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| AP03N70I-H Pb Free Plating Product Advanced Power Electronics Corp. Repetitive Avalanche Rated Fast Switching Speed Simple Drive Requirement RoHS Compliant N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 700V 4.4[ 2.5A G S Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220CFM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast G D switching,ruggedized design and cost-effectiveness. S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25J ID@TC=100J IDM PD@TC=25J EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 700 30 2.5 1.6 8 29 0.23 2 Units V V A A A W W/J mJ A J J Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 32 2.5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.3 65 Units J /W J /W Data & specifications subject to change without notice 200417062-1/4 AP03N70I-H Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS GB VDSS/G Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 700 2 - Typ. 0.6 2 12 3 4 8.5 6 19 8 590 50 6 Max. Units 4.4 4 10 100 100 20 950 V V/J [ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25J , ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=1.6A VDS=VGS, ID=250uA VDS=10V, ID=1.6A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=30V ID=1A VDS=480V VGS=10V VDD=300V ID=2.5A RG=10[, VGS=10V RD=120[ VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol VSD trr Qrr Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=15mH , RG=25[ 3.Pulse width <300us , duty cycle <2%. , IAS=3A. Parameter Forward On Voltage 3 2 Test Conditions IS=3A, VGS=0V IS=3A, VGS=0V, dI/dt=100A/s Min. - Typ. 407 2110 Max. Units 1.5 V ns nC Reverse Recovery Time Reverse Recovery Charge 2/4 AP03N70I-H 4 3 T C =25 C 3 o 10V 6.0V 2 T C =150 C o 10V 5.0V ID , Drain Current (A) ID , Drain Current (A) 2 4.5V 2 5.0V 1 1 4.0V 1 4.5V V G =4.0V 0 V G =3.5V 0 0 5 10 15 20 25 0 5 10 15 20 25 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 3.0 I D =1.6A V G =10V Normalized BVDSS (V) 1.1 Normalized RDS(ON) 2.0 1.0 1.0 0.9 0.8 -50 0 50 100 150 0.0 -50 0 50 100 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction Temperature 100 5 Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 4 VGS(th) (V) 1.3 T j = 150 o C IS (A) 1 T j = 25 o C 3 0.1 2 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP03N70I-H 16 10000 f=1.0MHz VGS , Gate to Source Voltage (V) ID =1A VDS =480V 12 C iss C (pF) 8 100 C oss 4 C rss 0 0 4 8 12 16 1 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 1 Duty factor=0.5 10us 1 Normalized Thermal Response (Rthjc) 0.2 ID (A) 100us 1ms 0.1 0.1 0.1 0.05 10ms 100ms o T c =25 C Single Pulse 0.02 PDM t 0.01 T Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.01 1 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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