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| STU/D9916L SamHop Microelectronics Corp. Preliminary Mar.25 2004 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V FEATURES ( m [ ) Max ID 25A RDS(ON) Super high dense cell design for low RDS(ON). 30@ VGS = 10V 40@ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G SDU SERIES TO-252AA(D-PAK) SDD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a @TA= 25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 20 25 63 20 50 -55 to 175 Unit V V A A A W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1 R JC R JA 3 50 C/W C/W S T U/D9916L E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS b S ymbol Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS = 10V, ID =20A VGS = 4.5V, ID = 20A VDS = 10V, VGS = 10V VDS = 10V, ID = 20A Min Typ Max Unit 30 1 100 0.7 1.0 25 35 20 10 813 127 98 821 130 104 29 12 31 22 20 10 4 4 1.5 V uA nA V ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 30 m ohm 40 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance CISS COSS CRSS b VDs =25V, VGS = 0V f = 1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 2 VDD = 15V, ID =1A, VGS = 10V, R L = 15 ohm R GS = 11 ohm VDD = 15V,ID = 20A,VGS =10V VDS = 15V,ID = 20A,VGS =4.5V VDD = 15V, ID = 20A, R L=0.75 ohm 22.1 11.4 28.9 18.7 18.7 9.3 3.9 3.2 ns ns ns ns nC nC nC nC STU/D9916L ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is =15A Min Typ Max Unit 1 1.3 V C DRAIN-SOURCE DIODE CHARACTERISTICS b Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 VGS=10~4V 25 20 16 I D, Drain Current(A) ID, Drain Current (A) 12 VGS=3V 8 4 VGS=2V 0 0 2 4 6 8 10 12 15 Tj=125 C 10 25 C -55 C 5 0 0 0.5 1 1.5 2 2.5 3 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 1200 1000 2.2 1.8 Figure 2. Transfer Characteristics VGS=10V ID=20A C, Capacitance (pF) 800 600 400 200 0 Crss 0 5 10 15 20 RDS(ON), On-Resistance Ciss 1.4 1.0 0.6 0.2 0 Coss (Normalized) 25 30 -50 -25 0 25 50 75 100 125 VDS, Drain-to Source Voltage (V) TJ, Junction Temperature ( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature 3 STU/D9916L BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 VDS=VGS ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 ID=250uA Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 18 Figure 6. Breakdown Voltage Variation with Temperature 20 gFS, Transconductance (S) 12 9 6 3 0 VDS=10V 0 5 10 15 20 25 Is, Source-drain current (A) 15 10 1 0 0.4 0.6 0.8 1.0 TJ=25 C 1.2 1.4 IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 10 ID, Drain Current (A) Figure 8. Body Diode Forward Voltage Variation with Source Current 70 VGS, Gate to Source Voltage (V) 8 6 4 2 0 0 VDS=15V ID=20A 50 R DS ( ) ON Lim it 10 10 0m s ms 10 1 1s DC 1 0.03 VGS=10V Single Pulse Tc=25 C 0.1 1 10 30 50 2 4 6 8 10 12 14 16 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 9. Gate Charge Figure 10. Maximum Safe Operating Area 4 S T U/D9916L V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 6 S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 P DM t1 1. 2. 3. 4. 10 10 10 t2 R cJ A (t)=r (t) * R cJ A R cJ A=S ee Datas heet T J M-T A = P DM* R cJ A (t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S T U/D9916L 6 S T U/D9916L 5 95 7 84 9 6.00 35 05 85 0.94 4 3 0 9 7 30 3 9 36 3 41 3 3 5 1 4 L2 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 BSC 398 0.064 33 REF. 7 S T U/D9916L TO-251 Tube TO251 Tube/TO-252 Tape and Reel Data " A" TO-252 Carrier Tape UNIT:P PACKAGE TO-252 (16 P) A0 6.80 O0.1 B0 10.3 O0.1 K0 2.50 O0.1 D0 r2 D1 r1.5 + 0.1 -0 E 16.0 0.3O E1 1.75 0.1O E2 7.5 O0.15 P0 8.0 O0.1 P1 4.0 O0.1 P2 2.0 O0.15 T 0.3 O0.05 TO-252 Reel S UNIT:P TAPE SIZE 16 P REEL SIZE r 330 M r330 O 0.5 N r97 O 1.0 W 17.0 + 1.5 -0 T 2.2 H r13.0 + 0.5 - 0.2 K 10.6 S 2.0 O0.5 G R V 8 |
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