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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
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Next Data Sheet Bulletin I25187/A
ST333C..L SERIES
INVERTER GRADE THYRISTORS Features
Metal case with ceramic insulator International standard case TO-200AC (B-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance
Hockey Puk Version
620A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
case style TO-200AC (B-PUK)
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM /V RRM tq range TJ
ST333C..L
620 55 1230 25 11000 11500 605 553 400 to 800 10 to 30 - 40 to 125
Units
A C A C A A KA2s KA2s V s
C
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ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
Index
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V DRM /V RRM , maximum repetitive peak voltage V
VRSM , maximum non-repetitive peak voltage V
500
I DRM /I RRM max.
@ TJ = TJ max.
mA
50
04 ST333C..L 08
400 800
900
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Heatsink temperature Equivalent values for RC circuit 1430 1670 1080 530 50 V DRM 50 40
ITM 180oel 1250 1170 880 400 50 50 55 2340 2310 2090 1190 50 V DRM 40
ITM 100s 1940 2010 1800 990 50 55 6310 3440 2040 990 50 V DRM 40
ITM
Units
5620 5030 1750 800 50 55
A
V A/s C
10 / 0.47F
10 / 0.47F
10 / 0.47F
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one half cycle, non-repetitive surge current
ST333C..L
620 (305) 55 (75) 1230 11000 11500 9250 9700
Units Conditions
A C 180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2s t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
I 2t
Maximum I2t for fusing
605 553 428 391
I 2 t
Maximum I2t for fusing
6050
t = 0.1 to 10ms, no voltage reapplied
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Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-state Power Loss Characteristics
Fig. 6 - On-state Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
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Fig. 8 - Maximum Non-repetitive Surge Current
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Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Fig 13 - Frequency Characteristics
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Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
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10 0
Index
( 1) ( 2) ( 3) ( 4) (a ) PG PG PG PG M M M M = = = =
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10W , 20W , 4 0W , 60W , tp tp tp tp = = = = 20m s 10m s 5m s 3 .3 m s
In st a n t a n e o u s G a t e V o lt a g e ( V )
10
Re c ta n g u la r g a t e p u lse a ) Re c o m m e n d e d lo a d lin e fo r ra t e d d i/ d t : 2 0 V , 1 0 o h m s; t r< = 1 s b ) Re c o m m e n d e d lo a d lin e fo r < = 3 0 % ra t e d d i/ d t : 1 0 V , 10 o h m s t r< = 1 s (b )
Tj= -40 C
Tj= 25 C
Tj= 125 C
1 VGD IG D
( 1)
(2)
(3 ) (4 )
D e v ic e : ST33 3 C ..L Se rie s Fre q u e n c y Lim ite d b y PG ( A V ) 0.1 0.0 01 0.01 0.1 1 10 100
In st a n ta n e o u s G a te C u rre n t ( A )
Fig. 17 - Gate Characteristics
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On-state Conduction
Parameter
V TM Max. peak on-state voltage voltage V T(TO)2 High level value of threshold voltage r t1 r t2 IH IL Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current
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ST333C..L
1.96 0.91 0.93 0.58
Units
Conditions
ITM= 1810A, TJ = TJ max, tp = 10ms sine wave pulse
V T(TO)1 Low level value of threshold
V
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max.
m 0.58 600 1000 mA
T J = 25C, I T > 30A T J = 25C, V A= 12V, Ra = 6, I G= 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time Max. turn-off time Min 10
ST333C..L
1000 1.1 Max 30
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/s VR = 50V, tp = 500s, dv/dt: see table in device code
s
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST333C..L
500 50
Units
V/s mA
Conditions
TJ = TJ max. linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST333C..L
60 10 10 20
Units
W A
Conditions
TJ = TJ max., f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -VGM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
TJ = TJ max, tp 5ms
TJ = 25C, VA = 12V, Ra = 6 V mA V TJ = TJ max, rated VDRM applied
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Thermal and Mechanical Specification
Parameter
TJ Tstg Max. operating temperature range Max. storage temperature range
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ST333C..L
-40 to 125 -40 to 150 0.11 0.05 0.011 0.005 9800 (1000)
Units Conditions
C DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
K/W N (Kg) g
wt
Approximate weight Case style
250
TO - 200AC (B-PUK)
See Outline Table
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction
Single Side Double Side 0.012 0.014 0.018 0.026 0.045 0.010 0.015 0.018 0.027 0.046 Single Side Double Side 0.008 0.014 0.019 0.027 0.046 0.008 0.014 0.019 0.028 0.046
Units
Conditions
K/W
TJ = TJ max.
Ordering Information Table
Device Code
ST
1 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk
33
2
3
3
C
4
08
5
L
6
H
7
K
8
1
9 10
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - L = Puk Case TO-200AC (B-PUK) 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection) dv/dt - tq combinations available
dv/dt (V/s) 10 12 15 18 20 25 30 20 CN CM CL CP CK --50 DN DM DL DP DK --100 EN EM EL EP EK --200 -FM * FL * FP FK FJ -400 --HL HP HK HJ HH
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) tq (s)
*Standard part number.
All other types available only on request.
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Outline Table
0.7 (0.03) MIN. 2 7 (1 .0 6 ) M AX .
Index
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34 (1.34) DIA. MAX. TWO PLACES
PIN RECEPTACLE AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
6.2 (0.24) MIN.
20 5 5 8 .5 (2 .3 ) D IA. M AX . 4.7 (0.18)
36.5 (1.44) 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN.
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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