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SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2799 (F10F35VX2) 350V 10A FEATURES *oe Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. *oe static Rds(on) is small. The *oe switching time is fast. The APPLICATION *oe Switching power supply of AC 100V input OUTLINE DIMENSIONS Case : E-pack Case : FTO-220 (Unit : mm) *oe High voltage power supply *oe Inverter RATINGS *oeAbsolute Maximum Ratings * = 25*Z*j Tc i Item Symbol Conditions Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current* DC*j i ID Continuous Drain Current* Peak) i IDP Continuous Source Current* DC*j i IS PT Total Power Dissipation Single Pulse Avalanche Current IAS Tch= 25*Z Dielectric Strength udis Terminals to case, AC 1 minute Mounting Torque TOR * i Recommended torque : 0.3Nm *j Ratings -55*150 150 350 *}30 10 30 10 50 10 2 0.5 Unit *Z V A W A kV w Copyright & Copy;2000 Shindengen Electr VX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranconductance gfs Static Drain-Source On-tate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage jc Themal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton toff Turn-Off Time Conditions 2SK2799 ( F10F35VX2 ) Min. 350 Typ. Max. 250 0.1 3.0 2.5 7.6 0.3 3.0 0.4 3.5 1.5 2.5 Unit V A S V / nC pF 105 300 ns ID = 1mA, VGS = 0V VDS = 350V, VGS = 0V VGS = 30V, VDS = 0V ID = 5A, VDS = 10V ID = 5A, VGS = 10V ID = 1mA, VDS = 10V IS = 5A, VGS = 0V junction to case VDD = 200V, VGS = 10V, ID = 10A VDS = 10V, VGS = 0V, f = 1MHZ ID = 5A, RL = 30, VGS = 10V 40 1130 125 330 70 210 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2799 20 Tc = -55C Transfer Characteristics 25C 100C 15 150C Drain Current ID [A] 10 5 VDS = 15V pulse test TYP 0 5 10 15 20 0 Gate-Source Voltage VGS [V] 2SK2799 10 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] 1 ID = 5A 0.1 0.01 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] 2SK2799 5 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK2799 100 Safe Operating Area 10 Drain Current ID [A] 100s 200s R DS(ON) limit 1ms 1 10ms Tc = 25C Single Pulse 0.1 1 10 100 DC 1000 Drain-Source Voltage VDS [V] 2SK2799 Transient Thermal Impedance 10 1 0.1 Transient Thermal Impedance jc(t) [C/W] 0.01 0.001 10-4 10-3 10-2 10-1 100 101 Time t [s] 2SK2799 10000 Capacitance Capacitance Ciss Coss Crss [pF] Ciss 1000 Coss 100 Crss Tc=25C TYP 10 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2799 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] 2SK2799 250 Gate Charge Characteristics 20 Drain-Source Voltage VDS [V] 15 VDD = 200V 100V 150 50V 10 100 VDS VGS 5 50 ID = 10A 0 0 20 40 60 80 0 100 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 200 |
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