is 80C/W(steady state) when mounted on a 1 in2 pad of 2 oz copper. b.RJA is 125C/W(steady state) when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDW2508PB Rev.B 2 www.fairchildsemi.com FDW2508PB Dual P-Channel -1.8V Specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 30 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4.5 VGS = -4.5V VGS = -2.5V VGS = -1.8V VGS = -1.5V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) 24 18 12 6 0 0.0 VGS = -1.5V VGS = -4.5V VGS = -1.8V VGS = -2.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 0.5 1.0 1.5 2.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 10 15 20 -ID, DRAIN CURRENT(A) 25 30 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 40 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) ID = -6A NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID = -6A VGS = -4.5V 35 30 25 20 15 10 1.5 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX TJ = 150oC TJ = 25oC -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 150 3.0 4.5 6.0 -VGS, GATE TO SOURCE VOLTAGE (V) 7.5 Figure 3. Normalized On Resistance vs Junction Temperature 30 -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 40 VGS = 0V -ID, DRAIN CURRENT (A) 25 20 15 10 5 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 10 TJ = 150oC 1 TJ = 25oC TJ = 150oC TJ = 25oC TJ = -55oC TJ = -55oC 0.1 0 0.5 1.0 1.5 -VGS, GATE TO SOURCE VOLTAGE (V) 2.0 0.01 0.2 0.4 0.6 0.8 1.0 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDW2508PB Rev.B 3 www.fairchildsemi.com FDW2508PB Dual P-Channel -1.8V Specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 4.5 4.0 CAPACITANCE (pF) 10 4 Ciss 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 5 10 15 20 25 Qg, GATE CHARGE(nC) 30 35 VDD = -8V VDD = -4V VDD = -6V 10 3 Coss Crss f = 1MHz VGS = 0V 10 0.1 2 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage P(PK), PEAK TRANSIENT POWER (W) 100 -ID, DRAIN CURRENT (A) 200 100 VGS = -8V TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - T A ----------------------125 10 1 0.1 0.01 1E-3 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TA = 25OC 1ms 10ms 100ms 1s DC 10 SINGLE PULSE 1 10 30 1 -3 10 10 -2 -VDS, DRAIN to SOURCE VOLTAGE (V) 10 10 10 t, PULSE WIDTH (s) -1 0 1 10 2 10 3 Figure 9. Forward Bias Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 0.01 SINGLE PULSE t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 1E-3 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 11. Transient Thermal Response Curve www.fairchildsemi.com FDW2508PB Rev.B 4 FDW2508PB Dual P-Channel -1.8V Specified PowerTrench(R) MOSFET FDW2508PB Rev.B 5 www.fairchildsemi.com FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I22 |
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