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| Datasheet File OCR Text: |
| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode B5819WS FEATURES Power dissipation PD: 200 mW (Tamb=25) 2.70 1.6 SCHOTTKY BARRIER DIODE SOD-323 + 1.05 Collector current 1 A IF: Collector-base voltage VR: 40 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 0.55 3.70 MARKING: SL ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) IR Test conditions IR= 1mA VR=40V VR=4V VR=6V IF=0.1A IF=1A IF=3A MIN 40 MAX UNIT V 1 0.05 0.075 0.45 0.6 0.9 120 mA Forward voltage VF V Diode capacitance CD VR=4V, f=1MHz pF WS |
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