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DG201HS
Vishay Siliconix
High-Speed Quad SPST CMOS Analog Switch
FEATURES
D D D D D D D Fast Switching--tON: 38 ns Low On-Resistance: 25 W Low Leakage: 100 pA Low Charge Injection TTL/CMOS Logic Compatible Single Supply Compatibility High Current Rating: -30 mA
BENEFITS
D D D D D D D Faster Throughput Higher Accuracy Reduced Pedestal Error Upgrades Existing Designs Simple Interfacing Replaces HI201HS, ADG201HS Space Savings (TSSOP)
APPLICATIONS
D D D D D D D D D Data Acquisition Hi-Rel Systems Sample-and-Hold Circuits Communication Systems Automatic Test Equipment Integrator Reset Circuits Choppers Gain Switching Avionics
DESCRIPTION
The DG201HS is an improved monolithic device containing four independent analog switches. It is designed to provide high speed, low error switching of analog signals. Combining low on-resistance (25 W) with high speed (tON: 38 ns), the DG201HS is ideally suited for high speed data acquisition requirements. To achieve high voltage ratings and superior switching performance, the DG201HS is built on a proprietary high-voltage silicon-gate process. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when on, and blocks input voltages to the supply values, when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Dual-In-Line, SOIC and TSSOP
D1 IN1 D1 S1 V- GND S4 D4 IN4 1 2 3 4 5 6 7 8 Top View 16 15 14 13 12 11 10 9 IN2 D2 S1 S2 V- V+ NC NC S3 D3 IN3 GND S4 7 8 6 Key 3 4 5 2 IN1
LCC
NC 1 IN2 20 D2 19 18 17 16 15 14 S2 V+ NC NC S3 Logic "0" v 0.8 V Logic "1" w 2.4 V
TRUTH TABLE
Logic
0 1
Switch
ON OFF
9 D4
10 IN4
11
12
13 D3
NC IN3 Top View
Document Number: 70038 S-52433--Rev. F, 06-Sep-99
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DG201HS
Vishay Siliconix
ORDERING INFORMATION
Temp Range Package
16-Pin Plastic DIP -40 to 85 C 40 85_C 16-Pin Narrow SOIC 16-Pin TSSOP 16-Pin CerDIP -55 to 125_C LCC-20 DG201HSAZ/883
Part Number
DG201HSDJ DG201HSDY DG201HSDQ DG201HSAK/883
ABSOLUTE MAXIMUM RATINGS
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V-) -4 V to (V+) +4 V or 30 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature (A Suffix) . . . . . . . . . . . . . . . . . . . -65 to 150_C (D Suffix) . . . . . . . . . . . . . . . . . . . -65 to 125_C Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6 mW/_C above 75_C. d. Derate 12 mW/_C above 75_C. e. Derate 7.6 mW/_C above 75_C. 16-Pin CerDIPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW 16-Pin Narrow Body SOIC and TSSOPe . . . . . . . . . . . . . . . . . . . . . . . 600 mW LCC-20d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+ 5V Reg Level Shift/ Drive INX V- V+
SX
DX
GND V-
FIGURE 1.
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Document Number: 70038 S-52433--Rev. F, 06-Sep-99
DG201HS
Vishay Siliconix
SPECIFICATIONSa
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance rDS(on) Match IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) V+ = 16.5 V, V- = -16.5 V VD = "15.5 V VS = #15.5 V V+ = 16.5 V, V- = -16.5 V VS = VD = #15.5 V VANALOG rDS(on) IS = -10 mA, VD = "8.5 V V+ = 13.5 V, V- = -13.5 V Full Room Full Room Room Full Room Full Room Full 25 3 0.1 0.1 0.1 -1 -60 -1 -60 -1 -60 1 60 1 60 1 60 -1 -20 -1 -20 -1 -20 1 20 1 20 1 20 nA A V- V+ 50 75 V- V+ 50 75 V W %
A Suffix
-55 to 125_C
D Suffix
-40 to 85_C
Symbol
V+ = 15 V, V- = -15 V VIN = 3 V, 0.8 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
Digital Control
Input, High Voltage Input, Low Voltage Input Capacitance Input Current VINH VINL Cin IINL or IINH VIN under test = 0.8 V, 3 V Full Full Full Full 5 -1 1 -1 1 2.4 0.8 2.4 0.8 pF mA V
Dynamic Characteristics
Turn-On Time tON tOFF1 tOFF2 Output Settling Time to 0.1% Charge Injection OFF Isloation Crosstalk (Channel-to-Channel) Source Off Capacitance Drain Off Capacitance Channel On Capacitance Drain-to-Source Capacitance ts Q OIRR CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W RL = 1 kW, CL = 10 pF f = 100 kHz Any Other Channel Switches RL = 1 kW, CL = 10 pF f = 100 kHz RL = 1 kW, CL = 35 pF VS = "10 V, VINH = 3 V See Figure 2 Room Full Room Full Room Room Room Room 48 30 150 180 -5 85 dB Room Room Room VS, VD = 0 V, f = 1 MHz V MH Room Room 100 8 8 pF F 30 0.5 pC 60 75 50 70 60 75 50 70 ns
Turn-Off Time
XTALK CS(off) CD(off) CD(on) CDS(off)
Power Supplies
Positive Supply Current Negative Supply Current Power Consumptionc I+ I- PC V+ = 15 V, V- = -15 V VV 15 VIN = 0 or 5 V Room Full Room Full Full 4.5 10 3.5 -6 240 -6 240 mW 10 mA
Document Number: 70038 S-52433--Rev. F, 06-Sep-99
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DG201HS
Vishay Siliconix
SPECIFICATIONSa FOR SINGLE SUPPLY
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) + IS(on) IS = -10 mA, VD = 8.5 V V+ = 10.8 V V+ = 16.5 V, VS = 0.5 V, 10 V , , VD = 10 V, 0.5 V V 05 Full Room Full Room Full Room Full Room Full 65 0.1 0.1 0.1 -1 -60 -1 -60 -1 -60 0 V+ 90 120 1 60 1 60 1 60 -1 -20 -1 -20 -1 -20 0 V+ 90 120 1 20 1 20 1 20 nA A V W
A Suffix
-55 to 125_C
D Suffix
-40 to 85_C
Symbol
V+ = 10.8 V to 16.5 V 10 8 16 5 V- = GND = 0 V VIN = 3 V, 0.8 Vf
Tempb
Typc
Mind Maxd Mind Maxd
Unit
V+ = 16.5 V, VD = 0.5 V, 10 V
Digital Control
Input, High Voltage Input, Low Voltage Input Capacitance Input Current VINH VINL Cin IINL or IINH V+ = 16.5 V VIN under test = 0.8 V, 3 V Full Full Full Full 5 -1 1 -1 1 2.4 0.8 2.4 0.8 V pF mA
Dynamic Characteristics
Turn-On Time tON tOFF1 tOFF2 Output Settling Time to 0.1% Charge Injection Off Isloation Crosstalk (Channel-to-Channel) Source Off Capacitance Drain Off Capacitance Channel On Capacitance ts Q OIRR CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W RL = 1 kW, CL = 10 pF f = 100 kHz Any Other Channel Switches RL = 1 kW, CL = 10 pF f = 100 kHz f = 1 MHz Room VANALOG = 0 V Room 10 30 pF F RL = 1 kW, CL = 35 pF, VS = 2 V kW F V= 10.8 V, See Figure 2 Room Full Room Full Room Room Room Room 150 180 10 85 dB Room Room 100 10 pC 50 70 50 70 50 70 50 70 ns
Turn-Off Time
XTALK CS(off) CD(off) CD(on)
Power Supplies
Positive Supply Current Power Consumptionc I+ PC V+ = 15 V, VIN = 0 or 5 V Full Full 10 150 10 150 mA mW
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function.
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Document Number: 70038 S-52433--Rev. F, 06-Sep-99
DG201HS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Power Supply Voltages
70 r DS(on) Drain-Source On-Resistance ( W ) - 60 50 40 "10 V 30 20 "20 V 10 0 -20 -16 -12 -8 -4 0 4 8 12 16 20 VD - Drain Voltage (V) "15 V r DS(on) Drain-Source On-Resistance ( W ) - 50 V+ = 15 V V- = -15 V 40 125_C 30 85_C 25_C 20 0_C -55_C 10
rDS(on) vs. VD and Temperature
"5 V
0 -15
-10
-5
0
5
10
15
VD - Drain Voltage (V)
rDS(on) vs. VD and Single Power Supply Voltages
180 r DS(on) Drain-Source On-Resistance ( W ) - 160 140 120 100 80 10 V 60 40 20 0 0 2 4 6 8 10 12 14 16 VD - Drain Voltage (V) 12 V 15 V 7V Leakage V+ = 5 V
Leakage Currents vs. Temperature
10 nA
1 nA
ID(on) 100 pA IS(off), ID(off)
10 pA -60 -40 -20
0
20
40
60
80
100 120 140
Temperature (_C)
Input Switching Threshold vs. Supply Voltage
2.5 55
Switching Time vs. Power Supply Voltage
2 Switching Time (ns)
50
V TH ( V )
1.5
45
1
40
tON
0.5
35
tOFF
0 4 6 8 10 12 14 16 18 20 Positive Supplies (V)
30 "4 "6 "8 "10 "12 "14 "16 "18 "20
Supply Voltage (V) www.vishay.com S FaxBack 408-970-5600
Document Number: 70038 S-52433--Rev. F, 06-Sep-99
4-5
DG201HS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Times vs. Temperature
45 V+ = 15 V V- = -15 V 40 Switching Time (ns) 55 35 t ON t OFF (ns) , 50 45 40 25 35 tOFF 20 -55 30 -25 0 25 50 75 100 125 4 6 8 10 12 14 16 18 20 Temperature (_C) V+ - Positive Supply (V) tON tON 65 60
Switching Times vs. Single Supply Voltage
30
tOFF
Switching Times vs. Temperature
50 V+ = 10.8 V V- = 0 V 45 Switching Time (ns) Chargie Injection (pC) 20
Charge Injection vs. Source Voltage
V+ = 15 V, V- = 0 V 10
40
tON
0
35 tOFF 30
-10 V+ = 15 V V- = -15 V
-20
25
-30
20 -55 -25 0 25 50 75 100 125
-40 -15 -10 -5 0 5 10 15
Temperature (_C)
VS - Source Voltage (V)
Off Isolation vs. Frequency
120 110 100 90 OIRR 80 70 60 50 40 10 k RL = 1 kW RL = 100 W V+ = 15 V V- = -15 V
100 k
1M
10 M
f - Frequency (Hz)
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Document Number: 70038 S-52433--Rev. F, 06-Sep-99
DG201HS
Vishay Siliconix
TEST CIRCUITS
+15 V
V+ "10 V S IN 3V GND V- RL 1 kW CL 35 pF D VO
Logic Input
3V 50% 0V tOFF1 VS 90% 10% tON tOFF2 tr <20 ns tf <20 ns
Switch Input Switch Output
VO
-15 V CL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on)
FIGURE 2. Switching Time
+15 V
Rg
V+ S IN D CL 1 nF V- VO VO
DVO
3V GND
INX SWON OFF
-15 V
Q = DVO x CL
FIGURE 3. Charge Injection
C +15 V C
V+
+15 V
V+ VS VO Rg = 50 W 0V, 3 V S1 IN1 S2 D2 RL GND -15 V -15 V Off Isolation = 20 log VS VO XTALK Isolation = 20 log C = RF bypass VS VO V- C D1 50 W
VS Rg = 50 W 0V, 3 V
S
D
IN GND V- C
RL
NC 0V, 3 V
VO
IN2
FIGURE 4. Off Isolation
FIGURE 5. Crosstalk
Document Number: 70038 S-52433--Rev. F, 06-Sep-99
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DG201HS
Vishay Siliconix
APPLICATIONS
A high-speed, low-glitch analog switch such as Vishay Siliconix's DG201HS improves the accuracy and shortens the acquisition and settling times of a sample-and-hold circuit.
Input Buffer VANALOG
DG201HS
JFET Buffer OUTPUT to A/D Converter
Si581
CH (Polystyrene)
SAMPLE/HOLD
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Document Number: 70038 S-52433--Rev. F, 06-Sep-99
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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