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| To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET FS10KM-12A FS10KM-12A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS10KM-12A OUTLINE DRAWING 10 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 6.5 0.3 3 0.3 0.75 0.15 2.54 0.25 2.54 0.25 2.6 0.2 G 10V DRIVE G VDSS ............................................................................... 600V G rDS (ON) (MAX) .............................................................. 0.94 G ID ......................................................................................... 10A GATE DRAIN SOURCE TO-220FN APPLICATION SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 200H VGS = 0V VDS = 0V Conditions Ratings 600 30 10 30 10 35 -55 ~ +150 -55 ~ +150 4.5 0.2 Unit V V A A A W C C V g AC for 1minute, Terminal to case Typical value 2000 2.0 Sep. 2001 MITSUBISHI Nch POWER MOSFET FS10KM-12A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IGS = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 600 30 -- -- 2.5 -- -- 6.0 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3.0 0.72 3.60 10.0 1500 130 35 25 35 190 50 1.5 -- Max. -- -- 10 1 3.5 0.94 4.70 -- -- -- -- -- -- -- -- 2.0 3.57 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50 IS = 5A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 7 5 3 2 40 101 7 5 3 2 7 5 3 2 tw = 10s 100s 1ms 10 ms 30 100 TC = 25C Single Pulse 20 10 10-1 7 5 3 2 DC 23 5 7 101 23 5 7 102 23 57 0 0 50 100 150 200 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 20V,10V,8V 6V OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 20V,10V,8V,6V DRAIN CURRENT ID (A) 16 DRAIN CURRENT ID (A) TC = 25C Pulse Test 8 5V 12 5V 6 8 4 PD = 35W 4 PD = 35W 2 TC = 25C Pulse Test 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS10KM-12A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 TC = 25C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0 TC = 25C Pulse Test DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () 32 1.6 24 ID = 20A 15A 1.2 VGS = 10V 20V 16 10A 0.8 8 5A 0.4 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 40 102 7 5 3 2 FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 32 101 7 5 3 2 TC = 25C,75C,125C 24 16 100 7 5 3 2 VDS = 10V Pulse Test 2 3 5 7 100 2 3 5 7 101 8 0 TC = 25C VDS = 10V Pulse Test 0 4 8 12 16 20 10-1 -1 10 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 5 3 Ciss SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 TCh = 25C VGS = 0V f = 1MHZ Coss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 3 2 td(off) 2 102 7 5 3 2 td(on) tf tr Crss 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 101 7 5 10-1 TCh = 25C VGS = 10V VDD = 200V RGEN = RGS = 50 2 3 5 7 100 2 3 5 7 101 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS10KM-12A HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 GATE-SOURCE VOLTAGE VGS (V) 20 16 SOURCE CURRENT IS (A) VDS = 100V,200V,400V 32 TC = 25C 75C 12 24 125C 8 16 4 TCh = 25C ID = 10A 8 VGS = 0V Pulse Test 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = 10V 7 ID = 5A 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 0 50 100 150 4.0 3.0 100 7 5 3 2 2.0 1.0 10-1 -50 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 = 0.5 2 1.2 100 = 0.2 7 5 = 0.1 3 = 0.05 2 = 0.02 1.0 0.8 PDM = 0.01 tw T D= tw T 10-1 7 5 3 2 0.6 Single Pulse 0.4 -50 0 50 100 150 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) CHANNEL TEMPERATURE Tch (C) Sep. 2001 |
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