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| WTC2305 P-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT -4.2 AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE Features: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <53m @V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOURCE 2 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Powered System ( Maximum Ratings(TA=25 Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(T A ,(T A Pulsed Drain Current 1,2 Unless Otherwise Specified) Symbol VDS VGS ID I DM PD R JA TJ , Tstg Value -20 12 -4.2 -3.4 -10 1.38 90 -55~+150 Unit V A Total Power Dissipation(T A=25C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature Range W C/W C Device Marking WTC2305=2305 http:www.weitron.com.tw WEITRON 1/6 16-May-05 WTC2305 Electrical Characteristics (TA = 25 Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0,I D =-250A Gate-Source Threshold Voltage VDS =VGS ,I D =-250 A Gate-Source Leakage C urrent VGS = 12V Drain- Source Leakage Current(Tj=25C) VDS =-20V,V GS =0 Drain- Source Leakage Current(Tj=70C) VDS =-16V,V GS =0 Drain-Source On-Resistance 2 VGS=-10V,ID=-4.5A VGS=-4.5V,ID=-4.2A VGS=-2.5V,ID=-2.0A VGS=-1.8V,ID=-1.0A Forward Transconductance VDS =-5.0V, ID =-2.8A R DS(o n) 9 53 65 100 250 m I DSS -10 V(BR)DSS VGS(Th) I GSS -20 -0.5 V 100 -1 A nA g fs S Dynamic Input Capacitance VGS =0V,VDS =-15V,f=1.0MHz Output Capacitance VGS =0V,VDS =-15V,f=1.0MHz Reverse Transfer Capacitance VGS =0V,VDS =-15V,f=1.0MHz C iss C oss C rss 740 167 126 pF http:www.weitron.com.tw WEITRON 2/6 16-May-05 WTC2305 Switching Turn-on Delay Time 2 VDS=-15V,VGS=-10V,ID=-4.2A,RD=3.6,RG=6 Rise Time VDS=-15V,VGS=-10V,ID=-4.2A,RD=3.6,RG=6 Turn-off De lay Time VDS=-15V,VGS=-10V,ID=-4.2A,RD=3.6,RG=6 Fall Time VDS=-15V,VGS=-10V,ID=-4.2A,RD=3.6,RG=6 Total Gate Charge 2 VDS=-16V,VGS=-4.5V,ID=-4.2A Gate-Source C harge VDS=-16V,VGS=-4.5V,ID=-4.2A Gate-Drain C hange VDS=-16V,VGS=-4.5V,ID=-4.2A t d (on) 5.9 3.6 32.4 2.6 10.6 2.32 3.68 ns t d (off) nC tr tf Qg Q gs Q gd Source-Drain Diode Characteristics Forward On Voltage 2 VGS =0V,IS=-1.2A ,@Tj=25 C VSD - 27.7 22 - 1.2 - V ns nC Reverse Recovery Time VGS=0,IS=-4.2A,dl/dt=100A/s Reverse Recovery Charge VGS=0,IS=-4.2A,dl/dt=100A/s T rr Q rr Note: 1. Pulse width limited by Max, junction temperature. 2. pulse width300s, duty cycle2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270/W when mounted on min, copper pad. http:www.weitron.com.tw WEITRON 3/6 16-May-05 WTC2305 40 36 TA=25C = -5V = -4V 32 TA=150C = -5V = -4V -I D ,DRAIN CURRENT (A) -I D ,Drain Current (A) 30 28 24 20 16 12 8 4 VG = -2V = -3V 20 = -3V 10 V = -2V G 0 0 2 4 6 8 10 0 0 FIG.1 Typical Output Characteristics 160 1.8 -V DS ,DRAIN-TO-SOURCE VOLTAGE(V) Fig.2 Typical Output Characteristics -VDS ,Drain-to-source Voltage(V) 2 4 6 8 I D = -4.2A TA = 25C Normalized RDs(on) 120 1.6 1.4 1.2 1.0 0.8 I D = -4.2A VGS = -4.5V RDS(ON) (m) 80 40 0 1 Fig.3 On-Resistance v.s. Gate Voltage 100 -VGS ,Gate-to-source Voltage(V) 2 3 4 5 6 0.6 -50 0 50 100 150 Fig.4 Normalized On-Resistance 1.5 Tj ,Junction Temperature(C) 10 Tj = 150C 1 1 -IS ( A ) -VGS(th)(V) 1.6 Tj = 25C 0.1 0.5 0.01 0 Fig.5 Forward Characteristics of Reverse Diode -VDS ,Source-to-Drain Voltage(V) 0.4 0.8 1.2 0 -50 Fig.6 Gate Threshold Voltage v.s. Junction Temperature Tj ,Junction Temperature(C) 0 50 100 150 WEITRON http://www.weitron.com.tw 4/6 16-May-05 WTC2305 12 10000 -VGS , Gate to Source Voltage(V) 10 ID = -4.2A VDS = -16V 1000 f = 1.0MHz 8 Ciss C(pF) 6 4 100 Coss Crss 2 0 0 5 10 15 20 25 10 1 5 9 13 17 21 25 29 Fig 7. Gate Charge Characteristics 100 Q G , Total Gate Charge(nC) -VDS, Drain-to-Source Voltage(V) Fig 8. Typical Capacitance Characteristics 1 Duty factor = 0.5 0.2 0.1 0.1 0.05 0.01 0.01 10 -I D(A) 1ms 1 Normalized Thermal Response(R j a ) 10ms 0.1 PDM t T TA = 25C Single Pulse 0.01 0.1 1 10 100ms Is DC 100 Single pulse Duty factor = t / T Peak Tj=PDM x R ja + Ta R ja=270C / W 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Fig 9. Maximum Safe Operation Area RD -VDS , Drain-to-Source Voltage(V) t, Pulse Width(s) Fig 10. Effective Transient Thermal Impedance D RG -10V G VDS TO THE OSCILLOSCOPE D G VDS TO THE OSCILLOSCOPE 0.75x RATED VDS 0.8x RATED VDS S S VGS -1~3mA VGS IG ID Fig 11. Switching Time Circuit Fig.12 Gate Charge Circuit WEITRON http://www.weitron.com.tw 5/6 16-May-05 WTC2305 SOT-23 Outline Dimension SOT-23 A TOP VIEW D E G H B C K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 6/6 16-May-05 |
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