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FDW2501NZ October 2002 FDW2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). Features * 5.5 A, 20 V. RDS(ON) = 18 m @ VGS = 4.5V RDS(ON) = 25 m @ VGS = 2.5V * Extended VGSS range (12V) for battery applications * ESD protection diode (note 3) * High performance trench technology for extremely low RDS(ON) * Low profile TSSOP-8 package Applications * Load switch * Motor drive * DC/DC conversion * Power management 1 2 3 4 8 7 6 5 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 20 12 (Note 1a) Units V V A W C 5.5 30 1.0 0.6 -55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 100 125 C/W Package Marking and Ordering Information Device Marking 2501NZ 2002 Fairchild Semiconductor Corporation Device FDW2501NZ Reel Size 13'' Tape width 12mm Quantity 3000 units FDW2501NZ Rev E1 (W) FDW2501NZ Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 12 V, VGS = -12 V, VGS = 0 V VDS = 0 V VDS = 0 V Min 20 Typ Max Units V Off Characteristics 14 1 10 -10 mV/C A A A On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 5.5 A ID = 5 A VGS = 2.5 V, VGS = 4.5 V, ID = 5.5 A, TJ=125C VGS = 4.5 V, VDS = 5 V, VDS = 5 V ID = 5.5 A 0.6 1.0 -3 14 19 19 1.5 V mV/C 18 25 29 m ID(on) gFS 30 30 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 10 V, f = 1.0 MHz V GS = 0 V, 1286 305 161 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 10 14 25 8 20 25 40 16 17 ns ns ns ns nC nC nC VDS = 10 V, VGS = 4.5 V ID = 5.5 A, 12 2.6 3 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.0 A Voltage (Note 2) 0.7 1.0 1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) b) RJA is 100C/W (steady state) when mounted on a 1 inch copper pad on FR-4. RJA is 125C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDW2501NZ Rev E1 (W) FDW2501NZ Typical Characteristics 60 VGS = 4.5V 50 ID, DRAIN CURRENT (A) 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.0V 1.8 1.6 VGS = 2.5V 1.4 3.0V 1.2 3.5V 4.0V 1 4.5V 40 2.5V 30 20 2.0V 10 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.8 0 10 20 30 40 50 60 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.05 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 5.5A VGS = 4.5V 1.4 ID = 2.8A 0.04 1.2 0.03 1 TA = 125oC 0.8 0.02 TA = 25oC 0.6 -50 -25 0 25 50 75 100 o 0.01 125 150 175 1 2 3 4 5 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 40 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = 5V ID, DRAIN CURRENT (A) 30 TA = -55oC 125oC 25oC IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125oC 20 25oC -55oC 10 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW2501NZ Rev E1 (W) FDW2501NZ Typical Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) 2000 ID = 5.5 A VDS = 5V 10V 15V CAPACITANCE (pF) 1600 CISS 1200 f = 1 MHz VGS = 0 V 4 3 2 800 1 400 COSS CRSS 0 0 2 4 6 8 10 12 14 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 10ms 1 DC 0.1 VGS = 4.5V SINGLE PULSE RJA = 125 C/W TA = 25 C 0.01 0.1 1 10 o o 100s 1ms 100ms 1s 40 SINGLE PULSE RJA = 125C/W TA = 25C 30 20 10 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0. RJA(t) = r(t) * RJA RJA = 125 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 o 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW2501NZ Rev E1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I1 |
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