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MITSUBISHI IGBT MODULES
CM400DU-24F
HIGH POWER SWITCHING USE
CM400DU-24F
G IC ................................................................... 400A G VCES.......................................................... 1200V G Insulated
Type G 2-elements in a pack
APPLICATION General purpose inverters & Servo controlers, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
140 130 110 0.25 36 43.8 10 13.8 11.5
10 9
G2
20.4
E2
(26)
(26)
(26)
Tc measured point
110 0.25 130
(15)
C2E1
20
(15)
E1
3-M8 NUTS
65
4-M4 NUTS
G1
14.5
40
E2
C1
14.5
Tc measured point
4-6.5MOUNTING
RTC
24.5 -0.5
35 -0.5
+1
+1
C2E1
E2
RTC
C1
G1 E1
8
CIRCUIT DIAGRAM
Sep. 2001
E2 G2
HOLES
MITSUBISHI IGBT MODULES
CM400DU-24F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25C)
Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25C Pulse TC = 25C Pulse TC = 25C Conditions Ratings 1200 20 400 800 400 800 1100 -40 ~ +150 -40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 Unit V V A A A A W C C V N*m g
(Note 2) (Note 2)
Main terminal to base plate, AC 1 min. Main Terminal M8 Mounting holes M6 G(E) Terminal M4 Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25C)
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 40mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 400A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 600V, IC = 400A, VGE = 15V VCC = 600V, IC = 400A VGE1 = VGE2 = 15V RG = 3.1, Inductive load switching operation IE = 400A IE = 400A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound applied*2 (1/2 module) Tc measured point is just under the chips Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 3.1 Limits Typ. -- 6 -- 1.8 1.9 -- -- -- 4400 -- -- -- -- -- 23.6 -- -- -- 0.010 -- -- Max. 2 7 80 2.4 -- 160 6.8 4.0 -- 450 200 1000 300 550 -- 3.2 0.11 0.13 -- 0.045*3 15 Unit mA V A V nF nF nF nC ns ns ns ns ns C V C/W C/W C/W C/W
Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". *3 : If you use this value, Rth(f-a) should be measured just under the chips.
Sep. 2001
MITSUBISHI IGBT MODULES
CM400DU-24F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) Tj=25C 15 VGE=20V 600 500 400 8.5 300 200 100 0 0 0.5 1 1.5 2 2.5 3 3.5 4 8 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
800
COLLECTOR CURRENT IC (A)
700
9.5 11 10 9
3 VGE = 15V 2.5 2 1.5 1 0.5 0 Tj = 25C Tj = 125C 0 200 400 600 800
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103
7 5 3 2
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5
Tj = 25C
Tj = 25C
4
3 IC = 800A 2 IC = 400A IC = 160A 1
EMITTER CURRENT IE (A)
102
7 5 3 2
0
6
8
10
12
14
16
18
20
101
0
0.5
1
1.5
2
2.5
3
3.5
4
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 103 104
7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
CAPACITANCE Cies, Coes, Cres (nF)
7 5
SWITCHING TIMES (ns)
3 2
102
7 5 3 2
Cies
103
td(off) tf td(on)
102 tr Conditions: VCC = 600V VGE = 15V RG = 3.1 Tj = 125C Inductive load
5 7 102 2 3 5 7 103
101
7 5 3 2
101
Coes VGE = 0V Cres
100 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V)
100 1 10
2
3
COLLECTOR CURRENT IC (A)
Sep. 2001
MITSUBISHI IGBT MODULES
CM400DU-24F
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (C/W) 103
7 5 3 2 Conditions: VCC = 600V VGE = 15V RG = 3.1 Tj = 25C Inductive load
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10-5 2 3 5 710-4 2 3 5 710-3 2 3 5 710-2 2 3 5 7 10-1 100 7 IGBT part: 5 Per unit base = Rth(j-c) = 0.11C/W 3 FWDi part: 2 Per unit base = Rth(j-c) = 0.13C/W 10-1
7 5 3 2 7 5 3 2 3 2
102 1
7 5 3 2
trr Irr
10-2 Single Pulse TC = 25C
100
7 5 3 2
101 1 10
2
3
5 7 102
2
3
5 7 103
10-3
10-1 2 3 5 7 100 2 3 5 7 101 TMIE (s)
EMITTER CURRENT IE (A)
GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 1000 2000 3000 4000 5000 6000 GATE CHARGE QG (nC) IC = 400A VCC = 400V VCC = 600V
Sep. 2001

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