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| SUP/SUB65P04-15 New Product Vishay Siliconix P-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) -40 0.023 @ VGS = -4.5 V -50 rDS(on) (W) 0.015 @ VGS = -10 V ID (A) -65 TO-220AB S TO-263 G DRAIN connected to TAB G GDS Top View SUP65P04-15 SUB65P04-15 P-Channel MOSFET DS Top View D ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)b TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit -40 "20 -65 -37 Unit V A -240 -60 180 120c W 3.75 -55 to 175 _C mJ Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)b Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes: a. Duty cycle v 1%. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. Document Number: 71174 S-00831--Rev. A, 01-May-00 www.vishay.com S FaxBack 408-970-5600 RthJA RthJC 62.5 1.25 Symbol RthJA Limit 40 Unit _C/W 2-1 SUP/SUB65P04-15 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -40 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = -40 V, VGS = 0 V, TJ = 125_C VDS = -40 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -30 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = -10 V, ID = -30 A, TJ = 125_C VGS = -10 V, ID = -30 A, TJ = 175_C VGS = -4.5 V, ID = -20 A Forward Transconductancea gfs VDS = -15 V, ID = -50 A 20 0.018 -120 0.012 0.015 0.024 0.030 0.023 W S W -40 V -1 -3 "100 -1 -50 -250 A mA A nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = -20 V, RL = 0.3 W , ID ] -65 A, VGEN = -10 V, RG = 2.5 W VDS = -20 V VGS = -10 V, ID = -65 A 20 V, 10 V 65 VGS = 0 V, VDS = -25 V f = 1 MHz V 25 V, MH 5400 640 300 85 25 15 15 380 75 140 25 580 ns 115 210 130 nC C pF F Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = -65 A, di/dt = 100 A/ms 65 A di/d A/ IF = -65 A, VGS = 0 V -1.2 40 2.0 0.04 -65 A -240 -1.5 80 4 0.1 V ns A mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 71174 S-00831--Rev. A, 01-May-00 SUP/SUB65P04-15 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 7 V 200 I D - Drain Current (A) I D - Drain Current (A) 6V 80 100 Vishay Siliconix Transfer Characteristics 150 5V 100 60 40 TC = 125_C 20 25_C -55_C 0 50 4V 3, 2 V 0 0 2 4 6 8 10 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 80 TC = -55_C 25_C g fs - Transconductance (S) 60 125_C r DS(on) - On-Resistance ( W ) 0.03 0.04 On-Resistance vs. Drain Current 40 0.02 VGS = 4.5 V VGS = 10 V 0.01 20 0 0 20 40 60 80 100 0 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Capacitance 8000 20 Gate Charge V GS - Gate-to-Source Voltage (V) 16 6000 C - Capacitance (pF) Ciss VDS = 20 V ID = 65 A 12 4000 8 2000 Coss Crss 4 0 0 6 12 18 24 30 0 0 40 80 120 160 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 71174 S-00831--Rev. A, 01-May-00 www.vishay.com S FaxBack 408-970-5600 2-3 SUP/SUB65P04-15 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 30 A r DS(on) - On-Resistance ( W ) (Normalized) I S - Source Current (A) 1.5 100 Source-Drain Diode Forward Voltage TJ = 150_C 1.0 10 0.5 TJ = 25_C 0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 60 Drain Source Breakdown vs. Junction Temperature ID = 250 mA 55 100 I Dav (a) IAV (A) @ TA = 25_C V (BR)DSS (V) IAV (A) @ TA = 150_C 1 50 10 45 40 0.1 0.00001 0.0001 0.001 0.01 0.1 1 35 -50 -25 0 25 50 75 100 125 150 175 tin (Sec) TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71174 S-00831--Rev. A, 01-May-00 SUP/SUB65P04-15 New Product THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 75 1000 Vishay Siliconix Safe Operating Area 60 100 I D - Drain Current (A) 45 I D - Drain Current (A) Limited by rDS(on) 10 ms 100 ms 10 1 ms 10 ms 100 ms dc 30 1 15 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Case Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) Document Number: 71174 S-00831--Rev. A, 01-May-00 www.vishay.com S FaxBack 408-970-5600 2-5 |
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