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 NEC's NPN SILICON TRANSISTOR NE894M03
FEATURES
* MINIATURE M03 PACKAGE: - Small transistor outline - Low profile / 0.59 mm package height - Flat lead style for better RF performance IDEAL FOR > 3 GHz OSCILLATORS LOW NOISE, HIGH GAIN LOW Cre UHSO 25 GHz PROCESS
1.4 0.1 0.45 (0.9) 0.45 1 0.20.1 2
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M03
1.20.05 0.80.1
* * * *
UE
0.30.1 3
DESCRIPTION
NEC's NE894M03 transistor is designed for oscillator applications above 3 GHz. The NE894M03 features low voltage, low current operation, low noise, and high gain. NEC's low profile/flat lead style "M03" package is ideal for today's portable wireless applications.
0.590.05 +0.1 0.15 -0.05
PIN CONNECTIONS 1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT |S21E|2 |NF Cre ICBO IEBO hFE PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 1 V, IC = 20 mA, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC = 20 mA, f = 2 GHz Noise Figure at VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT Reverse Transfer Capacitance3 at VCB = 0.5 V, IE = 0 mA, f = 1 MHz Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain2 at VCE = 1 V, IC = 5 mA UNITS GHz dB dB pF nA nA MIN 17 10 - - - - 50 NE894M03 2SC5786 M03 TYP 20 12 1.4 0.22 - - - MAX - - 2.5 0.30 100 100 100
Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Collector to base capacitance when the emitter is grounded
California Eastern Laboratories
NE894M03 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS VCBO VCEO VEBO IC PT
2
PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
UNITS V V V mA mW C C
RATINGS 9.0 3.0 1.5 35 105 150 -65 to +150
TJ TSTG
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With device mounted on 1.08 cm2 X 1.0 mm (t) glass epoxy board.
TYPICAL PERFORMANCE CURVES (TA = 25C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation, Ptot (mW)
Mounted on Glass epoxy PCB (1.08 cm2 x 1.0 mm (t) ) 125
105
REVERSE TRANSFR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance, Cre (pF)
0.5 f = 1 MHz
150
0.4
100
0.3
75
0.2
50
25
0.1
0 0 25 50 75 100 125 150
0
2
3
4
5
10
Ambient Temperature, TA (C)
Collector to Base Voltage, VCB (V)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
100 VCE = 1 V 40
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
500 A 450 A 400 A 350 A 30 300 A 250 A 20 200 A 150 A 10 100 A
Collector Current, IC (mA)
1
0.1
0.01
0.001 IB = 50 A 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 1 2 3 4 5
Collector Current, IC (mA)
10
Base to Emitter Voltage, VBE (V)
Collector to Emitter Voltage, VCE (V)
NE894M03 TYPICAL PERFORMANCE CURVES (TA = 25C)
DC CURRENT GAIN vs. COLLECTOR CURRENT
1000 VCE = 1 V 1000 VCE = 2 V
DC CURRENT GAIN vs. COLLECTOR CURRENT
DC Current Gain, hFE
100
DC Current Gain, hFE
100
100
10 0.1 1 10
10 0.1 1 10 100
Collector Current, IC (mA)
Collector Current, IC (mA)
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
24
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
40 VCE = 1 V Ic = 20 mA 35 30 MSG 25 20 15 10 5 0 |S21e|2 MAG
20
16
12
8
4
0
1
10
100
Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB)
Gain Bandwidth Product, fT (GHz)
VCE = 1 V f = 2 GHz
0.1
1
10
Collector Current, IC (mA)
Frequency, f (GHz)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
20 20
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB)
VCE = 2 V f = 2 GHz 16 MSG MAG
Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB)
VCE = 1 V f = 2 GHz 16 MSG
MAG
12 |S21e|2 8
12 |S21e|2 8
4
4
0 1 10 100
0 1 10 100
Collector Current, IC (mA)
Collector Current, IC (mA)
NE894M03 TYPICAL PERFORMANCE CURVES (TA = 25C)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
20 20
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB)
VCE = 2 V f = 4 GHz 16
Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB)
VCE = 1 V f = 4 GHz 16
12 MSG 8
12 MSG 8 |S21e|2 4
|S21e|2 4
0 1 10 100
0 1 10 100
Collector Current, IC (mA)
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
5 20 5
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB)
Ga 20
Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB)
Ga
4
16
4
16
3
12
3
12
2
8
2
8
1
NF VCE = 1 V f = 1 GHz
4
1
NF VCE = 2 V f = 1 GHz
4
0 1 10
0 100
0 1 10 100
0
Collector Current, IC (mA)
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
5 20
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
5 20
Associated Gain, Ga (dB)
4
16 Ga
Ga 3 12
3
12
2
8
2
8
1
NF VCE = 1 V f = 2 GHz
NF 1 VCE = 2 V f = 2 GHz 4
4
0 1 10 100
0
0 1 10 100
0
Collector Current, IC (mA)
Collector Current, IC (mA)
Associated Gain, Ga (dB)
4
16
Noise Figure, NF (dB)
Noise Figure, NF (dB)
NE894M03 TYPICAL SCATTERING PARAMETERS (TA = 25C)
j50 j25 j100
+135 S21
+90 +45
j10
S11
S12
0
10
25
50
100
0
+180
2
4
6
8
1
0
2 S2
-j10
-j25 -j50 0.100 to 8.000 GHz by 0.100
-j100
-135
-45
-90 0.100 to 8.000 GHz by 0.100
NE894M03 VC = 1 V, IC = 5 mA
FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.700 1.000 1.200 1.400 1.500 1.600 1.800 2.000 2.200 2.400 2.500 2.600 2.800 3.000 3.500 4.000 4.500 5.000 5.500 6.000 6.500 7.000 7.500 8.000 MAG 0.804 0.768 0.723 0.674 0.579 0.495 0.417 0.385 0.359 0.348 0.338 0.324 0.311 0.298 0.289 0.285 0.280 0.272 0.264 0.248 0.237 0.236 0.245 0.265 0.292 0.331 0.370 0.410 0.445 S11 ANG -12.45 -25.33 -37.26 -48.21 -67.93 -85.34 -105.27 -115.35 -123.36 -127.10 -130.59 -136.60 -142.01 -146.87 -151.34 -153.78 -155.92 -160.53 -164.58 -176.37 171.24 158.75 146.36 135.56 125.06 117.84 111.88 106.49 101.39 MAG 13.456 12.847 12.100 11.246 10.822 8.897 6.919 5.983 5.258 4.958 4.689 4.235 3.870 3.553 3.294 3.179 3.075 2.886 2.717 2.389 2.143 1.951 1.798 1.671 1.567 1.473 1.387 1.310 1.239 S21 ANG 168.86 157.43 147.50 139.00 127.56 115.63 103.15 96.67 91.25 88.73 86.43 82.15 78.13 74.49 71.02 69.33 67.68 64.51 61.50 54.30 47.62 41.26 35.18 29.34 23.87 18.43 13.28 8.53 4.23 MAG 0.014 0.026 0.037 0.045 0.054 0.064 0.075 0.082 0.088 0.092 0.095 0.103 0.110 0.119 0.128 0.133 0.138 0.148 0.159 0.190 0.224 0.261 0.302 0.345 0.390 0.435 0.479 0.521 0.560 S12 ANG 75.71 76.38 69.94 66.46 58.84 55.63 55.15 55.97 57.40 58.17 58.97 60.93 62.36 64.05 65.48 66.11 66.51 67.63 68.38 69.51 69.45 68.42 66.31 63.55 60.16 56.05 51.57 46.77 42.01 MAG 0.967 0.923 0.870 0.812 0.696 0.584 0.493 0.446 0.417 0.406 0.396 0.386 0.377 0.374 0.372 0.373 0.374 0.377 0.383 0.400 0.420 0.440 0.459 0.477 0.492 0.503 0.512 0.520 0.523 S22 ANG -9.33 -17.46 -24.63 -30.66 -40.80 -48.45 -54.53 -57.88 -60.15 -61.38 -62.38 -64.26 -65.92 -67.94 -69.91 -70.77 -71.57 -73.52 -75.40 -79.74 -84.41 -90.05 -96.90 -104.52 -112.99 -122.86 -132.99 -143.02 -153.03 K 0.205 0.177 0.250 0.301 0.414 0.555 0.708 0.800 0.876 0.906 0.934 0.973 1.006 1.029 1.038 1.042 1.040 1.043 1.035 1.004 0.965 0.924 0.886 0.852 0.829 0.809 0.798 0.793 0.799 MAG1 (dB) 29.83 26.94 25.19 23.96 23.00 21.42 19.64 18.65 17.76 17.32 16.92 16.15 14.96 13.72 12.90 12.53 12.25 11.64 11.17 10.64 9.82 8.74 7.75 6.85 6.04 5.30 4.62 4.00 3.45
Note: 1. Gain Calculations:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE894M03 TYPICAL SCATTERING PARAMETERS (TA = 25C)
j50 j25 j100
+135 S21
+90 +45
j10
S11
S12
0
10
25 2 S2
50
100
0
+180
2
4
6
8
1
0
-j10
-j25 -j50 0.100 to 8.000 GHz by 0.100
-j100
-135
-45
-90 0.100 to 8.000 GHz by 0.100
NE894M03 VC = 1 V, IC = 20 mA
FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.700 1.000 1.200 1.400 1.500 1.600 1.800 2.000 2.200 2.400 2.500 2.600 2.800 3.000 3.500 4.000 4.500 5.000 5.500 6.000 6.500 7.000 7.500 8.000 MAG 0.471 0.411 0.354 0.310 0.280 0.253 0.238 0.232 0.224 0.221 0.218 0.213 0.208 0.199 0.193 0.191 0.187 0.181 0.174 0.162 0.154 0.155 0.165 0.184 0.209 0.244 0.280 0.318 0.354 S11 ANG -25.95 -47.55 -65.00 -78.61 -111.18 -128.95 -145.67 -152.85 -158.68 -161.38 -163.90 -167.93 -171.63 -175.63 -178.78 179.04 177.38 173.28 169.63 158.76 146.71 135.13 124.55 117.01 109.56 106.64 104.53 102.21 99.38 MAG 30.346 26.025 21.817 18.373 15.790 11.932 8.694 7.352 6.372 5.977 5.625 5.047 4.583 4.194 3.877 3.738 3.609 3.378 3.178 2.783 2.490 2.265 2.089 1.949 1.834 1.734 1.647 1.570 1.498 S21 ANG 158.67 141.49 129.12 120.17 111.09 102.02 93.09 88.51 84.58 82.73 81.05 77.78 74.70 71.82 69.04 67.69 66.38 63.76 61.26 55.23 49.51 44.01 38.67 33.51 28.53 23.50 18.60 13.90 9.48 MAG 0.012 0.020 0.028 0.034 0.041 0.051 0.069 0.081 0.093 0.099 0.105 0.117 0.129 0.142 0.154 0.160 0.167 0.180 0.192 0.225 0.258 0.291 0.324 0.358 0.393 0.428 0.462 0.495 0.526 S12 ANG 79.29 75.44 71.06 70.81 67.98 69.48 71.17 71.83 72.24 72.22 72.26 72.11 71.97 71.32 70.68 70.44 70.18 69.53 68.63 66.58 64.25 61.57 58.73 55.74 52.51 49.06 45.43 41.62 37.89 MAG 0.872 0.757 0.649 0.563 0.428 0.334 0.274 0.246 0.230 0.225 0.222 0.219 0.218 0.221 0.224 0.226 0.230 0.235 0.244 0.267 0.289 0.311 0.330 0.346 0.359 0.369 0.376 0.384 0.389 S22 ANG -17.25 -30.53 -39.26 -45.08 -58.02 -63.82 -65.91 -68.43 -69.29 -70.06 -70.43 -71.10 -71.66 -73.00 -74.14 -74.60 -75.18 -76.50 -77.71 -81.03 -84.82 -89.72 -96.17 -103.31 -111.43 -121.23 -131.20 -141.17 -150.59 0.360 0.470 0.591 0.684 0.790 0.900 0.965 0.993 1.010 1.015 1.020 1.023 1.026 1.028 1.028 1.027 1.024 1.021 1.018 1.005 0.990 0.975 0.959 0.942 0.929 0.914 0.902 0.891 0.885 K MAG1 (dB) 34.13 31.13 28.95 27.33 25.90 23.66 21.00 19.59 17.76 17.06 16.42 15.41 14.50 13.68 12.99 12.68 12.40 11.85 11.36 10.51 9.85 8.92 8.09 7.35 6.69 6.08 5.52 5.01 4.54
Note: 1. Gain Calculations:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE894M03 TYPICAL SCATTERING PARAMETERS (TA = 25C)
j50 j25 j100
+135 S21
+90 +45
j10
S11
S12
0
10
25
50
100
0
+180
2
4
6
8
1
0
S2
2
-j10
-135
-45
-j25 -j50
0.100 to 8.000 GHz by 0.100
-j100
-90
0.100 to 8.000 GHz by 0.100
NE894M03 VC = 2 V, IC = 10 mA
FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.700 1.000 1.200 1.400 1.500 1.600 1.800 2.000 2.200 2.400 2.500 2.600 2.800 3.000 3.500 4.000 4.500 5.000 5.500 6.000 6.500 7.000 7.500 8.000 MAG 0.676 0.625 0.564 0.503 0.411 0.340 0.282 0.260 0.240 0.232 0.225 0.215 0.205 0.193 0.185 0.181 0.177 0.169 0.160 0.144 0.130 0.126 0.133 0.151 0.176 0.216 0.258 0.302 0.344 S11 ANG -15.93 -31.00 -43.98 -55.03 -77.55 -94.08 -112.43 -121.15 -128.06 -131.34 -134.30 -139.26 -143.73 -147.60 -151.09 -153.43 -155.06 -159.20 -162.54 -173.30 173.99 160.13 146.05 134.79 123.99 118.84 115.06 111.27 107.28 MAG 21.954 20.217 18.188 16.169 14.778 11.612 8.695 7.418 6.463 6.073 5.726 5.147 4.682 4.287 3.965 3.824 3.693 3.458 3.251 2.847 2.547 2.316 2.136 1.992 1.875 1.774 1.685 1.603 1.528 S21 ANG 164.82 151.06 139.76 130.65 120.09 109.37 98.72 93.31 88.76 86.65 84.73 81.08 77.65 74.50 71.49 70.02 68.61 65.81 63.14 56.77 50.75 44.99 39.39 33.98 28.75 23.41 18.19 13.14 8.36 MAG 0.012 0.020 0.028 0.035 0.041 0.050 0.064 0.073 0.081 0.087 0.091 0.101 0.111 0.121 0.132 0.137 0.143 0.154 0.166 0.195 0.227 0.261 0.297 0.334 0.373 0.414 0.456 0.497 0.535 S12 ANG 76.68 74.50 71.35 67.71 64.03 63.98 66.11 67.44 68.71 69.06 69.76 70.63 71.10 71.60 71.91 71.98 72.07 72.04 71.89 71.18 69.98 68.18 65.94 63.32 60.42 56.87 52.96 48.76 44.54 MAG 0.940 0.872 0.794 0.721 0.589 0.481 0.407 0.370 0.349 0.342 0.336 0.331 0.327 0.329 0.331 0.332 0.335 0.340 0.348 0.369 0.391 0.414 0.434 0.451 0.465 0.476 0.484 0.491 0.494 S22 ANG -11.43 -21.02 -28.45 -34.01 -43.87 -49.19 -51.87 -53.78 -54.74 -55.53 -55.99 -57.14 -58.09 -59.84 -61.37 -62.06 -62.79 -64.51 -66.18 -70.18 -74.60 -79.87 -86.36 -93.48 -101.40 -110.72 -120.36 -130.15 -139.81 K 0.263 0.312 0.397 0.492 0.609 0.756 0.873 0.929 0.970 0.982 0.995 1.006 1.017 1.022 1.023 1.022 1.020 1.015 1.008 0.986 0.961 0.934 0.906 0.880 0.860 0.838 0.820 0.808 0.803 MAG1 (dB) 32.68 29.96 28.13 26.66 25.55 23.64 21.36 20.10 18.99 18.46 17.98 16.59 15.46 14.56 13.86 13.55 13.26 12.76 12.36 11.63 10.49 9.49 8.57 7.76 7.01 6.32 5.68 5.09 4.55
Note: 1. Gain Calculations:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE894M03 NONLINEAR MODEL SCHEMATIC
CCBPKG
0.35 pF
CCB
0.12 pF
LCPKG
0.60 nH
LBPKG
0.55 nH
LB
0.01 nH
Collector Q1 CCE
0.18 pF
Base
LE
0.01 nH
CCEPKG
0.07 pF
LEPKG
0.95 nH
CBEPKG
0.005 pF
Emitter
BJT NONLINEAR MODEL PARAMETERS(1)
Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 100e-18 121.3 1.00 25 293e-3 50e-15 2.111 30 1.0 2.105 457e-3 1.155e-15 1.288 1.5 3.0 1.0 759e-6 4.0 0.6e-12 1.049 0.226 83e-15 0.89 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF* AF* Q1 0.76 0.5 0 0.75 0 0.5 6.5e-12 0.1 10 0.5 20 0 1.11 0 3 0 1
ADDITIONAL PARAMETERS
Parameters CCB CCE LB LE CCBPKG CBEPKG CCEPKG LBPKG LCPKG LEPKG NE894M03 0.12 pF 0.18 pF 0.01 nH 0.01 nH 0.35 pF 0.005 pF 0.07 pF 0.55 nH 0.60 nH 0.95 nH
AF and KF are 1/f noise parameters and are bias dependent. The appropriate values for the 1/f noise parameters (AF and KF) shall be chosen from the table below, according to the desired current range. IC = 5 mA AF KF 1.352 71.23e-15 IC = 10 mA 2.17 231.3e-12 IC = 15 mA 2.19 268.9e-12
For a better understanding on AF and KF parameters, please refer to AN1026. MODEL TEST CONDITIONS Frequency: 0.1 to 6 GHz Bias: VCE = 1.5 V, IC = 1 mA to 9 mA Date: 09/2003
(1) Gummel-Poon Model
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
09/02/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
3-97


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