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APT50M60JVR
500V 63A 0.060
S D
POWER MOS V(R) MOSFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
S G
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
* Popular SOT-227 Package * Faster Switching * Lower Leakage
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
* Avalanche Energy Rated
G
D
S
All Ratings: TC = 25C unless otherwise specified.
APT50M60JVR UNIT Volts Amps
500 63 252 30 40 568 4.55 -55 to 150 300 63 50
4 1
Continuous Drain Current @ TC = 25C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
500 0.060 25 250 100 2 4
(VGS = 10V, ID = 31.5A)
Ohms A nA Volts
5-2004 050-7250 Rev A
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT50M60JVR
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 63A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 63A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V ID = 63A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 333V, VGS = 15V ID = 63A, RG = 5
MIN
TYP
MAX
UNIT
10600 1800 795 560 70 285 20 25 80 10 1235 2820 1700 2900 J ns
nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns C V/ns
63 252 1.3 680 17 8
(Body Diode) (VGS = 0V, IS = -63A)
Reverse Recovery Time (IS = -63A, dl S/dt = 100A/s) Reverse Recovery Charge (IS = -63A, dl S/dt = 100A/s) Peak Diode Recovery
dv/ dt 5
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.22 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.25
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 1.61mH, RG = 25, Peak IL = 63A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID63A di/dt 700A/s VR 500V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
0.9
0.15
0.7
0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE 10-3 10-2 10-1
5-2004
Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
050-7250 Rev A
Z
JC
1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
Junction temp. (C) RC MODEL
200 180 160 140 120 100 80 60 40 20 0
APT50M60JVR
VGS =15 & 10V 8V
0.0516
0.0260F
7.5V 7V
Power (watts)
0.149
0.448F
6.5V 6V 5.5V
0.0198 Case temperature. (C)
42.3F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
140
ID, DRAIN CURRENT (AMPERES)
120 100 80 60 40 20 0
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
NORMALIZED TO = 10V @ 31.5A
1.30 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80
TJ = -55C TJ = +25C TJ = +125C
0 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
70 60 50 40 30 20 10
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15 1.10 1.05 1.00 0.95 0.90 0.85
20 40 60 80 100 120 140 160 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I
D
25
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
= 31.5A
V
GS
= 10V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7250 Rev A
5-2004
252
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000
C, CAPACITANCE (pF)
APT50M60JVR
Ciss
100 50 100S
Coss 1,000 Crss
10 5 TC =+25C TJ =+150C SINGLE PULSE
1mS 10mS
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
= 63A
IDR, REVERSE DRAIN CURRENT (AMPERES)
1 10 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16
1
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 TJ =+150C
100
12
VDS = 100V
8
VDS = 250V
TJ =+25C 10
4
VDS = 400V
100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 700 600 500 400 300 200
0 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 250
V
DD G
1
= 333V
R
= 5
td(off)
V
DD G
200
T = 125C
J
L = 100H
td(on) and td(off) (ns)
tf
= 333V
R
= 5
T = 125C
J
L = 100H
tr and tf (ns)
150
100
50 100 0 10 td(on) 70 90 110 130 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
DD G
tr
30
50
70 90 110 130 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 25,000
V I
DD
0 10
30
50
7,000 6,000
SWITCHING ENERGY (J)
V
= 333V
= 333V
R
= 5
D J
= 63A
T = 125C
J
5,000 4,000 3,000 2,000 1,000
L = 100H EON includes diode reverse recovery.
SWITCHING ENERGY (J)
20,000
T = 125C L = 100H EON includes diode reverse recovery.
Eoff
15,000
10,000 Eon
5-2004
Eoff Eon
5,000
050-7250 Rev A
70 90 110 130 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0 10
30
50
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
Typical Performance Curves
APT50M60JVR
10%
Gate Voltage TJ125C
90%
Gate Voltage
td(on)
90% Drain Current
td(off)
90% Drain Voltage
T 125C J
tr
5% 10% Switching Energy Drain Voltage Switching Energy
tf
10% 0 Drain Current
5%
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DF60
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7250 Rev A
5-2004
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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