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BB669
Silicon Tuning Diode
2
For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance Extremely small plastic SMD package Excellent uniformity and matching due to "in-line" matching assembly procedure
VPS05176

1
Type BB669
Marking 1
Pin Configuration 1=C 2=A
Package SOD323
Maximum Ratings Parameter Diode reverse voltage Forward current Storage temperature Peak reverse voltage (R 5k) Symbol VR VRM IF Top Tstg Value 30 35 20 -55... 150 -55... 150 mA C Unit V
Operating temperature range
1
Jul-05-2001
BB669
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Reverse current VR = 30 V Reverse current VR = 30 V, TA = 85 C
AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 8 V, f = 470 MHz Series inductance Ls 1.8 1) In-line matching. For details please refer to Application Note 047
Symbol min. IR IR -
Values typ. max. 10 200
Unit
nA
CT 51 39.6 2.6 2.5 CT2 /CT25 CT1 /CT28 CT /CT 14.5 18 56.5 43.4 2.8 2.7 15.5 20.9 0.85 61.5 47.2 3 2.9 17 23.3 2 -
pF
-
2
Jul-05-2001
nH
Capacitance ratio 1)
%
rs
BB669
Diode capacitance CT = f (VR) f = 1MHz Reverse current IR = f (VR ) TA = Parameter
10 -9
60 pF 50
A
85C
45
CT
40 35 30 25 20 15 10 5 0 0 4 8 12 16 20 24
V
IR
10 -10
25C
30
10 -11 0
5
10
15
20
V
30
VR
VR
Temperature coefficient of the diode capacitance TCc = f (VR)
10 -3
1/C
TCc
10 -4 10 -5 0 10
10
1
V
10
2
VR
3
Jul-05-2001

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