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| LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Cathode BAV70LT1 3 1 ANODE 3 CATHODE 2 ANODE 1 2 CASE 318-08, STYLE 9 SOT-23 (TO-236AB) DEVICE MARKING BAV70LT1 = A4 MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current I Symbol VR IF FM(surge) Value 70 200 500 Unit Vdc mAdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (1) T A = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C R JA PD R JA T J , T stg ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I (BR) = 100 Adc) Reverse Voltage Leakage Current (V R = 25 Vdc, T J = 150C) (V R = 70 Vdc) (V R = 70 Vdc, T J = 150C) Diode Capacitance (V R = 0, f = 1.0 MHz) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Reverse Recovery Time R L = 100 (I F = I R = 10 mAdc, V R = 5.0 Vdc, I R(REC) = 1.0 mAdc) (Figure 1) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR) IR -- -- -- CD V F 70 -- Vdc Adc 60 2.5 100 1.5 pF mVdc -- -- -- -- -- t rr -- 715 855 1000 1250 6.0 ns G5-1/1 |
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