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| WTC2303 P-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT -1.9 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE Features: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <240m@V GS =-10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOURCE 2 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Powered System ( Maximum Ratings(TA=25 Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Unless Otherwise Specified) Symbol VDS VGS Value -30 20 -1.9 -1.5 -10 1.38 90 -55~+150 Unit V ,(T A ,(T A ID I DM PD R JA TJ , Tstg A Pulsed Drain Current 1,2 Total Power Dissipation(T A=25C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature Range W C/W C Device Marking WTC2303=2303 http:www.weitron.com.tw WEITRON 1/6 16-May-05 WTC2303 Electrical Characteristics (TA = 25 Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0,I D =-250A Gate-Source Threshold Voltage VDS =VGS ,I D =-250 A Gate-Source Leakage Current VGS = 20V Drain- Sou rce Leakage Current(Tj=25C) VDS =-30V,V GS =0 Drain- Sou rce Leakage Current(Tj=70C) VDS =-30V,V GS =0 Drain-Source On-Resistance 2 VGS =-10V,I D=-1.7A VGS =-4.5V,I D=-1.3A Forward Transconductance VDS =-10V, ID =-1.7A g fs R DS(o n) 2 240 460 m I DSS -10 V(BR)DSS VGS(Th) I GSS -30 -1.0 V 100 -1 A nA S Dynamic Input Capacitance VGS =0V,VDS =-15V,f=1.0MHz Output Capacitance VGS =0V,VDS =-15V,f=1.0MHz Reverse Transfer Capacitance VGS =0V,VDS =-15V,f=1.0MHz C iss C oss C rss 230 130.4 40 pF http:www.weitron.com.tw WEITRON 2/6 16-May-05 WTC2303 Switching Turn-on Delay Time 2 VDS=-15V,VGS=-10V,I D=-1A,R D=15 ,R G=6 Rise Time VDS=-15V,VGS=-10V,I D=-1A,R D=15 ,R G=6 Turn-off De lay Time VDS=-15V,V GS =-10V,I D=-1A,R D=15 ,R G=6 Fall Time VDS=-15V,VGS=-10V,I D=-1A,R D=15 ,R G=6 Total Gate Charge 2 VDS=-15V,VGS=-10V,ID=-1.7A Gate-Source C harge VDS=-15V,VGS=-10V,ID=-1.7A Gate-Drain C hange VDS=-15V,VGS=-10V,ID=-1.7A t d (on) 7.6 8.2 17.5 9 6.2 1.4 0.3 ns t d (off) 10 nC tr tf Qg Q gs Q gd Source-Drain Diode Characteristics Forward On Voltage 2 VGS =0V,IS=-1.25A @Tj=25 C VSD - - - 1.2 -1 - 10 V A A Continuous Source Current(Body Diode) VD=VG =0V,VS =-1.2V Pulsed Source Current(Body Diode) 1 IS I SM Note: 1. Pulse width limited by Max, junction temperature. 2. pulse width300s, duty cycle2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270/W when mounted on min, copper pad. http:www.weitron.com.tw WEITRON 3/6 16-May-05 WTC2303 10 8 6 4 2 0 VG = -4V TA=25C 10 = -10V = -8V = -6V = -5V 8 6 4 2 0 TA=125C -I D ,DRAIN CURRENT (A) -I D ,Drain Current (A) = -10V = -8V = -6V = -5V VG = -4V 0 -V DS 1 2 3 4 ,DRAIN-TO-SOURCE VOLTAGE(V) 5 0 FIG.1 Typical Output Characteristics 250 1.8 Fig.2 Typical Output Characteristics -VDS ,Drain-to-source Voltage(V) 1 2 3 4 5 ID = -1.3A TA = 25C Normalized RDs(on) 200 1.6 1.4 1.2 1.0 0.8 ID = -1.7A VG = -10V RDS(ON) (m) 150 100 3 Fig.3 On-Resistance v.s. Gate Voltage 10.0 3 -VGS ,Gate-to-source Voltage(V) 5 7 9 11 0.6 -50 0 50 100 150 Fig.4 Normalized On-Resistance Tj ,Junction Temperature(C) 1.0 Tj = 150C 2 -IF ( A ) 0 -VGS(th)(V) 1.3 Tj = 25C 1 0.1 0.1 0.3 Fig.5 Forward Characteristics of Reverse Diode -VDS ,Source-to-Drain Voltage(V) 0.5 0.7 0.9 1.1 0 -50 Fig.6 Gate Threshold Voltage v.s. Junction Temperature Tj ,Junction Temperature(C) 0 50 100 150 WEITRON http://www.weitron.com.tw 4/6 16-May-05 WTC2303 14 1000 -VGS , Gate to Source Voltage(V) 12 10 8 6 4 ID = -1.7A VDS = -15V f = 1.0MHz Ciss Coss C(pF) 100 Crss 2 0 10 0 2 4 6 8 1 5 Fig 7. Gate Charge Characteristics 100 Q G , Total Gate Charge(nC) -VDS, Drain-to-Source Voltage(V) 9 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Duty factor = 0.5 0.2 0.1 0.05 10 -I D(A) 1 1ms 10ms Normalized Thermal Response(R ja ) 0.1 PDM 0.01 t T 0.01 0.1 TA = 25C Single Pulse 0.01 0.1 1 10 100ms Is DC 100 Single pulse Duty factor = t / T Peak Tj=PDM x R ja + Ta R ja=270C / W 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Fig 9. Maximum Safe Operation Area VDS 90% -VDS , Drain-to-Source Voltage(V) t, Pulse Width(s) Fig 10. Effective Transient Thermal Impedance VG QG -10V QGS 10% QGD VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig.12 Gate Charge Waveform WEITRON http://www.weitron.com.tw 5/6 16-May-05 WTC2303 SOT-23 Outline Dimension SOT-23 A TOP VIEW D E G H B C K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 6/6 16-May-05 |
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