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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
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Next Data Sheet Bulletin I25172/A
ST303C..C SERIES
INVERTER GRADE THYRISTORS Features
Metal case with ceramic insulator International standard case TO-200AB (E-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance
Puk Version
620A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
case style TO-200AB (E-PUK)
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM /V RRM tq range (*) TJ
ST303C..C
620 55 1180 25 7950 8320 316 289 400 to 1200 10 to 30 - 40 to 125
Units
A C A C A A KA2s KA2s V s
C
(*) tq = 10 to 20s for 400 to 800V devices tq = 15 to 30s for 1000 to 1200V devices
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ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
04 ST303C..C 08 10 12
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V DRM /V RRM , maximum repetitive peak voltage V
400 800 1000 1200
VRSM , maximum non-repetitive peak voltage V
500 900 1100 1300
I DRM /I RRM max.
@ TJ = TJ max.
mA
50
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Heatsink temperature Equivalent values for RC circuit 1314 1260 900 340 50 V DRM 50 40
ITM 180oel 1130 1040 700 230 50 50 55 2070 2190 1900 910 50 V DRM 40
ITM 100s 1940 1880 1590 710 50 55 6930 3440 1850 740 50 V DRM 40
ITM
Units
6270 2960 1540 560 50 55 V A/s C A
10 / 0.47F
10 / 0.47F
10 / 0.47F
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one half cycle, non-repetitive surge current
ST303C..C
620 (230) 55 (85) 1180 7950 8320 6690 7000
Units Conditions
A C 180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2s t = 10ms t = 8.3ms KA s
2
No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
It
2
Maximum I t for fusing
2
316 289 224 204
I t
2
Maximum I t for fusing
2
3160
t = 0.1 to 10ms, no voltage reapplied
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Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-state Power Loss Characteristics
Fig. 6 - On-state Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
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Fig. 8 - Maximum Non-repetitive Surge Current
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Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Fig. 13 - Frequency Characteristics
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Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
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10 0
Index
(1) (2) (3) (4) (a ) PG PG PG PG M M M M = = = =
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10W , 20W , 4 0W , 60W , tp tp tp tp = = = = 20m s 10m s 5m s 3 .3 m s
In st a n t a n e o u s G a t e V o lt a g e ( V )
10
Re c ta n g u la r g a te p u lse a ) Re c o m m e n d e d lo a d lin e fo r ra t e d d i/ d t : 2 0 V , 1 0 o h m s; tr< = 1 s b ) Re c o m m e n d e d lo a d lin e fo r < = 3 0 % ra t e d d i/ d t : 10 V , 1 0 o h m s t r< = 1 s (b )
Tj= -40 C
Tj= 25 C
Tj= 125 C
1 VGD IG D 0.1 0.001
(1)
(2)
(3 ) (4 )
D e v ic e : ST30 3 C ..C Se rie s Fre q u e n c y Lim it e d b y PG ( A V ) 0.01 0.1 1 10 100
In st a n t a n e o u s G a te C u rre n t ( A )
Fig. 17 - Gate Characteristics
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On-state Conduction
Parameter
V TM Max. peak on-state voltage voltage V T(TO)2 High level value of threshold voltage r t1 r t2 IH IL Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current
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ST303C..C Units
2.16 1.44 1.48 0.57 m 0.56 600 1000 mA V
Conditions
ITM= 1255A, TJ = TJ max, tp = 10ms sine wave pulse (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. T J = 25C, I T > 30A T J = 25C, V A= 12V, Ra = 6, I G= 1A
V T(TO)1 Low level value of threshold
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time
ST303C..C Units
1000 0.83 Min 10 Max 30 s A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/s VR = 50V, tp = 500s, dv/dt: see table in device code
Max. turn-off time (*)
(*) tq = 10 to 20s for 400 to 800V devices; tq = 15 to 30s for 1000 to 1200V devices.
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST303C..C Units
500 50 V/s mA
Conditions
TJ = TJ max. linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST303C..C Units
60 10 10 20 V W A
Conditions
TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -VGM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
TJ = TJ max, tp 5ms
5 200 3 20 0.25 mA TJ = 25C, VA = 12V, Ra = 6 V mA V TJ = TJ max, rated VDRM applied
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ST303C..C Series
Parameter
TJ Tstg
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Thermal and Mechanical Specification
ST303C..C
-40 to 125 -40 to 150 0.09 0.04 0.020 0.010 9800 (1000) wt Approximate weight Case style 83 TO - 200AB (E-PUK) K/W C DC operation single side cooled DC operation double side cooled DC operation single side cooled DC operation double side cooled
Units Conditions
Max. operating temperature range Max. storage temperature range
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
K/W N (Kg) g
See Outline Table
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction
Single Side Double Side 0.010 0.012 0.015 0.022 0.036 0.010 0.012 0.015 0.022 0.036 Single Side Double Side 0.007 0.012 0.016 0.023 0.036 0.007 0.013 0.017 0.023 0.037
Units
Conditions
K/W
TJ = TJ max.
Ordering Information Table
Device Code
ST
1 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk
30
2
3
3
C
4
12
5
C
6
H
7
K
8
1
9 10
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection) dv/dt - tq combinations available
dv/dt (V/s) 20 tq (s) 10 CN 12 CM up to 800V 15 CL 20 CK tq (s) 15 18 20 only for 25 1000/1200V 30 CL CP CK CJ -50 DN DM DL DK -DP DK DJ DH 100 EN EM EL EK --EK EJ EH 200 FN * FM FL * FK * 400 HN HM HL HK
----FK * HK FJ * HJ FH HH
*Standard part number.
All other types available only on request.
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Outline Table
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ANODE TO GATE CREEPAGE DISTANCE: 11.18 (0.44) MIN. STRIKE DISTANCE: 7.62 (0.30) MIN. 25.3 (0.99) DIA. MAX. 0.3 (0.01) MIN.
14.1 / 15.1 (0.56 / 0.59) 0.3 (0.01) MIN. 25.3 (0.99) DIA. MAX. 40.5 (1.59) DIA. MAX. GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE
Case Style TO-200AB (E-PUK)
All dimensions in millimeters (inches)
2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19)
25 5
42 (1.65) MAX. 28 (1.10)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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