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| PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 14 x 14 MILS 7.1 MILS 9.0 x 9.0 MILS Al - 30,000A Au - 12,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 62,250 PRINCIPAL DEVICE TYPES CMPSH-3 Series CMSSH-3 Series CMXSH-3 CMKSH-3T BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (13- February 2006) PROCESS CPD48V Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (13- February 2006) |
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