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AO4801A Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4801A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4801A is Pb-free (meets ROHS & Sony 259 specifications)
Features
VDS (V) = -30V ID =-5.6A (VGS = 10V) RDS(ON) < 42m (VGS = 10V) RDS(ON) < 52m (VGS = 4.5V) RDS(ON) < 75m (VGS = 2.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested
SOIC-8 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
D1
D2
G1 S1
G2 S2
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol 10 Sec VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Avalanche Current
B B
Steady State
Units V
-30 12 4.2 3.4 -30 11 18
TA=25C TA=70C IDSM IDM IAR EAR PDSM TJ, TSTG TA=25C
5.6 4.5
A
Repetitive avalanche energy L=0.3mH B Power Dissipation TA=70C
mJ 1.1 0.7 W C
2.0 1.3 -55 to 150
Junction and Storage Temperature Range Thermal Characteristics Parameter
Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
C A A
Symbol
t 10s Steady-State Steady-State
RJA RJL
Typ 48 74 35
Max 62.5 110 40
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4801A
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250uA, VGS=0V VDS=-30V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-5.6A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-4.5V, ID=-3.5A VGS=-2.5V, ID=-2.5A gFS VSD IS Forward Transconductance VDS=-5V, ID=-5.6A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current -0.6 -25 34 48 41 60 14 -0.74 -1 -2 933 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 108 81 6 9.3 VGS=-4.5V, VDS=-15V, ID=-5.6A 1.5 3.7 5.2 VGS=-10V, VDS=-15V, RL=2.7, RGEN=6 IF=-5.6A, dI/dt=100A/s 6.8 42 15 21 14.3 28 9 12.2 1200 42 60 52 75 -0.95 Min -30 -1 -5 100 -1.3 Typ Max Units V uA nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-5.6A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. Rev0: Mar. 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4801A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 -10V 25 20 -ID (A) 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics 90 VGS=-2.5V Normalized On-Resistance 1.6 ID=-3.5A, VGS=-4.5V 1.4 ID=-5.6A, VGS=-10V VGS=-2.5V ID=-2.5A 1 -2.5V -4.5V -3V -ID(A) 10 VDS=-5V 8 6 4 2 VGS=-2V 0 0 0.5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics
125C 25C
70 RDS(ON) (m)
50
VGS=-4.5V
1.2
30 VGS=-10V 0 2 4 6 8 10
10
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
-ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 ID=-5.6A 80 RDS(ON) (m) -IS (A) 125C 60 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03
125C
25C 40 25C 20 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4801A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0 3 6 9 12 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10s 1600 VDS=-15V ID=-5.6A Capacitance (pF) 1200 Ciss 800
400
Coss
Crss
0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics
50 40 TJ(Max)=150C TA=25C
ID (Amps)
10.0
Power (W)
RDS(ON) limited
30 20 10 0 0.0001 0.001
100s 1s 1.0 10s TJ(Max)=150C TC=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (NoteE) 10 100 1ms 10ms DC 0.1s
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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