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| FDS6692A N-Channel PowerTrench(R) MOSFET December 2005 FDS6692A N-Channel PowerTrench(R) MOSFET 30V, 9A, 11.5m Features RDS(ON) = 11.5m, VGS = 10V, ID = 9A RDS(ON) = 14.5m, VGS = 4.5V, ID = 8.2A High performance trench technology for extremely low RDS(ON) Low gate charge High power and current handling capability RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications DC/DC converters D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 (c)2005 Fairchild Semiconductor Corporation FDS6692A Rev. A1 1 www.fairchildsemi.com FDS6692A N-Channel PowerTrench(R) MOSFET MOSFET Maximum Ratings Symbol VDSS VGS ID EAS PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current TA = 25C unless otherwise noted Ratings 30 20 9 8.2 48 240 1.47 -55 to 150 Units V V A A A mJ W o Parameter Continuous (TA = 25oC, VGS = 10V, RJA = 85oC/W) Continuous (TA = 25 C, VGS = 4.5V, RJA = 85 C/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Operating and Storage Temperature o o C Thermal Characteristics RJA RJA Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 50 85 o o C/W C/W Package Marking and Ordering Information Device Marking FDS6692A Device FDS6692A Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, Referenced to 25oC VDS = 24V VGS = 0V VGS = 20V TJ = 150oC 30 21 1 250 100 V mV/oC A nA On Characteristics VGS(TH) VGS(TH) TJ RDS(ON) Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance VGS = VDS, ID = 250A ID = 250A, Referenced to 25oC ID = 9A, VGS = 10V ID = 8.2A, VGS = 4.5V ID = 9A, VGS = 10V, TJ = 150oC 1.2 -5 8.2 11 13 2.5 11.5 14.5 19 m V mV/oC Dynamic Characteristics CISS COSS CRSS RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge 2 FDS6692A Rev. A1 VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 15V ID = 9A Ig = 1.0mA - 1210 330 138 2.0 22 12 0.93 3 2.1 4.8 1610 440 210 29 16 1.2 - pF pF pF nC nC nC nC nC nC www.fairchildsemi.com FDS6692A N-Channel PowerTrench(R) MOSFET Switching Characteristics (VGS = 10V) tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 15V, ID = 9A VGS = 10V, RGS = 6.2 8 32 33 13 60 69 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 9A ISD = 2.1A ISD = 9A, dISD/dt=100A/s ISD = 9A, dISD/dt=100A/s 1.25 1.0 27 17 V V ns nC Notes: 1: Starting TJ = 25C, L = 9.2mH, IAS = 7.2A, VDD = 30V, VGS = 10V. 2: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. 3: RJA is measured with 1.0 in2 copper on FR-4 board 3 FDS6692A Rev. A1 www.fairchildsemi.com FDS6692A N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 24 2.8 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX RDS(ON), NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 21 18 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 6 12 3.0V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 15 12 9 6 3 0 0 0.1 0.2 WAVEFORMS IN DESCENDING ORDER: 4.5V 3.5V 4.0V 10V 5.0V 4.0V 3.5V 3.0V 0.3 0.4 0.5 5.0V 10V 20 24 VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.02 1.6 RDS(ON), NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 9A VGS =10V ID =9A RDS(ON), ON-RESISTANCE (OHM) 0.018 0.016 0.014 0.012 TJ =25oC 0.01 0.008 1.4 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.2 TJ =150oC 1.0 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 0.8 0.6 - 80 0.006 - 40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 160 2 4 8 6 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On Resistance Variation with Temperature 24 21 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX IS = 9A 10 ID, DRAIN CURRENT (A) 18 15 12 9 6 3 0 0 VDS = 6V TJ = 25oC IS, REVERSE CURRENT (A) 1 TJ = 150oC TJ = 150oC TJ = -55oC 0.1 TJ = 25oC TJ = - 55oC 0.01 1 2 3 4 0.001 0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.6 0.8 1.0 0.4 VSD, BODY DIODE FORWARD VOLTAGE 1.2 Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation With Source Current and Temperature 4 FDS6692A Rev. A1 www.fairchildsemi.com FDS6692A N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 10 VDD =15V VGS, GATE- SOURCE VOLTAGE 8 2000 CISS 1000 COSS CAPACITANCE (pF) 6 4 WAVEFORMS IN DESCENDING ORDER: ID = 9A ID = 1A CRSS f = 1MHz VGS = 0V 2 0 0 5 10 15 20 25 Qg, GATE CHARGE (nC) 100 0.03 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] Figure 8. Capacitance Characteristics 100 IAS, AVALANCHE CURRENT (A) 10 STARTING TJ =25 C o ID, DRAIN TCURRENT (A) 10 1 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) SINGLE PULSE TJ = MAX RATED TA = 25oC 100s 1ms 10ms DC STARTING TJ =150 C o 0.1 1 0.01 .01 1 10 100 1000 0.01 0.1 tAV, TIME IN AVALANCHE(ms) 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 9. Unclamped Inductive Switching Capability 10 9 CURRENT LIMITED BY PACKAGE Figure 10. Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 2000 1000 SINGLE PULSE o RJA = 85 C/W 100 TA = 25 C ID, DRAIN TCURRENT (A) 8 7 6 5 4 3 2 1 0 0 VGS = 10V o VGS = 4.5V 10 RJA = 85oC/W 50 75 100 125 150 TA, AMBIENT TEMPERATURE (oC) 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, PULSE WIDTH (s) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature Figure 12. Single Maximum Power Dissipation 5 FDS6692A Rev. A1 www.fairchildsemi.com FDS6692A N-Channel PowerTrench(R) MOSFET 2 1 Normalized Thermal impedance ZJA 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x RJA + TC -2 -1 0 1 2 3 1E-3 -5 10 10 -4 10 -3 10 10 10 10 10 10 t Rectangular Pulse Duration Figure 13. Transient Thermal Response Curve 6 FDS6692A Rev. A1 www.fairchildsemi.com FDS6692A N-Channel PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I17 7 FDS6692A Rev. A1 www.fairchildsemi.com |
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