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| MIG50Q6CSB1X TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG50Q6CSB1X (1200V/50A 6in1) High Power Switching Applications Motor Control Applications * * * * Integrates inverter and control circuits (IGBT drive units, protection units for short-circuit current, over current, under voltage and over temperature) in one package. The electrodes are isolated from case. VCE (sat) = 2.2 V (typ.) UL recognized: File No. E87989 Equivalent Circuit 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 FO IN VD GND FO IN VD GND FO IN VD GND GND IN FO VD GND IN FO VD GND IN FO VD GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT W 1. 8. 15. VD (U) GND (V) Open 2. 9. 16. FO (U) VD (W) Open 3. 10. 17. V IN (U) FO (W) IN (X) 4. 11. 18. U GND (U) IN (W) IN (Y) 5. 12. 19. VD (V) GND (W) IN (Z) B 6. 13. 20. FO (V) VD (L) N 7. 14. IN (V) FO (L) P GND (L) 1 2003-02-19 MIG50Q6CSB1X Package Dimensions: TOSHIBA 2-108G1D Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) Open 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 2 2003-02-19 MIG50Q6CSB1X Signal Terminal Layout Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) Open 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 3 2003-02-19 MIG50Q6CSB1X Maximum Ratings (unless otherwise specified, Tj = 25C) Stage Characteristic Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Control supply voltage Input voltage Control Fault output voltage Fault output current Operating temperature Storage temperature range Module Isolation voltage Screw torque (terminal) Screw torque (mounting) AC 1 minute M4 M5 FO-GND terminal FO sink current 3/4 3/4 Tc = 25C, DC Tc = 25C, DC Tc = 25C 3/4 VD-GND terminal IN-GND terminal Condition P-N power terminal 3/4 Symbol VCC VCES IC IF PC Tj VD VIN VFO IFO Tc Tstg VISO 3/4 3/4 Ratings 900 1200 50 50 580 150 20 20 20 14 -20 to 100 -40 to 125 2500 2 3 Unit V V A A W C V V V mA C C V N*m N*m Electrical Characteristics 1. Inverter Stage Characteristic Collector cut-off current Symbol ICEX Test Condition VCE = 1200 V VD = 15 V, IC = 50 A, VIN = 15 V (R) 0 V IF = 50 A, Tj = 25C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 3/4 3/4 3/4 3/4 3/4 3/4 VCC = 600 V, IC = 50 A, VD = 15 V, VIN = 15 V 0 V, Tj = 25C, Inductive load (Note 1) 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 2.2 3/4 2.4 2.0 0.3 0.3 1.5 0.4 Max 1 10 2.6 V 3.0 2.8 3.0 3/4 3/4 2.5 3/4 ms V Unit mA Collector-emitter saturation voltage Forward voltage VCE (sat) VF ton tc (on) Switching time trr toff tc (off) Note 1: Switching time test circuit and timing chart. 4 2003-02-19 MIG50Q6CSB1X 2. Control Stage (Tj = 25C) Characteristic Control circuit current Input-on signal voltage Input-off signal voltage Protection Fault output current Normal Over current protection trip level Short-circuit current protection trip level Over current cut-off time Over temperature protection Control supply under voltage protection Fault output pulse width Trip level Reset level Trip level Reset level Inverter Inverter High side Low side Symbol ID (H) ID (L) VIN (on) VIN (off) IFO (on) IFO (off) OC SC toff (OC) OT Case temperature OTr UV UVr tFO VD = 15 V 3/4 VD = 15 V VD = 15 V VD = 15 V VD = 15 V VD = 15 V, Tj < 125C = VD = 15 V, Tj < 125C = VD = 15 V Test Condition Min 3/4 3/4 1.4 2.2 8 3/4 80 80 3/4 110 3/4 11.0 12.0 1 Typ. 13 39 1.6 2.5 10 3/4 3/4 3/4 5 118 98 12.0 12.5 2 Max 17 51 1.8 2.8 12 mA 0.1 3/4 3/4 3/4 125 3/4 12.5 V 13.0 3 ms C A A ms V V Unit mA 3. Thermal Resistance (Tc = 25C) Characteristic Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Inverter FRD stage Rth (c-f) Compound is applied Test Condition Inverter IGBT stage Min 3/4 3/4 3/4 Typ. 3/4 3/4 0.017 Max 0.215 C/W 0.464 3/4 C/W Unit 5 2003-02-19 MIG50Q6CSB1X Switching Time Test Circuit Intelligent power module TLP559 VD 0.1 mF 15 kW OUT IN 15 V 10 mF GND VS P GND U (V, W) VCC VD IF = 16 mA PG 15 V 10 mF GND 0.1 mF 15 kW OUT IN VS N GND Timing Chart Input Pulse 15 V VIN Waveform 0 2.5 V 1.6 V 90% Irr IC Waveform Irr 90% trr 20% Irr VCE Waveform 10% 10% tc (off) 10% 10% tc (on) toff ton 6 2003-02-19 MIG50Q6CSB1X 4. Recommended conditions for application Characteristic Supply voltage Control supply voltage Carrier frequency Dead time Symbol VCC VD fc tdead Test Condition P-N Power terminal VD-GND Signal terminal PWM Control Switching time test circuit (see page.6) (Note 2) Min 3/4 13.5 3/4 3 Typ. 600 15 3/4 3/4 Max 800 16.5 20 3/4 Unit V V kHz ms Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead 7 2003-02-19 MIG50Q6CSB1X IC - VCE 100 100 IC - VCE VD = 15 V (A) 75 VD = 17 V (A) VD = 15 V 75 VD = 17 V VD = 13 V IC Collector current 50 Collector current VD = 13 V IC 50 25 Common emitter Tj = 25C 0 0 1 2 3 4 5 25 Common emitter Tj = 125C 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Switching time - IC 10 10 Switching time - IC 3 3 ton toff (ms) 1 tc (off) tc (on) (ms) ton toff 1 tc (off) tc (on) 0.3 Switching time 0.3 0.1 Tj = 25C 0.03 VCC = 600 V VD = 15 V L-LOAD 0.01 0 10 20 30 40 50 60 Switching time 0.1 Tj = 125C 0.03 VCC = 600 V VD = 15 V L-LOAD 0.01 0 10 20 30 40 50 60 Collector current IC (A) Collector current IC (A) IF - VF 100 100 trr, Irr - IF Peak reverse recovery current Irr (A) Reverse recovery time trr (10 nS) Irr (A) 75 30 Forward current IF trr 10 50 25 Common cathode : Tj = 25C : Tj = 125C 0 0 1 2 3 4 5 3 Common cathode : Tj = 25C 1 0 : Tj = 125C 10 20 30 40 50 60 Forward voltage VF (V) Forward current IF (A) 8 2003-02-19 MIG50Q6CSB1X OC - Tc Inverter stage 125 ID (H) - fc High side control circuit current ID (H) (mA) 20 150 OC (A) 16 Over current protection trip level 100 12 75 8 50 25 VD = 15 V 0 0 25 50 75 100 125 150 4 VD = 15 V 0 0 5 10 15 20 25 Case temperature Tc (C) Carrier frequency fc (kHz) ID (L) - fc 80 100 Reverse bias SOA Low side control circuit current ID (L) (mA) OC 60 IC (A) 80 60 40 Collector current 40 20 20 VD = 15 V 0 0 5 10 15 20 25 0 0 Tj < 125C = VD = 15V 200 400 600 800 1000 1200 1400 Carrier frequency fc (kHz) Collector-emitter voltage VCE (V) Rth (t) - tw Inverter stage 10 Tc = 25C Transient thermal resistance Rth (t)/(C/W) 1 Diode stage Transistor stage 0.1 0.01 0.001 0.01 0.1 1 10 Pulse width tw (s) 9 2003-02-19 MIG50Q6CSB1X Turn on loss - IC 100 100 Turn off loss - IC Eon (mJ) 10 Eoff (mJ) 10 Turn on loss 1 Turn off loss VCC = 600 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 10 20 30 40 50 60 1 VCC = 600 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 10 10 30 40 50 60 0.1 0 0.1 0 Collector current IC (A) Collector current IC (A) 10 2003-02-19 MIG50Q6CSB1X RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 11 2003-02-19 |
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