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 HITFET(R)BTS 941
Smart Lowside Power Switch
Features * Logic Level Input * Input Protection (ESD) * Thermal Shutdown * Overload protection * Short circuit protection * Overvoltage protection * Current limitation * Maximum current adjustable with external resistor * Current sense * Status feedback with external input resistor * Analog driving possible
Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy
VDS R DS(on) I D(lim) I D(ISO) EAS
60 28 6 12
V m A A
4000 mJ
Application
* All kinds of resistive, inductive and capacitive loads in switching or linear applications * C compatible power switch for 12 V and 24 V DC applications * Replaces electromechanical relays and discrete circuits
N channel vertical power FET in Smart SIPMOS (R) chip on chip technology. Fully protected by embedded protected functions.
V bb
General Description
+
LOAD NC Drain dv/dt limitation Current limitation Overvoltage protection M
2
3
1
IN
4
CC Overtemperature protection
ESD R CC
Overload protection
Short circuit Short circuit protection protection Source 5
HITFET
(R)
Semiconductor Group
Page 1
02.12.1998
BTS 941
Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection RCC = 0 without RCC Continuous input current -0.2V V IN 10V
1)
Symbol
Value 60 15 50
Unit V
VDS VDS(SC)
I IN
no limit | IIN | 2
mA
VIN < -0.2V or VIN > 10V
Operating temperature Storage temperature Power dissipation
Tj T stg Ptot EAS
- 40 ... +150 - 55 ... +150 149 4000 3000
C W mJ V
T C = 25 C
Unclamped single pulse inductive energy
I D(ISO) = 12 A
Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection V LoadDump2) = V A + VS VIN=low or high; V A=13.5 V t d = 400 ms, RI = 2 , ID=0,5*12A t d = 400 ms, RI = 2 , ID= 12A DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1
VLD
100 84 E 40/150/56
Thermal resistance junction - case: junction - ambient: SMD version, device on PCB: 3)
RthJC RthJA RthJA
0.84 75 45
K/W
1A sensor holding current of 500 A has to be guaranted in the case of thermal shutdown (see also page 3) 2V is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Loaddump
3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 m thick) copper area for Drain connection. PCB is vertical without blown air.
Semiconductor Group
Page 2
02.12.1998
BTS 941
Electrical Characteristics Parameter at Tj=25C, unless otherwise specified Characteristics Drain source clamp voltage Symbol min. Values typ. 1.7 35 270 2500 max. 73 20 2.2 100 500 4000 V A V A Unit
VDS(AZ) I DSS VIN(th) IIN(1)
60 1.3 1000
T j = - 40 ...+ 150C, ID = 10 mA
Off state drain current
VDS = 32 V, T j = -40...+150 C, V IN = 0 V
Input threshold voltage
I D = 2,7 mA
Input current - normal operation, IDVIN = 10 V
Input current - current limitation mode, I D=ID(lim): I IN(2)
VIN = 10 V
Input current - after thermal shutdown, ID=0 A: VIN = 10 V Input holding current after thermal shutdown
I IN(3) I IN(H)
T j = 25 C T j = 150 C
On-state resistance
500 300
31 52 25 45
m 34 68 28 56 A
RDS(on)
-
I D = 12 A, VIN = 5 V, Tj = 25 C I D = 12 A, VIN = 5 V, Tj = 150 C
On-state resistance
RDS(on)
12
I D = 12 , VIN = 10 V, T j = 25 C I D = 12 , VIN = 10 , T j = 150
Nominal load current (ISO 10483)
I D(ISO)
VIN = 10 V, V DS = 0.5 V, TC = 85 C
Semiconductor Group
Page 3
02.12.1998
BTS 941
Electrical Characteristics Parameter at Tj=25C, unless otherwise specified
Characteristics Initial peak short circuit current limit
Symbol min.
Values typ. max.
Unit
ID(SCp) ID(lim)
-
160
-
A
VIN = 10 V, VDS = 12 V
Current limit 1)
VIN = 10 V, VDS = 12 V, tm = 350 s, Tj = -40...+150 C, without RCC VIN = 10 V, VDS = 12 V, tm = 350 s, Tj = -40...+150 C, RCC = 0
Dynamic Characteristics Turn-on time Turn-off time Slew rate on Slew rate off
6 100
12 130
25 170
VIN to 90% I D: V IN to 10% ID:
t on t off
G9 '6GWRQ G9'6GW RII
-
40 70 1 1
100 170 3 3
s s V/s
RL = 2,2 , VIN = 0 to 10 V, Vbb = 12 V RL = 2,2 , VIN = 10 to 0 V, Vbb = 12 V
70 to 50% Vbb: RL = 2,2 , VIN = 0 to 10 V, Vbb = 12 V 50 to 70% Vbb:
RL = 2,2 , VIN = 10 to 0 V, Vbb = 12 V
Protection Functions
Thermal overload trip temperature Unclamped single pulse inductive energy
T jt EAS
150 4000 900
165 -
-
C mJ
I D = 12 A, Tj = 25 C, Vbb = 32 V I D = 12 A, Tj = 150 C, Vbb = 32 V
Inverse Diode
Inverse diode forward voltage
VSD
-
1.13
-
V
I F = 5*12A, t m = 300 S, VIN = 0 V
1Device switched on into existing short circuit (see diagram Determination of I D(lim) . Dependant on the
application, these values might be exceeded for max. 50 s in case of short circuit occurs while the device is on condition
Semiconductor Group
Page 4
02.12.1998
BTS 941
Block Diagramm Terms
RL I IN 1 RCC V IN V 4 CC IN HITFET CC S 5 3 D ID VDS Vbb
Inductive and overvoltage output clamp
V Z
D
S
HITFET
The ground lead impedance of RCC should be as low as possible Input circuit (ESD protection)
Short circuit behaviour
V IN I D(SCp)
IN
ID
I D(Lim)
ESD-ZD I Source
t0 tm t1
t2
ESD zener diodes are not designed for DC current > 2 mA @ VIN>10V.
t0: tm: t1:
t2:
Turn on into a short circuit Measurementpoint for ID(lim) Activation of the fast temperature sensor and regulation of the drain current to a level where the junction temperature remains constant. Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement.
Semiconductor Group
Page 5
02.12.1998
BTS 941
Maximum allowable power dissipation Ptot = f(Tc)
BTS 941
On-state resistance RON = f(Tj ); ID=12A; VIN =10V
60
160
W
m
RDS(on)
120
40
max.
Ptot
100
80
30
typ.
60
20
40 10 20 0 -50
0 0
20
40
60
80
100
120
C 150
160
-25
0
25
50
75
100
C
150
Operatin
On-state resistance RON = f(Tj ); ID= 12A; VIN=5V
70
Typ. input threshold voltage VIN(th) = f(Tj); ID =2,7A; VDS=12V
2.2
V
m
1.8
RDS(on)
VIN(th)
typ.
50
1.6 1.4 1.2
40
max.
30
1.0 0.8
20
0.6 0.4
10 0.2 0 -50 -25 0 25 50 75 100
C
150
0.0 -50
-25
0
25
50
75
100
C
150
Tj
Tj
Page 6
Semiconductor Group
02.12.1998
BTS 941
Typ. transfer characteristics I D = f(V IN); V DS=12V; Tj=25C
140
Typ. short circuit current IDlim = f(Tj); RCC =0, VDS =12V Parameter: VIN
150
A
A 10V
100 100
7V
ID
80
ID
6V
75 60 50 40
4V 5V
20
25
3V
0 0
2
4
6
V
10
0 -50
-25
0
25
50
75
100
C
150
VIN
Tj
Typ. output characteristic ID = f(VDS); T j=25C Parameter: VIN
100
10V
Safe Operating Area ID(SC) = f(VDS ); Tj =25C
180
A
A
6V
140 120
ID
5V
ID
100 80
4V
60
40 60 40
Vin=3V
20
20 0 0
0 0
2
4
V
8
10
20
30
V
50
VDS
VDS
Page 7
Semiconductor Group
02.12.1998
BTS 941
Typ. current limit versus R CC I D(lim) = f(RCC); T j=25C Parameter: VIN
140
10V A mV
Typ. current sense characteristics VCC = f(ID); VIN=10V Parameter: RCC , Tj
500
68 Ohm no Rcc
100
125C
25C 27 Ohm
VCC
5V
ID
80
300
60 200 40 100 20
10 Ohm
00 10
10
1
10
2
10
3
10 RDS(on)
4
0 0
10
20
30
A
50
ID
Transient thermal impedance ZthJC = f(tP) Parameter: D=t P/T
10 1
K/W
10 0
RthJC
D=0.5 0.2
10 -1
0.1 0.05 0.02
10
-2
0.01 0.005 0
10
-3
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
10
2
tP
Semiconductor Group
Page 8
02.12.1998
BTS 941
Application examples: Current Sense Features and Status Signals
IN
D S V bb
C
V CC
HITFET
CC RCC
IN open load thermal shutdown
Vcc
Vcc
reached triptemperature
The accuray of Vcc is at each temperature about 10 %
Status signal of thermal shutdown by monitoring input current
R St IN D S V bb
C
V IN
HITFET
CC
V
V IN
thermal shutdown
V = RST *IIN(3)
Semiconductor Group
Page 9
02.12.1998
BTS 941
Package and ordering code
all dimensions in mm
Ordering code: Q67060-S6702-A4
Ordering Code: Q67060-S6702-A2
Ordering Code: Q67060-S6702-A3
Semiconductor Group
Page 10
02.12.1998
BTS 941
Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, 81541 Munchen (c) Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1)A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Semiconductor Group
Page 11
02.12.1998


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