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| Ordering number : ENA0519 2SJ538 SANYO Semiconductors DATA SHEET 2SJ538 Features * * P-Channel Silicon MOSFET Load Switching Applications Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings --30 20 --15 --45 1.0 30 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=--1mA, VGS=0V VDS=-30V, VGS=0V VGS=16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=-8A ID=--8A, VGS=-10V ID=--4A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz Ratings min --30 --100 10 --1.0 10 15 24 40 2000 1000 470 30 52 --2.5 typ max Unit V A A V S m m pF pF pF Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O0406PA MS IM TC-00000219 No. A0519-1/4 2SJ538 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-10V, ID=--8A VDS=--10V, VGS=-10V, ID=--8A VDS=--10V, VGS=-10V, ID=--8A IS=--8A, VGS=0V Ratings min typ 20 70 210 140 58 7 17 --1.0 --1.5 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7518-004 6.5 5.0 2.3 Package Dimensions unit : mm (typ) 7003-004 6.5 5.0 2.3 1.5 4 1.5 0.5 0.5 4 5.5 7.0 5.5 7.0 0.8 1.6 1.2 7.5 1 0.5 0.6 2 0.8 3 0 to 0.2 1.2 0.6 2.5 0.85 0.7 0.85 0.5 1.2 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 2.3 2.3 Switching Time Test Circuit VDD= --15V VIN 0V --10V VIN PW=10s D.C.1% ID= --8A RL=1.87 D VOUT G P.G 50 2SJ538 S No. A0519-2/4 2SJ538 --20 --18 --16 ID -- VDS --10 V --6 V --5 V --20 --18 --16 ID -- VGS VDS= --10V --8 V Drain Current, ID -- A --14 --12 --10 --8 --6 --4 --2 0 0 Drain Current, ID -- A --15 --4V V --14 --12 --10 --8 VGS= --3V --4 --2 0 --0.2 --0.4 --0.6 --0.8 --1.0 IT11532 80 0 --0.5 --1.0 --1.5 --2.0 Ta= 7 --2.5 5C --6 25 C --3.0 --3.5 --25 C --4.0 --4.5 Drain-to-Source Voltage, VDS -- V 80 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT11533 RDS(on) -- Ta Ta=25C 70 60 50 40 30 20 10 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 70 60 50 40 30 20 10 0 --60 ID= --4A --8A --4A, I D= = --4 VGS V 8A, V G I D= -- --10 S= V --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 3 yfs -- ID IT11534 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 Ambient Temperature, Ta -- C IT11535 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 2 10 VDS= --10V 3 2 1.0 7 5 3 2 0.1 --0.01 = Ta 5 --2 25 C C 75 C Source Current, IS -- A 7 5 5C 25C 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 7 5 5 7 --1.0 IT11536 --0.01 7 5 3 2 --0.001 --0.2 --0.4 Ta= 7 --0.6 --25 --0.8 C --1.0 --1.2 IT11537 SW Time -- ID 10000 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD= --15V VGS= --10V td(off) 7 5 Switching Time, SW Time -- ns 3 2 tf Ciss, Coss, Crss -- pF 3 2 Ciss 100 7 5 3 2 1000 7 5 3 2 Coss tr Crss td(on) 2 3 5 7 --1.0 2 3 5 --10 IT11538 7 10 --0.1 100 0 --5 --10 --15 --20 --25 --30 IT11539 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V No. A0519-3/4 2SJ538 --10 --9 VGS -- Qg VDS= --10V ID= --8A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --8 --7 --6 --5 --4 --3 --2 --1 0 0 10 20 30 40 50 60 IT11540 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ASO IDP= --45A ID= --15A 100s DC 10 1m s op ms era tio n Operation in this area is limited by RDS(on). --0.01 --0.01 Tc=25C Single pulse 23 5 7 --0.1 23 5 7 --1.0 23 5 7 --10 23 5 Total Gate Charge, Qg -- nC 1.2 PD -- Ta Drain-to-Source Voltage, VDS -- V 35 IT11545 PD -- Tc Allowable Power Dissipation, PD -- W 1.0 30 25 0.8 20 0.6 15 0.4 10 0.2 5 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 0 Amibient Tamperature, Ta -- C IT11546 Case Tamperature, Tc -- C IT11547 Note on usage : Since the 2SJ538 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2006. Specifications and information herein are subject to change without notice. PS No. A0519-4/4 |
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