View MPSA92_1085626.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE PNP TRANSISTOR
DESCRIPTION
The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier.
FEATURES
* High Collector-Emitter voltage: VCEO=-300V(UTC MPSA92) VCEO=-200V(UTC MPSA93) *Collector Dissipation: Pc(max)=625mW
1
TO-92
1:EMITTER
2:BASE
3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
PARAMETER
Collector-Base Voltage UTC MPSA92 UTC MPSA93 Collector-Emitter Voltage UTC MPSA92 UTC MPSA93 Emitter-Base Voltage Collector Dissipation (Ta=25C) Derate Above 25 Collector Current Collector Dissipation (Tc=25C) Derate Above 25 Junction Temperature Storage Temperature VCBO -300 -200 V VCEO VEBO Pc Ic Pc Tj TSTG -300 -200 -5 625 5 -500 1.5 12 150 -55 ~ +150
SYMBOL
VALUE
UNIT
V
V mW mW/ mA W mW/ C C
ELECTRICAL CHARACTERISTICS(Tj=25C,unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage UTC MPSA92 UTC MPSA93 Collector-Emitter Breakdown Voltage UTC MPSA92 UTC MPSA93 Emitter-Base Breakdown Voltage Collector Cut-Off Current UTC MPSA92 UTC MPSA93
SYMBOL
BVCBO
TEST CONDITIONS
Ic=-100A, IE=0
MIN
-300 -200
TYP
MAX UNIT
V
BVCEO
Ic=-1mA, IB=0 -300 -200 -5 -0.25 -0.25 V V A
BVEBO ICBO
IE=-100A, Ic=0 VCB=-200V, IE=0 VCB=-160V, IE=0
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-019,A
UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR
PARAMETER
Emitter Cut-Off Current DC Current Gain(note)
SYMBOL
IEBO hFE
TEST CONDITIONS
VEB=-3V, Ic=0 VCE=-10V, Ic=-1mA VCE=-10V, Ic=-10mA VCE=-10V, Ic=-30mA Ic=-20mA, IB=-2mA Ic=-20mA, IB=-2mA VCE=-20V, Ic=-10mA, f=100MHz VCB=-20V, IE=0 f=1MHz
MIN
60 80 80
TYP
MAX UNIT
-0.10 A
Collector-Emitter Saturation Voltage VCE(sat)1 Base-Emitter Saturation Voltage VBE(sat)1 Current Gain Bandwidth Product fT Collector Base Capacitance Ccb UTC MPSA92 UTC MPSA93 Note:Pulse test: PW<300s, Duty Cycle<2%, VCE(SAT)1<200mV(Class SIN)
-0.5 -0.90 50 6 8
V V MHz pF
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 DC Current Gain
3 10 4 -10
Fig.2 Saturation Voltage
2 10
Fig.3 Capacitance
Ic=10*IB VCE(sat),VBE(sat) (mV) VCE=-10V DC current Gain,H FE
2 10
VCE(sat)
VBE(sat)
CIB(pF),CCB(pF)
3 -10
CIB
1 10
1 10
2 -10
CCB
0 10
0 -10
1 -10
2 -10
3 -10
4 -10
1 -10 0 -10
1 -10
2 -10
3 -10
4 -10
-1 -10
0 -10
1 -10
2 -10
Collector current, Ic(mA)
Collector current, Ic(mA)
Collector-Base voltage(V)
Fig.4 Active-region safe operating area
3 -10
s 0.1m
Fig.5 Current Gain Bandwidth product
3 10
1 .0
D
Collector current, Ic(mA)
Current gain bandwidth product(MHz)
C al m C er 25 Th c= T 5W n 1. atio it lim
ms
2 -10
MPSA93
VCE=-20V f=100MHz
2 10
1 -10 625mW Thermal limitation Ta=25C bonding breakdown limitation Tj=150C 1 -10 0 -10 1 -10
MPSA92
2 -10
3 -10
1 10 0 -10
1 -10
2 -10
Collector-Emitter voltage ( v)
Collector current, Ic(mA)
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R201-019,A
UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
3
QW-R201-019,A

▲Up To Search▲

Price & Availability of MPSA92

	To Download MPSA92 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .