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| QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor October 2006 QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor Features Tight production distribution Steel lead frames for improved reliability in solder Description The QSC112/113/114 is a silicon phototransistor encapsulated in an infrared transparent, black T-1 package. PACKAGE DIMENSIONS mounting Good optical-to-mechanical alignment Plastic package is infrared transparent black to attenuate visible light Can be used with QECXXX LED Black plastic body allows easy recognition from LED Package Dimensions 0.116 (2.95) REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) EMITTER 0.100 (2.54) NOM Schematic COLLECTOR 0.155 (3.94) 0.018 (0.46) SQ. (2X) Notes: 1. Dimensions of all drawings are in inches (mm). 2. Tolerance is 0.10 (.25) on all non-nominal dimensions unless otherwise specified. EMITTER (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com QSC112, QSC113, QSC114 Rev. 1.0.1 QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor Absolute Maximum Ratings (TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Units C C C C V V mW Notes: 1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. Electrical/Optical Characteristics (TA =25C) Symbol Parameter PS ICEO BVCEO BVECO IC(ON) Peak Sensitivity Wavelength Reception Angle Collector-Emitter Dark Current Collector-Emitter Breakdown Emitter-Collector Breakdown On-State Collector Current QSC112 On-State Collector Current QSC113 On-State Collector Current QSC114 VCE(sat) tr tf Saturation Voltage Rise Time Fall Time Ee = 0.5 mW/cm2, IC = 0.5 mA(5) VCC = 5 V, RL = 100 , IC = 2 mA 5.0 5.0 VCE = 10 V, Ee = 0 IC = 1 mA IE = 100 A Ee = 0.5 mW/cm2, VCE = 5 V(5) 30 5 1 2.40 4.00 0.4 V s 4 9.60 Test Conditions Min. Typ. 880 8 Max. Units nm 100 nA V V mA Note: 5. = 880 nm, AlGaAs. 2 QSC112, QSC113, QSC114 Rev. 1.0.1 www.fairchildsemi.com QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor Typical Performance Curves Figure 1. Light Current vs. Radiant Intensity 102 VCE = 5V GaAs Light Source Figure 2. Angular Response Curve 110 100 90 80 70 60 50 40 30 20 10 0 1.0 IC(ON) - Light Current (mA) 120 130 10 1 140 150 160 170 180 1.0 10 -1 100 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 0.1 Ee - Radiant Intensity (mW/cm 2) 1 Figure 3. Dark Current vs. Collector - Emitter Voltage 101 101 Figure 4. Light Current vs. Collector - Emitter Voltage Ie = 1mW/cm 2 I CEO - Dark Current (nA) 100 I L - Normalized Light Current Ie = 0.5mW/cm 2 100 Ie = 0.2mW/cm 2 Ie = 0.1mW/cm 2 10-1 10-1 Normalized to: VCE = 5V Ie = 0.5mW/cm 2 TA = 25 oC 10-2 0.1 10-2 10-3 0 5 10 15 20 25 30 1 10 VCE - Collector-Emitter Voltage (V) VCE - Collector-Emitter Voltage (V) Figure 5. Dark Current vs. Ambient Temperature 104 Normalized to: VCE = 25V I CEO - Normalized Dark Current 103 TA = 25 C o VCE = 25V VCE = 10V 102 101 100 10-1 25 50 75 100 o TA - Ambient Temperature ( C ) 3 QSC112, QSC113, QSC114 Rev. 1.0.1 www.fairchildsemi.com QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production 4 QSC112, QSC113, QSC114 Rev. 1.0.1 www.fairchildsemi.com |
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