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Preliminary
Product Description
Stanford Microdevices' SGA-5589 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.9V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 ohm impedance, the SGA-5589 requires only DC blocking and bypass capacitors for external components.
30
SGA-5589
DC-4000 MHz Silicon Germanium HBT Cascadeable Gain Block
Small Signal Gain vs. Frequency
25
dB
20
Product Features * DC-4000 MHz Operation * Single Voltage Supply * High Output Intercept: +33 dBm typ. at 850 MHz * Low Current Draw: 60mA at 3.9V typ. * Low Noise Figure: 3dB typ. at 850 MHz Applications * Oscillator Amplifiers * PA for Low Power Applications * IF/ RF Buffer Amplifier * Drivers for CATV Amplifiers
Units Min. Typ. 18.2 16.2 15.1 32.9 29.2 27.7 24.1 20.8 19.5 4000 1.6:1 1.6:1 27.3 25.5 24.1 3.4 3.9 97 Max. dB m dB m dB m dB m dB m dB m dB dB dB MHz
15
10 0 1 2 3 4 5 6
Frequency GHz
Parameters: Test Conditions: Z0 = 50 Ohms, ID = 60 mA, T = 25oC Output Power at 1dB Compression
Symbol
P 1dB
f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz
IP3
Third Order Intercept Point Power out per tone = 0 dBm
S 21 Bandwidth S11 S 22 S 12 NF VD Rth,j-l
Small Signal Gain (Determined by S11, S22 Values) Input VSWR Output VSWR Reverse Isolation Noise Figure, ZS = 50 Ohms Device Voltage Thermal Resistance (junction - lead)
f = DC-4000 MHz f = DC-4000 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 1950 MHz
dB dB dB dB V
o
C/W
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 1
http://www.stanfordmicro.com
EDS-101443 Rev A
Preliminary Preliminary SGA-5589 DC-4000 MHz 3.9V SiGe Amplifier Absolute Maximum Ratings
Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth, j-l
Parameter Supply Current Operating Temperature Maximum Input Power Storage Temperature Range Operating Junction Temperature Value 120 -40 to +85 +5 -40 to +150 +150 Unit mA C dB m C C
Key parameters, at typical operating frequencies:
Typical Parameter 500 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Reverse Isolation 850 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Reverse Isolation 1950 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Reverse Isolation 2400 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Reverse Isolation 25 C
o
Test Condition Unit dB dB dB m dB m dB dB dB dB dB m dB m dB dB dB dB dB m dB m dB dB dB dB dB m dB m dB dB (ID = 60 mA, unless otherw ise noted)
24.9 2.8 31.6 17.9 20.0 27.2 24.1 3.0 32.9 18.2 16.9 27.3 20.8 3.4 29.2 16.2 13.2 25.5 19.5 3.6 27.7 15.1 12.5 24.1
ZS = 50 Ohms Tone spacing = 1 MHz, Pout per tone = 0 dBm
ZS = 50 Ohms Tone spacing = 1 MHz, Pout per tone = 0 dBm
ZS = 50 Ohms Tone spacing = 1 MHz, Pout per tone = 0 dBm
ZS = 50 Ohms Tone spacing = 1 MHz, Pout per tone = 0 dBm
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 2
http://www.stanfordmicro.com
EDS-101443 Rev A
Preliminary Preliminary SGA-5589 DC-4000 MHz 3.9V SiGe Amplifier
Pin # 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. GND Connection to ground. Use via holes for best performance to reduce lead inductance. Place vias as close to ground leads as possible. RF OUT/Vcc RF output and bias pin. Bias should be supplied to this pin through an external series resistor and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. GND Same as Pin 2. Function RF IN Description Device Schematic
2
3
4
Application Schematic for Operation at 850 MHz
Recommended Bias Resistor Values Supply Voltage(Vs) Rbias (Ohms) 5V 18 7.5V 62 9V 82 12V 130
1uF
68pF
Rbias VS
For 7.5V operation or higher, a resistor with a power handling capability of 1/2W or greater is recommended. 50 ohm microstrip
33nH 2 1 3 100pF 4 100pF
50 ohm microstrip
Application Schematic for Operation at 1950 MHz
1uF 22pF Rbias VS
22nH
50 ohm microstrip
2 1 3 68pF 4 68pF
50 ohm microstrip
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 3
http://www.stanfordmicro.com
EDS-101443 Rev A
Preliminary Preliminary SGA-5589 DC-4000 MHz 3.9V SiGe Amplifier
S21, ID = 60 mA, T = +25C
30 25
-10 -15
S12, ID = 60 mA, T = +25C
dB
20 15 10 0 1 2 3 4 5 6
dB -20
-25 -30 0 1 2 3 4 5 6
Frequency GHz
Frequency GHz
S11, ID = 60 mA, T = +25C
0
S22, ID = 60 mA, T = +25C
0 -10
dB
-10
dB
-20
-20 -30
0 1 2 3 4 5 6
-30
0
1
Frequency GHz
2 3 4 Frequency GHz
5
6
S11, ID=60mA, Ta=25C
Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz
S22, ID=60mA, Ta=25C
Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz
6 GHz
6 GHz
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 4
http://www.stanfordmicro.com
EDS-101443 Rev A
Preliminary Preliminary SGA-5589 DC-4000 MHz 3.9V SiGe Amplifier
S21, ID = 60 mA, T = -40C S12, ID = 60 mA, T = -40C
30 25
-10 -15
dB 20
15 10 0 1 2 3 4 5 6
dB
-20 -25 -30 0 1 2 3 4 5 6
Frequency GHz
Frequency GHz
S11, ID = 60 mA, T = -40C
0 0 -10
S22, ID = 60 mA, T = -40C
-10
dB
-20
dB
-20 -30 -40
-30 0 1 2 3 4 5 6
0
1
2
3
4
5
6
Frequency GHz
Frequency GHz
S11, ID = 60 mA, T = -40C
Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz
S22, ID = 60 mA, T = -40C
Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz
6 GHz
6 GHz
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 5
http://www.stanfordmicro.com
EDS-101443 Rev A
Preliminary Preliminary SGA-5589 DC-4000 MHz 3.9V SiGe Amplifier
S21, ID = 60 mA, T = +85C
30 25 -10 -15
S12, ID = 60 mA, T = +85C
dB 20
15 10 0 1 2 3 4 5 6
dB
-20 -25 -30 0 1 2 3 4 5 6
Frequency GHz
Frequency GHz
S11, ID = 60 mA, T = +85C
0 0
S22, ID = 60 mA, T = +85C
-10
-10
dB
-20
dB
-20
-30 0 1 2 3 4 5 6
-30 0 1 2 3 4 5 6
Frequency GHz
Frequency GHz
S11, ID = 60 mA, T = +85C
Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz
S22, ID = 60 mA, T = +85C
Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz
6 GHz 6 GHz
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 6
http://www.stanfordmicro.com
EDS-101443 Rev A
Preliminary Preliminary SGA-5589 DC-4000 MHz 3.9V SiGe Amplifier
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
Part Number Ordering Information
Part Number SGA-5589 Reel Siz e 13" Devices/Reel 3000
Part Symbolization The part will be symbolized with "A55" designator on the top surface of the package.
Package Dimensions
Pi n # 1 2 3 4
Function RFin Gnd RFout/Vcc Gnd
1 4
A55
2 3
PCB Pad Layout
DIMENSIONS ARE IN INCHES [MM]
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 7
http://www.stanfordmicro.com
EDS-101443 Rev A

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