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| HMC593LP3 / 593LP3E v00.0407 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz 5 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC593LP3 / HMC593LP3E is ideal for: * Wireless Infrastructure * Fixed Wireless * WiMAX WiBro / 4G * Tower Mounted Amplifiers Features Noise Figure: 1.2 dB Output IP3: +29 dBm Gain: 19 dB Low Loss LNA Bypass Path Single Supply: +5.0V @ 40mA 50 Ohm Matched Output Functional Diagram General Description The HMC593LP3 / HMC593LP3E are versatile, high dynamic range GaAs MMIC Low Noise Amplifiers that integrate a low loss LNA bypass mode on the IC. The amplifier is ideal for WiBro & WiMAX receivers operating between 3.3 and 3.8 GHz and provides 1.2 dB noise figure, 19 dB of gain and +29 dBm IP3 from a single supply of +5.0V @ 40mA. Input and output return losses are 23 and 13 dB respectively with no external matching components required. A single control line (0/+3V) is used to switch between LNA mode and a low 2.0 dB loss bypass mode reducing the current consumption to 10 A. Electrical Specifications, TA = +25 C, Vdd = +5V LNA Mode Parameter Min. Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Reverse Isolation Power for 1dB Compression (P1dB)* Saturated Output Power (Psat) Third Order Intercept (IP3)* (-20 dBm Input Power per tone, 1 MHz tone spacing) Supply Current (Idd) LNA Mode to Bypass Mode Swtiching Speed Bypass Mode to LNA Mode 250 s * P1dB and IP3 for LNA Mode are referenced to RFOUT while P1dB for Bypass Mode is referenced to RFIN. 13 16 Typ. 3.3 - 3.8 19 0.011 1.2 23 13 19 16 17 29 40 50 0.01 <4 30 1.6 30 25 -3.0 Max. Min. Typ. 3.3 - 3.8 -2.0 0.002 Max. GHz dB dB / C dB dB dB dB dBm dBm dBm mA ns Bypass Mode Units 5 - 176 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC593LP3 / 593LP3E v00.0407 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz LNA - Gain, Noise Figure & Power vs. Supply Voltage @ 3.5 GHz 20 19 GAIN (dB), P1dB (dBm) 18 17 16 15 14 2.5 3.0 3.5 4.0 4.5 5.0 4.5 5 Vdd (V) FREQUENCY (GHz) Gain P1dB LNA Broadband Gain & Return Loss 30 20 RESPONSE (dB) 10 0 -10 -20 -30 -40 2.0 5 3 2.5 NOISE FIGURE (dB) 2 1.5 1 0.5 0 5.5 S21 S11 S22 Noise Figure LNA Gain vs. Temperature 22 21 20 19 GAIN (dB) 18 17 16 15 14 13 12 3.3 3.4 3.5 3.6 3.7 3.8 +25C +85C -40C LNA Noise Figure vs. Temperature 2.5 2.3 2.1 NOISE FIGURE (dB) 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 3.3 3.4 3.5 3.6 3.7 3.8 +25C +85C -40C FREQUENCY (GHz) FREQUENCY (GHz) LNA Gain vs. Vdd 22 21 20 19 GAIN (dB) 18 17 16 15 14 13 12 3.3 3.4 3.5 3.6 3.7 3.8 4.5V 5.0V 5.5V LNA Noise Figure vs. Vdd 2.5 2.3 2.1 NOISE FIGURE (dB) 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 3.3 3.4 3.5 3.6 3.7 3.8 4.5V 5.0V 5.5V FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 177 LOW NOISE AMPLIFIERS - SMT HMC593LP3 / 593LP3E v00.0407 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz 5 LOW NOISE AMPLIFIERS - SMT LNA Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40 3.3 +25C +85C -40C LNA Output Return Loss vs. Temperature 0 +25C +85C -40C -5 RETURN LOSS (dB) -10 -15 -20 3.4 3.5 3.6 3.7 3.8 -25 3.3 3.4 3.5 3.6 3.7 3.8 FREQUENCY (GHz) FREQUENCY (GHz) LNA Output IP3 vs. Temperature 35 34 33 32 IP3 (dBm) 31 30 29 28 27 26 25 3.3 3.4 3.5 3.6 3.7 3.8 +25C +85C -40C LNA Output IP3 vs. Vdd 35 34 33 32 IP3 (dBm) 31 30 29 28 27 26 25 3.3 3.4 3.5 3.6 3.7 3.8 4.5V 5.0V 5.5V FREQUENCY (GHz) FREQUENCY (GHz) LNA Psat vs. Temperature 22 21 20 19 Psat (dBm) 18 17 16 15 14 13 12 3.3 3.4 3.5 3.6 3.7 3.8 +25C +85C -40C LNA Output P1dB vs. Temperature 22 21 20 19 P1dB (dBm) 18 17 16 15 14 13 12 3.3 3.4 3.5 3.6 3.7 3.8 +25C +85C -40C FREQUENCY (GHz) FREQUENCY (GHz) 5 - 178 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC593LP3 / 593LP3E v00.0407 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz LNA Output P1dB vs. Vdd 22 21 20 OUTPUT P1dB (dBm) 19 18 17 16 15 14 13 12 3.3 3.4 3.5 3.6 3.7 3.8 4.5V 5.0V 5.5V LNA Reverse Isolation vs. Temperature 0 5 LOW NOISE AMPLIFIERS - SMT 5 - 179 -10 ISOLATION (dB) +25C +85C -40C -20 -30 -40 -50 3.3 3.4 3.5 3.6 3.7 3.8 FREQUENCY (GHz) FREQUENCY (GHz) Bypass Mode Broadband Insertion Loss & Return Loss 0 Bypass Mode Insertion Loss vs. Temperature 0 -0.5 INSERTION LOSS (dB) -5 RESPONSE (dB) S21 S11 S22 -1 -1.5 -2 -2.5 -3 -3.5 -4 -4.5 +25C +85C -40C -10 -15 -20 -25 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -5 3.3 3.4 3.5 3.6 3.7 3.8 FREQUENCY (GHz) FREQUENCY (GHz) Bypass Mode Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 3.3 Bypass Mode Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) +25C +85C -40C -10 -15 -20 -25 -30 3.3 +25C +85C -40C 3.4 3.5 3.6 3.7 3.8 3.4 3.5 3.6 3.7 3.8 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC593LP3 / 593LP3E v00.0407 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz 5 LOW NOISE AMPLIFIERS - SMT Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFin)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 C) (derate 13 mW/C above 85 C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +8.0 Vdc LNA Mode +15 dBm Bypass Mode +30 dBm 150 C 850 mW 76.9 C/W -65 to +150 C -40 to +85 C Typical Supply Current vs. Vdd Vdd (Vdc) +4.5 +5.0 +5.5 Idd (mA) 33 39 44 Truth Table LNA Mode Bypass Mode Vctl= Vdd Vctl= 0V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC593LP3 HMC593LP3E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] 593 XXXX 593 XXXX [2] [1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 260 C [3] 4-Digit lot number XXXX 5 - 180 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC593LP3 / 593LP3E v00.0407 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz Pin Descriptions Pin Number 1, 2, 5, 6, 8, 9, 11 - 13 3 Function N/C Description No connection necessary. These pins may be connected to RF/DC ground. This pin is AC coupled and matched to 50 Ohms. Interface Schematic 5 LOW NOISE AMPLIFIERS - SMT 5 - 181 RFIN 4, 7, 15 GND These pins must be connected to RF/DC ground. 10 RFOUT This pin is AC coupled and matched to 50 Ohms. 14 Vdd Power supply voltage. Bypass capacitors are required. See application circuit. 16 Vctl LNA/Bypass Mode Control Voltage. See truth table. Application Circuit Component C1, C2 C3 Value 100pF 10KpF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC593LP3 / 593LP3E v00.0407 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz 5 LOW NOISE AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 117160 [1] Item J1 - J2 J3 - J6 C1, C2 C3 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 100 pF Capacitor, 0402 Pkg. 10 KpF Capacitor, 0402 Pkg. HMC593LP3 / HMC593LP3E Amplifier 117158 Evaluation Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. 5 - 182 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC593LP3 / 593LP3E v00.0407 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz Notes: 5 LOW NOISE AMPLIFIERS - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 183 |
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