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| APT20GF120BR APT20GF120BR 1200V 32A Fast IGBT TO-247 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. * Low Forward Voltage Drop * Low Tail Current * Avalanche Rated MAXIMUM RATINGS Symbol VCES VCGR VGE I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage * High Freq. Switching to 20KHz * Ultra Low Leakage Current * RBSOA and SCSOA Rated G C E C G E All Ratings: TC = 25C unless otherwise specified. APT20GF120BR UNIT 1200 1200 20 32 20 64 40 22 200 -55 to 150 300 C mJ Watts Amps Volts Collector-Gate Voltage (RGE = 20KW) Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 90C Pulsed Collector Current 1 @ TC = 25C RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125C Single Pulse Avalanche Energy Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 2 STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.8mA) Gate Threshold Voltage (VCE = VGE, I C = 350A, Tj = 25C) MIN TYP MAX UNIT 1200 4.5 5.5 2.7 3.3 6.5 3.2 3.9 0.8 5.0 100 052-6214 Rev B 11-2000 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V) I CES I GES mA nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA EUROPE 405 S.W. Columbia Street Chemin de Magret Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT20GF120BR Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES I C = I C2 Resistive Switching (25C) VGE = 15V VCC = 0.5VCES I C = I C2 RG = 10W MIN TYP MAX UNIT 1050 100 63 95 13 62 15 67 92 93 17 1210 150 110 140 20 90 30 130 140 190 34 60 160 140 3.0 3.0 5.0 30 70 140 140 5.0 mJ S ns mJ ns ns nC pF Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W TJ = +150C 30 105 71 1.3 1.5 2.7 Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W TJ = +25C VCE = 20V, I C = I C2 17 35 93 70 2.4 12 THERMAL AND MECHANICAL CHARACTERISTICS Symbol RQJC RQJA WT Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.63 40 0.22 oz gm Package Weight 6.1 10 lb*in N*m Torque 052-6214 Rev B 11-2000 Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw) 1.1 1 2 3 Repetitive Rating: Pulse width limited by maximum junction temperature. IC = IC2, RGE = 25W, L = 110H, Tj = 25C See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. APT20GF120BR 50 IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES) 50 VGE=17 & 15V 13V VGE=17 & 15V 13V 40 40 30 11V 20 30 11V 20 10 9V 7V 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1, Typical Output Characteristics (TJ = 25C) 0 60 10 9V 7V 0 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 2, Typical Output Characteristics (TJ = 150C) 100 IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES) 250Sec. Pulse Test VGE = 15V 50 40 TC=-55C TC=+25C TC=+150C OPERATION LIMITED BY VCE (SAT) 30 100S 10 5 TC =+25C TJ =+150C SINGLE PULSE 1 1 5 10 50 100 1200 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 4, Maximum Forward Safe Operating Area 1mS 20 10 0 0 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 3, Typical Output Characteristics @ VGE = 15V VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) 10mS 2,000 1,000 Cies C, CAPACITANCE (pF) 20 IC = IC2 TJ = +25C 16 VCE=240V VCE=600V 8 500 f = 1MHz 12 Coes 100 50 Cres 4 10 0.01 0.1 1.0 10 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage 1.0 ZqJC, THERMAL IMPEDANCE (C/W) 40 80 120 160 Qg, TOTAL GATE CHARGE (nC) Figure 6, Gate Charges vs Gate-To-Emitter Voltage 0 0 0.5 D=0.5 0.2 0.1 0.05 0.1 0.05 0.02 Note: PDM 0.01 0.005 t2 SINGLE PULSE 0.001 -5 10 10-4 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 052-6214 Rev B 11-2000 0.01 t1 APT20GF120BR 5.0 IC, COLLECTOR CURRENT (AMPERES) VCE(SAT), COLLECTOR-TO-EMITTER SATURATION VOLTAGE (VOLTS) 40 4.0 IC1 30 2.0 IC2 20 1.5 0.5 IC2 10 BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) 1.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature 1.2 SWITCHING ENERGY LOSSES (mJ) 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 9, Maximum Collector Current vs Case Temperature 5.0 VCC = 0.66 VCES VGE = +15V TJ = +25C IC = IC2 0 25 1.1 4.0 Eoff 3.0 1 0.9 2.0 Eon 1.0 0.8 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 10, Breakdown Voltage vs Junction Temperature 10 0.7 -50 20 40 60 80 100 RG, GATE RESISTANCE (OHMS) Figure 11, Typical Switching Energy Losses vs Gate Resistance 1.6 SWITCHING ENERGY LOSSES (mJ) VCC = 0.66 VCES VGE = +15V TJ = +125C RG = 10 W 0 0 TOTAL SWITCHING ENERGY LOSSES (mJ) IC1 IC2 1 0.5 IC2 1.2 Eoff 0.8 0.4 Eon VCC = 0.66 VCES VGE = +15V RG = 10 W 0.1 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 12, Typical Switching Energy Losses vs. Junction Temperature 100 IC, COLLECTOR CURRENT (AMPERES) 4 8 12 16 20 IC, COLLECTOR CURRENT (AMPERES) Figure 13, Typical Switching Energy Losses vs Collector Current For Both: Duty Cycle = 50% TJ = +125C Tsink = +90C Gate drive as specified Power dissapation = 56W ILOAD = IRMS of fundamental 0 0 10 052-6214 Rev B 11-2000 1 0.1 1.0 10 F, FREQUENCY (KHz) Figure 14,Typical Load Current vs Frequency 100 1000 APT20GF120BR VCHARGE *DRIVER SAME TYPE AS D.U.T. VCC = 0.66 VCES Ets = E on + E off 90% B 10% t d (on) VC 90% D.U.T. VCE (SAT) 10% tf E on t=2uS E off IC t d(off) 90% A DRIVER* D.U.T. IC 100uH V CLAMP RG A VC B A VC IC 10% tr Figure 15, Switching Loss Test Circuit and Waveforms 2 VCE(off) 90% VGE(on) V CC RL = 2 .5 VCES I C2 D.U.T. 10% 1 VGE(off) t d (on) tr t d(off) tf From Gate Drive Circuitry RG VCE(on) 1 Figure 16, Resistive Switching Time Test Circuit and Waveforms T0-247 Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Collector 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 052-6214 Rev B 11-2000 Gate Collector Emitter |
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