View MC33198D_1130503.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Freescale Semiconductor Technical Data
Document Number: MC33198 Rev. 2.0, 11/2006
Automotive High-Side TMOS Driver
The MC33198 is a high-side TMOS driver, dedicated to automotive applications. It is used in conjunction with an external power MOSFET for high-side drive applications. The device can drive and protect a large variety of MOSFETs. The device has a CMOS compatible input control, charge pump to drive the MOSFET gate, and fault detection circuitry based on programmable VDS monitoring to detect shorted loads. It also includes a programmable timer function to eliminate undesired switch off due to in rush currents, and a status pin which reports the output status of both on and off MOSFET states. The device uses few external components and offers an economical solution to large current high side switches. It also has PWM capability up to 1kHz.
33198
HIGH-SIDE TMOS DRIVER
Features * Designed for Automotive High Side Driver Application * Works with a Wide Variety of N-Channel Power MOSFETs ORDERING INFORMATION * PWM Capability * On Board Charge Pump Capable of Charging 25nF in less than 1ms Temperature Device Package with No External Components Required Range (TA) * Drive Inductive Load with No External Clamp Circuitry Required MC33198D * CMOS Logic Compatible Input Control -40C to 125C 8 SOICN MCZ33198EF/R2 * TMOS Over Current and Short Circuit Protection * Fault Output to Report an MOSFET Overcurrent Condition * Output Status Available when MOSFET is On or Off * Extended Temperature Range from -40C to 125C * Protected Against Automotive Transients with few External Components * Overvoltage and Undervoltage Shutdown * Pb-Free Packaging Designated by Suffix Code EF
D SUFFIX EF SUFFIX (PB-FREE) 98ASB42564B 8-PIN SOICN
VBAT
33198
VCC DRN INPUT
MCU
5.0V STATUS
GATE SRC LOAD TIMER GND
Figure 1. 33198 Simplified Application Diagram
Freescale Semiconductor, Inc. reserves the right to change the detail specifications, as may be required, to permit improvements in the design of its products.
(c) Freescale Semiconductor, Inc., 2007. All rights reserved.
INTERNAL BLOCK DIAGRAM
INTERNAL BLOCK DIAGRAM
VBAT
5
VCC DRN Rdrn
2
Over Volt Detect Bias Supply Ref Charge Pump 80 A GATE 100 A 10A Power ON + 5V C1 LOGIC C2 Vcc + 15V Rsrc POWER TMOS
Under Volt Detect INPUT
4
7
SRC
MCU
1
Rpu
6
STATUS + C3 -
10A
LOAD
3
GND C timer
8
TIMER
Figure 2. 33198 Simplified Internal Block Diagram and Typical Application
33198
2
Analog Integrated Circuit Device Data Freescale Semiconductor
PIN CONNECTIONS
PIN CONNECTIONS
SRC
1
8
TIMER
DRN
2
7
INPUT
GND
3
6
STATUS
GATE
4
5
VCC
Figure 3. 33198 Pin Connections Table 1. 33198 Pin Definitions
Pin Number 1 2 3 4 5 6 7 8
Pin Name SRC DRN GND GATE VCC STATUS INPUT TIMER
Formal Name Source Drain Ground Gate VCC Status Input Timer
Definition Input to detect MOSFET/load status Input to set overvoltage threshold Ground for the device Output to control the gate of external MOSFET Power for the device Output signal for MOSFET status Control input Inrush Current detection delay timer input
33198
Analog Integrated Circuit Device Data Freescale Semiconductor
3
ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 2. Maximum Ratings All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage to the device.
Ratings ELECTRICAL RATINGS Power Supply Voltage TMOS Source Voltage Comparator Threshold Gate Output Voltage Input Voltage Status ESD Voltage Capability THERMAL RATINGS Storage Temperature Operating Junction Temperature THERMAL RESISTANCE Thermal Resistance J/A Peak Package Reflow Temperature During Reflow
(2), (3) (1)
Symbol
Value
Unit
VCC VSRC VDRN VGATE VIN VST VESD
- 0,6 to 60 - 0,6 to 60 - 0,6 to 60 - 0,6 to 25 - 0,6 to 25 - 0,6 to 10 +/-2000
V V V V V V V
TSTG TJ
-55 to +150 -40 to +150
C C
RJ TPPRT
145 Note 3
C C
Notes 1. ESD testing is performed in accordance with the Human Body Model (HBM) (CZAP = 100 pF, RZAP = 1500 ), the Machine Model (MM) (CZAP = 200 pF, RZAP = 0 ), and the Charge Device Model (CDM), Robotic (CZAP = 4.0pF). 2. 3. Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may cause malfunction or permanent damage to the device. Freescale's Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow Temperature and Moisture Sensitivity Levels (MSL), Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts. (i.e. MC33xxxD enter 33xxx), and review parametrics.
33198
4
Analog Integrated Circuit Device Data Freescale Semiconductor
ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics Characteristics noted under conditions 7.0 V VSUP 20 V, - 40C TA 125C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25C under nominal conditions unless otherwise noted.
Characteristic SRC PIN 1 Leakage Current DRN PIN 2 Threshold Current DRN Leakage, Input Off, VCC Pin Open GATE PIN 4 Output On Voltage at 1ms (Charge Pump ON) Turn Off Current with NO Over VDS condition and VOUT >0.5V with Over VDS condition and VOUT >0.5V Output Off Voltage. (Charge Pump OFF and VCC Pin Open) Gate Discharge Current. (VCC Pin Open) Turn On Time Cl = 25nF ; 7.0V < VCC < 10V ; VOUT > VCC+7.0 Cl = 25nF ; 10V < VCC < 20V ; VOUT > VCC+10 VCC PIN 5 Supply Voltage Range Quiescent Supply Current ; In = 0V at VCC = 7.0V at VCC = 20V Supply Current ; In = 5.0V Over Voltage Threshold Under Voltage Threshold STATUS PIN 6 Output Voltage @ I = 1mA INPUT Pin 7 Input Low Voltage Input High Voltage Input Hysteresis Input Pull Down Resistor. VIN >11V Open Input Voltage VIL VIH VHYS RIN VIOP 3.5 0.8 20 36 1.5 100 1.0 V V V k V VOL 0.1 0.4 1.5 V ICC VOV VUR VCC ICCQ 1.0 22 1.8 2.8 28 6.0 4.0 6.0 35 34 7.0 mA V V 7.0 20 V mA IOFF TON IOUTN IOUTW VOFF 0.0 5.0 0.9 1.0 1.0 A ms 70 5.0 110 10 150 15 A A V VON Vcc + 7.0 Vcc+15 V ITHR ILEAK 54 81 102 10 A A ILSRC -10 10 A Symbol Min Typ Max Unit
33198
Analog Integrated Circuit Device Data Freescale Semiconductor
5
ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued) Characteristics noted under conditions 7.0 V VSUP 20 V, - 40C TA 125C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25C under nominal conditions unless otherwise noted.
Characteristic TIMER PIN 8 Timer Current On Threshold Discharge Current @ VPIN8 = 5.0V Saturation Voltage @ IPIN8 = 1mA ITIME VHTH IDISCH VSAT 7.0 5.2 2.0 10 5.5 5.0 0.15 14 5.8 10 0.4 A V mA V Symbol Min Typ Max Unit
33198
6
Analog Integrated Circuit Device Data Freescale Semiconductor
ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics Characteristics noted under conditions 7.0 V VSUP 18 V, - 40C TA 125C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25C under nominal conditions unless otherwise noted.
Parameter
Vcc = 7.0V Vcc = 14V Vcc = 21V
Unit
TYPICAL RISE TIME (TR) VERSUS GATE EXTERNAL CAPACITOR LOAD AND SUPPLY VOLTAGE (REFER TO Figure 4) C = 1.0nF C = 3.0nF C = 10nF C = 30nF 15 60 140 730 7.0 25 80 270 10 40 90 340 s s s s
TYPICAL FALL TIME (TF) VERSUS GATE EXTERNAL CAPACITOR LOAD AND SUPPLY VOLTAGE (REFER TO Figure 4) C = 1.0nF C = 3.0nF C = 10nF C = 30nF 150 430 1200 4800 230 800 2300 8000 280 950 2750 9200 s s s s
TIMING DIAGRAMS
INPUT Pin 7
Vcc
5V
5
VCC
1
SRC
2
DRN GATE 4
Typically (V CC
0V
6 STATUS
GATE Pin 4
+ 15V)
7 INPUT
TIMER GND
C 8 3
90%
10%
t R
t F
Figure 4. Timing Measurements Test Schematic
33198
Analog Integrated Circuit Device Data Freescale Semiconductor
7
ELECTRICAL CHARACTERISTICS TIMING DIAGRAMS
UNDER VOLTAGE THRESHOLD
< 30V and > 20V
Vbat VCC PIN 5 (V) UNDER VOLTAGE THRESHOLD 0V
5V IN PIN 7 (V) 0V 110A GATE DISCHARGE CURRENT 10A GATE DISCHARGE CURRENT 10A DISCHARGE Vbat + 14V
MOSFET GATE (V)
0V
< Vbat PIN 2 VOLTAGE LOAD VOLTAGE (V) MOSFET SOURCE (V) 0V
10V 5,5V TIMER PIN 8 (V) 0V FAULT PIN 6 (V) 5V 0V
NORMAL SWITCH ON/OFF TEMPORY OVERLOAD PERMANENT OVERLOAD MOSFET OFF LOAD SHORTED TO VBAT OVERVOLTAGE CONDITION UNDERVOLTAGE CONDITION
Figure 5. Descriptive Waveform Diagram
33198
8
Analog Integrated Circuit Device Data Freescale Semiconductor
ELECTRICAL CHARACTERISTICS ELECTRICAL PERFORMANCE CURVES
ELECTRICAL PERFORMANCE CURVES
g
SUPPLY CURRENT (mA)
Ta = -40 C
4 3 2 Ta = 25 C 1 0 5 Ta = 125 C
DRAIN CURRENT (uA)
5
80
Ta = 25 C Ta = - 40 C
78
76 74
Ta = 125 C
72
10 15 20 25
5
10
15
20
25
Vcc, SUPPLY VOLTAGE (V)
Vcc, SUPPLY VOLTAGE (V)
Figure 6. Supply Current versus Supply Voltage. Pin 7 = 0V
FAULT OUTPUT VOLTAGE (V)
Figure 9. Drain Current versus Supply Voltage
2
Ta = 125 C
1.5
SUPPLY CURRENT (mA)
25 20 15 10 5 0 5 10 15 20 Vcc, SUPPLY VOLTAGE (V) 25
1
Ta = 25 C Ta = -40 C
0.5
0
1 2 3 4 FAULT OUTPUT CURRENT (mA)
5
Figure 10. Fault Output Voltage versus Current
40 25C Vg, GATE VOLTAGE (V) 35
Figure 7. Supply Current versus Supply Voltage. Pin 7 = 5.0V
11 TIMER CURRENT (uA) Ta = -40 C
125C -40C
10
30 25 20 15 5
Ta = 25 C 9 Ta = 125 C 8
5
10
15
20
25
20 10 15 Vcc, SUPPLY VOLTAGE (V)
25
Vcc, SUPPLY VOLTAGE (V)
Figure 11. Gate Voltage versus Voltage
Figure 8. Time Current versus Supply Voltage
33198
Analog Integrated Circuit Device Data Freescale Semiconductor
9
ELECTRICAL CHARACTERISTICS ELECTRICAL PERFORMANCE CURVES
40
VCC = 21V
40 35
VCC = 21V
35
GATE VOLTAGE (V)
30 25
VCC = 14V
GATE VOLTAGE (V)
30 25
VCC = 14V
20 15 10 5 0 1 2 3 GATE OUTPUT CURRENT (mA) 4
VCC = 7V
20 15 10
VCC = 7V
5 0 1 2 3 GATE OUTPUT CURRENT (mA) 4
Figure 12. Gate Voltage versus Gate Output Current. TA = 25C.
40
VCC = 21V
Figure 14. Gate Voltage versus Gate Output Current. TA = 40C
35 30 GATE VOLTAGE(V)
35
GATE VOLTAGE (V)
30 25 20 15 10 5 0
VCC = 14V
25 20 15
No Rg
VCC = 7V
10 5
Rg = 68K Rg = 39K Rg = 15K
1 2 3 GATE OUTPUT CURRENT (mA)
4
0 5 7 15 9 11 13 17 Vcc , SUPPLY VOLTAGE (V) 19 21
Figure 13. Gate Voltage versus Gate Output Current. TA = 125C
Figure 15. Gate Voltage versus VCC and RG at TA = 25C
33198
10
Analog Integrated Circuit Device Data Freescale Semiconductor
FUNCTIONAL DESCRIPTION INTRODUCTION
FUNCTIONAL DESCRIPTION
INTRODUCTION
The MC33198 is a high side TMOS driver, dedicated to automotive applications. It is used in conjunction with an external power MOSFET for high side drive applications. The device can drive and protect a large variety of MOSFETs. The device has a CMOS compatible input control, charge pump to drive the MOSFET gate, and fault detection circuitry based on programmable VDS monitoring to detect shorted loads. It also includes a programmable timer function to eliminate undesired switch off due to in rush currents, and a status pin which reports the output status of both on and off MOSFET states. The device uses few external components, and offers an economical solution to large current high side switches. It also has PWM capability up to 1kHz. maintains the gate of the MOSFET below 0.9V when the device has no supply, ensuring that the MOSFET remains off. This passive pulldown current is operating even if device VCC (pin 5) is not powered up.
INPUT CIRCUITRY
The Input pin (pin 7) of the device is CMOS compatible and can be directly connected to a microcontroller. The input current is determined by an internal pull down resistor, typically 36kW. A hysteresis of 0.8 V minimum is present at this input.
OUTPUT STATUS
The device has a status output (pin 6) which has an open collector structure. This pin is used to report the MOSFET overload condition or the LOAD status when the MOSFET is off. The device Pin 1 (Source) is compared to a programmable threshold at Pin 2, in both the on and off state of the MOSFET. This allows the detection of the MOSFET over VDS or over load conditions when the MOSFET is on and the load short to VBAT monitoring, when the MOSFET is in the off state. This status pin is normally connected to a pullup resistor and a micro input, and can drive up to 1.0mA.
POWER SUPPLY
The MC33198 can be supplied from the battery line. It is designed with a 60V technology, making it able to sustain up to 60V transient pulses. In the off state, with pin 7 low, the supply current can be up to 5.0mA, and in operation, pin 7 high, the current up to 25mA. The device has an undervoltage detection and shutdown near 7.0V. Below this value the MOSFET is turned off. There is also a 25V overvoltage detection which switches off the output pin 4 to protect both the MOSFET and the load when VCC is higher than 25V.
TIMER
The Timer pin (pin 8) is used in conjunction with an external capacitor to create a delay between the overload detection and the shutdown of the MOSFET. In case of over load, the internal current source pin 8 will charge the capacitor. When the voltage at pin 8 reaches the 5.5V threshold, the internal C3 comparator will be triggered and switch off the output to protect the MOSFET. The fault and the MOSFET turn off condition are latched and are reset by switching the input off and on. The delay between the overload detection and actual MOSFET turn off is used to allow a temporary overload which will prevent the system from switching off during possible inrush currents or transients.
CHARGE PUMP
The device incorporates a self running charge pump with an internal capacitor and is connected at Gate pin 4. To prevent oscillation, a serial resistor can be added. The charge pump is able to charge a 25nF capacitor in less than 1ms. This allows the MC33198 to have a rapid response time and to drive the external TMOS gate very quickly, allowing fast switching on of the load. The device has an internal 15V zener diode between pin 4 and 1, to clamp the Gate-toSource voltage and protect the MOSFET gate oxide from destruction. See Dynamic Electrical Characteristics on page 7 for details.
BAND GAP AND REFERENCE CURRENTS
The MC33198 has an internal band gap reference voltage which generates all the internal thresholds. This band gap is also used to generate internal reference currents necessary for proper operation of the device. These currents are : Pin 2 : Drain current (typically 80mA). Pin 4 : High and low gate discharge currents (typically 100mA and 10mA). Pin 8 : Timer charge current (10mA typical). All these currents are derived from the same reference voltage and internal resistor. Their accuracy and variability is approximately +-25% over the full temperature and voltage range. In addition, a passive pull down current of 5.0mA
MOSFET PROTECTION AND OUTPUT VOLTAGE MONITORING
The MC33198 has the ability to sense the output MOSFET source voltage and compare it to a predetermined threshold. This threshold is programmable, using the internal reference current of 80mA and an external resistor connected at pin 2 (DRN). The device can monitor the output load voltage, as well as protect the MOSFET in case of overload. The overload detection threshold must be adapted to the MOSFET itself depending on the load to be driven and the thermal capability of the MOSFET. In practice, the maximum acceptable VDS of the MOSFET should be determined and based upon the MOSFET maximum power dissipation.
33198
Analog Integrated Circuit Device Data Freescale Semiconductor
11
FUNCTIONAL DESCRIPTION INTRODUCTION
In addition, the pin 8 capacitor value should be calculated to allow inrush current.
OPERATION WITH INDUCTIVE LOADS
The device can drive the MOSFET during inductive loads switching applications. In this case, a 1.0kW resistor should be connected between source of the MOSFET and device pin 1. The resistor will limit the current flowing into pin 1 and prevent MC33198 from damage while switching the inductive load off. The gate voltage is internally clamped at - Vbe (0.6V typical), and the VDS is limited to VBAT + VBE + VGSON to prevent excessive power dissipation in the MOSFET. The load voltage is limited to VBE + VGSON and allows a reasonable discharge current.
SOURCE (PIN1) AND DRAIN (PIN2) FUNCTIONALITY
These two pins are used to sense the MOSFET and load conditions. Pin 2 is connected to the internal pull down current source of 80mA and to the C2 comparator. An external resistor connected between pin 2 and VBAT creates a voltage drop across this resistor. The voltage drop will be the MOSFET maximum acceptable drain to source voltage and the C2 comparator threshold. Pin 1 is connected to the MOSFET source pin. Two different cases should be considered, MOSFET on or off : When the MOSFET is on and working under normal conditions, the VDS should be less than the voltage developed at pin 2. So, the C2 comparator output is low and the status is high. No current will flow through the pin 8 capacitor. If the MOSFET encounters an overload or if the load is shorted to Gnd, the voltage at the source will cross the pin 2 voltage and go below this pin 2 voltage, thereby turning on the C2 comparator. The comparator will pull the status pin 6 low and will enable the charge of the pin 8 capacitor. When the voltage at the capacitor reaches 5.5V, the C3 comparator will switch off the MOSFET by disabling the charge pump and the 110mA current source. The MOSFET gate will be discharged only by the 10mA current source. The MOSFET is latched off and can be turned back on again by switching the input pin 7 to 0 and back to 1. When the MOSFET is off, we have the same scheme. Under normal conditions, the load should pull the source voltage to Gnd, thus C2 comparator output is high and status pin pulled low. If the load is shorted to VBAT for instance, source pin will be higher than pin 2, The C2 output comparator is low and the status pin is high. This is summarized in Table 5, Status Functionality. Table 5. Status Functionality
INPUT PIN 7 Low Low LOAD C2 STATUS CONDITION SOURCE OUTPUT PIN 6 VOLTAGE COMP Normal Short Circuit to VBAT VPIN2 High Low Low High TIMER PIN 8 Low Charge by 10 A source Low Charge by 10 A source
SWITCHING ON
The MOSFET switching on is ensured by the internal charge pump. The charge pump response time versus the MOSFET gate capacitance is shown in Table 4, Dynamic Electrical Characteristics.
SWITCHING OFF
Here two cases have to be discussed: the MOSFET normally switching off, and the switching off under a fault condition. The normal switching off is done by internal pull down current sources. The value is 110mA and is in fact composed of two current sources in parallel: a 100mA and a 10mA source. The 10mA current is always connected to the gate pin 4 as shown in the Internal Block Diagram on page 2. The 100mA source can be disabled. This is the case when the MOSFET is switched off under fault conditions. The device will disable the 100mA current source and the MOSFET gate will be discharged only by a 10mA current. The time required to switch off the MOSFET will be much longer in this case, and will result in a lower overvoltage at the MOSFET, especially when the device drives high inductive loads.
OFF STATE OPERATION WITHOUT VCC CONNECTION
When pin 7 is in the low state, the MOSFET is off. If VBAT is present, the gate voltage is discharged by the 110mA current source. In the case of a VBAT disconnection, a self sustaining 5.0mA pull down current source is incorporated in the device, to ensure that the MOSFET gate capacitor is discharged and tied below 0.9V. In case of a VCC disconnection, input pin 7 has no effect on the gate voltage, which is maintained below 0.9V. In this case, the status pin is high. Low leakage current at pin 2 (10mA max) allows the operation with the MOSFET and MC33198 pin 2 permanently connected to the battery. VCC and other functions can be switched off from the main battery line. See Figure 18.
High High
Normal Short to GND or Overload
>VPIN2 Low High
High Low
PWM OPERATION
Since the MC33198 charge pump can deliver a high current, the MOSFET gate can be charged fast enough to allow for PWM operations. The maximum PWM frequency is dependent on the MOSFET itself and mainly its gate to the source capacitor value. Depending on the PWM frequency,
33198
12
Analog Integrated Circuit Device Data Freescale Semiconductor
FUNCTIONAL DESCRIPTION INTRODUCTION
the switch off time can be long, compared to the on-switching time response. This is due to the 110mA gate discharge current. To improve this parameter, a resistor can be added in parallel with the gate of the MOSFET. See Figures 16 and 17.
Table 6. Switching Off Characteristics with MOSFET Additional Gate Resistor
RGATE (RG) VCC (V) 7.0 No R 10 14 VGATE (V) 16 23 28 34 14 22 27 33 13 21 26 32 11 17.5 24 28.5 TOFF (sec) 450 700 750 780 160 230 230 220 100 160 160 150 30 50 50 50
Vbat Vbat
20 7.0
4 1 1K
68 k
10 14 20
Rg 3
LOAD
7.0 39 k 10 14 20 7.0
Figure 16. Schematic with RGATE Resistor
5V
15 k
INPUT SIGNAL PIN7
10 14 20
0V
Vgate WITHOUT Rgate
Vcc + 15V typ
0V
Vgate WITH Rgate Toff Toff
Notes 1. Time from negative edge of input signal (Pin 7) to negative edge of gate voltage (Pin 4) measured at 5V threshold. 2. Gate discharge time, not LOAD switching OFF time.L 3. TMOS used is Freescale MTP50N06, load 10 resistor.
REVERSE BATTERY
The device does not sustain reverse battery operation for VCC voltages greater than - 0.6V in magnitude. In application, pin 5 should be protected from reverse battery by connecting a diode in series with the VBAT line.
Figure 17. RGATE Signal Comparison This resistor will reduce (in some way) the charge pump output voltage available for the MOSFET, but the device will still provide enough Gate-to-Source voltage to maintain the MOSFET "on" in good conditions. The resistor will mainly act as an additional discharge current, which will reduce the switch off time of the overall application. See the Table 6, Switching Off Characteristics with MOSFET Additional Gate Resistor and Figure 15, which show the pin 4 voltage depending on the additional gate resistor and the off switching time due to this resistor. If a very low switching time is needed, the resistor has to be an extremely low value, resulting in low gate voltage not high enough to ensure proper MOSFET operation. In this case, a logic level MOSFET can be used. Logic levels will operate with VGS of 5.0V, with the same performance as a standard MOSFET having a 12V VGS. Care should be taken regarding the maximum gate to source voltage of a logic level MOSFET. An additional zener might be necessary to prevent gate oxide damage.
Vbat Vbat
R drn 5 VCC 6 STATUS GATE 4 7 INPUT GND 3 1K SOURCE 1 TIMER 8 DRN 2
LOAD
C
Figure 18. 33198 Reverse Battery
33198
Analog Integrated Circuit Device Data Freescale Semiconductor
13
FUNCTIONAL DESCRIPTION INTRODUCTION
Pin 2, which is normally connected to a resistor, can sustain a reverse battery operation, providing that the DRN resistor is higher than 3.3K. A 1K resistor at pin 1 is also necessary to limit the reverse current flowing through the MOSFET body diode.
OPERATION
When module GND is disconnected, and if the VBAT connection is still present, pin 3 of the MC33198 goes to about 2/3 of VBAT, if additional circuitry is not inserted. With R1/Q1, the Gate/Source voltage of the MOSFET is shorted as soon as pin 3 voltage rises above GND level. See Figure 19, 33198 GND Disconnection Circuitry
5V
Vbat
Vbat
5
Device drive circuitry and interface
6
4
MC33198
IN 7 8 3 1 LOAD
Module Gnd
C
Q1 R1
Additional circuitry to present MOSFET turn-on in case of module Gnd disconnection
R1 = 3,3K Q1 = 2N2222
Figure 19. 33198 GND Disconnection Circuitry
33198
14
Analog Integrated Circuit Device Data Freescale Semiconductor
PACKAGING PACKAGE DIMENSIONS
PACKAGING
PACKAGE DIMENSIONS
For the most current package revision, visit www.freescale.com and perform a keyword search using the "98A" listed below.
D SUFFIX EF SUFFIX (PB-FREE) 8-PIN PLASTIC PACKAGE 98ASB42564B ISSUE U
33198
Analog Integrated Circuit Device Data Freescale Semiconductor
15
REVISION HISTORY
REVISION HISTORY
REVISION 2.0
DATE 11/2006
DESCRIPTION OF CHANGES
* * * * *
Converted to Freescale format. Implemented Revision History page. Removed Comparison of the 33198 TO the 33091 Added part number MCZ33198EF (Pb-Free) to Ordering Information on page 1 Added Peak Package Reflow Temperature During Reflow (2), (3) on page 4
33198
16
Analog Integrated Circuit Device Data Freescale Semiconductor
How to Reach Us:
Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1-800-521-6274 or +1-480-768-2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo 153-0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-441-2447 or 303-675-2140 Fax: 303-675-2150 LDCForFreescaleSemiconductor@hibbertgroup.com
RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale's Environmental Products program, go to http:// www.freescale.com/epp.
Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. FreescaleTM and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc., 2007. All rights reserved.
MC33198 Rev. 2.0 11/2006

▲Up To Search▲

Price & Availability of MC33198D

	To Download MC33198D Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .