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 MCC
Features
* *
omponents 21201 Itasca Street Chatsworth !"# $
% !"#
MMBT4403
Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation
C Pin Configuration Top View
PNP General Purpose Amplifier
SOT-23
A D
2T
B E
Electrical Characteristics @ 25C Unless Otherwise Specified
Symbol Parameter Collector-Emitter Breakdown Voltage* (I C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=100Adc, IE=0) Emitter-Base Breakdown Voltage (I E=100Adc, IC=0) Base Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) Collector Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) DC Current Gain* (I C=0.1mAdc, VCE=1.0Vdc) (I C=1.0mAdc, VCE=1.0Vdc) (I C=10mAdc, VCE=1.0Vdc) (I C=150mAdc, VCE=2.0Vdc) (I C=500mAdc, VCE=2.0Vdc) Collector-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Current Gain-Bandwidth Product (I C=20mAdc, VCE=10Vdc, f=100MHz) Output Capacitance (VCB=10Vdc, IE=0, f=1.0MHz) Input Capacitance (VEB=0.5Vdc, IC=0, f=1.0MHz) Delay Time (VCC=3.0Vdc, VBE=2.0Vdc Rise Time IC=150mAdc, IB1=15mAdc) Storage Time (VCC=3.0Vdc, IC=150mAdc Fall Time IB1=IB2=15mAdc) 300s, Duty Cycle 2.0% Min 40 40 5.0 0.1 0.1 Max Units Vdc
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Vdc Vdc Adc Adc
G F E
C
B
H
J
ON CHARACTERISTICS
hFE 30 60 100 100 20
K DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37
300
VCE(sat)
0.4 0.75 0.75 0.95 1.30
Vdc
VBE(sat)
Vdc
DIM A B C D E F G H J K
MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020
MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51
NOTE
SMALL-SIGNAL CHARACTERISTICS
fT Ccb Ceb 200 8.5 30.0 15 20 225 30 MHz pF pF ns ns ns ns
.035 .900
Suggested Solder Pad Layout
.031 .800
SWITCHING CHARACTERISTICS
td tr ts tf *Pulse Width
.079 2.000
inches mm
.037 .950 .037 .950
www.mccsemi.com
MMBT4403
DC Current Gain vs Collector Current 300 VCE = 10V 250 200 hFE 150 100 50 VBE(ON) - (V) 0.6 0.4 T = 100C A 0.2 0 0.1 1.2 1.0 0.8
MCC
Base-Emitter ON Voltage vs Collector Current VCE = 5.0V TA = 25C
0.1
1 IC (mA)
10
100
1.0 IC - (mA)
10
100
Pulsed Base Saturation Volatge vs Collector Current -1.5 IC/IB = 10 -1.3 -1.1 VBE(SAT) - (V) -0.9 VCE(SAT) - (V) -.1 -.5
Pulsed Collector Saturation Voltage vs Collector Current IC/IB = 10
-0.7 -.05 -0.5 0 -1.0 -.02 -1.0
-10
-100 IC - (mA)
-1000
-10 IC - (mA)
-100
-1000
Collector Reverse Current vs Reverse Bias Voltage 100 0 TA = 25C 100 ICES - (A) 10 pF
Input and Output Capacitances vs Reverse Bias Voltage 20 TA = 25C 16 CIBO
12
8 4 1.0 0 -10 -20 -30 VCE - (V) -40 -50 -60 0 -0.1
COBO
-1.0 Volts - (V)
-10
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MMBT4403
Maximum Power Dissipation vs Ambient Temperature 800 1000
MCC
Turn On and Turn Off Times vs Collector Current TO-92 toff 100 T - (ns) ton 10
600 PD(MAX) - (mW) 400
200 SOT-23 0 0 50 100 TA - (C) Contours of Constant Gain Bandwidth Product (fT) 1000 -10 -8 100 VCE - (V) -4 -1.0 -.8 -.4 0 -0.1 1.0 -1.0 -10 IC - (mA) *25MHz increments from 50 to 200MHz -100 10 td 100 IC - (mA) 1000 T - (ns) ts tf tr IB1 = IB2 = IC/10 150 200 1.0 10 IB1 = IB2 = IC/10 VCC(OFF) = 15V 100 IC - (mA) Switching Times vs Collector Current 1000
10
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