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| LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode BAW56LT1 3 ANODE 1 CATHODE 2 CATHODE 1 2 3 MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF I FM(surge) Symbol PD Value 70 200 500 Max 225 1.8 556 300 Unit Vdc mAdc mAdc Unit mW mW /C C/W mW CASE 318-08, STYLE12 SOT- 23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (1) T A = 25 C erate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R JA PD R JA T J , T stg 2.4 mW /C 417 C/W -55 to +150 C DEVICE MARKING BAW56LT1 = A1 ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) (EACH DIODE) Characteristic Symbol V (BR) IR - - - - 30 2.5 50 2.0 Min 70 Max - Unit Vdc Adc OFF CHARACTERISTICS Reverse Breakdown Voltage (I (BR) = 100 Adc) Reverse Voltage Leakage Current (V R = 25 Vdc, T J = 150 C) (V R = 70 Vdc) (V R = 70 Vdc, T J = 150 C) Diode Capacitance (V R = 0, f = 1.0 MHz) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) (Figure 1) R L = 100 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. C V D pF mVdc F t rr - - - - - 715 855 1000 1250 6.0 ns G13-1/2 LESHAN RADIO COMPANY, LTD. LT B A W 5 6 LT 1 +10 V 820 2.0 k 0.1F tr tp 10% t IF t rr t 100 H IF 0.1 F 50 OUTPUT PULSE GENERATOR DUT 50 INPUT SAMPLING OSCILLOSCOPE 90% i R(REC) = 1.0 mA INPUT SIGNAL V R IR OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p t rr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH CATHODE 100 10 T A = 150C I F , FORWARD CURRENT (mA) T A = 85C 10 I R , REVERSE CURRENT (A) 1.0 T A = 125C T A = - 40C 0.1 T A = 85C T A = 55C 1.0 T A = 25C 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0 10 T A = 25C 20 30 40 50 V F , FORWARD VOLTAGE (VOLTS) V R , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage 1.75 Figure 3. Leakage Current C D ,DIODE CAPACITANCE (pF) 1.5 1.25 1.0 0.75 0 2 4 6 8 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance G13-2/2 |
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