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Silicon PIN Photodiode in TO-Package * * * * * * * * * * *
SRD 00111Z
Si-PIN-photodiode Designed for application in fiber-optic Transmission systems Sensitive receiver for the 1st window (850 nm) Suitable for bit rates up to 565 Mbit/s Low junction and low package capacitance Fast switching times Low dark current Low noise Hermetically sealed 3-pin metal case Cathode electrically isolated from case Ordering Code Q62702-P3019 Connector/Flange TO, without optics
Type SRD 00111Z
Maximum Ratings Parameter Reverse voltage Isolation voltage to case Junction temperature Storage temperature Soldering time (wave / dip soldering), distance between solder point and base plate 2 mm, 260 C Symbol Values 50 100 125 - 55 ... 125 10 Unit V V C C s
VR VR Tj Tstg ts
Semiconductor Group
1
02.95
SRD 00111Z
Characteristics All data refer to an ambient temperature of 25 C. Parameter Photosensitive area Wavelength of max. sensitivity Quantumn efficiency at = 850 nm Spectral sensitivity = 850 nm = 950 nm Rise and fall time RL = 50 , VR = 50 V, = 850 nm Junction capacitance at f = 1 MHz VR = 0 V VR = 1 V VR = 12 V VR = 20 V 3 dB bandwidth RL = 50 , VR = 50 V, = 850 nm Dark current VR = 20 V, E = 0 Noise equivalent power VR = 20 V, = 850 nm Detectivity VR = 20 V, = 850 nm Temperature coefficient Ip Isolation current, VIS = 100 V Symbol Values 1 850 0.8 0.55 ( 0.45) 0.45 1 A/W A/W ns Unit mm2 nm
A
Smax
S850 S950 tr; tf
C0 C1 C12 C20 fc ID NEP D* TC IIS
13 7 3.3 3 500 1 ( 5) 3.3 x 10-14 3.1 x 1012 0.2 0.1 ( 1)
pF pF pF pF MHz nA W/Hz cmHz/W %/K nA
Semiconductor Group
2
SRD 00111Z
Relative Spectral Sensitivity S = S( )
Photocurrent Ip = Ip (E)
100 90 80
100
10 70 Srel/[%] 60 50 40 30 0.1 20 10 0 400 0.01 0.001 Ip/[uA] 600 L/[nm] 800 1000 1
0.01
0.1
1
10
E/[mW/cm2]
Dark Current IR = IR(VR)
Dark Current IR = IR(TA) E = 0, VR = 20 V
100
1000
10
100
10 1 Ir/[nA] Ir/[nA] 1
0.1 0.1 0.01
0.01
0.001 0 10 20 30 40 50 Vr/[V]
0.001 -50 -25 0 25 Ta/[C] 50 75 100
Semiconductor Group
3
SRD 00111Z
Dark Current IR = IR(VR)
Junction Capacity C = C(VR) E = 0, f = 1 MHz
100000 10000 1000 100
50C 125C
12
10
100C 75C
8 C/[pF]
Ir/[nA]
10
25C
6
1
0C
4
0.1 0.01 0.001 0 10 Vr/[V] 20
-10C
2
0 30 0.1 1 Vr/[V] 10 100
Dark Current IR = IR(VR)
120
100
80 Rs/[Ohm]
60
40
20
0 0 20 Vr/[V] 40 60
Semiconductor Group
4
SRD 00111Z
Package Outlines (Dimensions in mm)
SRD 00111Z
Semiconductor Group
5

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